公开(公告)号：US20160084638A1

公开(公告)日：2016-03-24

申请号：US14923676

申请日：2015-10-27

申请人： BONDTECH CO., LTD.

发明人： Akira YAMAUCHI

IPC分类号： G01B11/14

CPC分类号： H01L24/75 ,  G01B11/14 ,  H01L23/544 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/757 ,  H01L2224/81009 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81204 ,  H01L2224/81801 ,  H01L2224/83121 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K1/0269 ,  H05K3/303 ,  H05K2201/09918 ,  H05K2203/166 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A pressure application technique is provided that enables two objects to be pressurized (e.g., objects to be bonded) to be positioned with greater accuracy before having pressure applied thereto. The objects to be pressurized are moved relative to each other in a Z direction such that the objects are brought into contact with each other (step S13). Then, a horizontal positional shift ΔD between the objects to be pressurized is measured in the contact state of the objects to be pressurized (step S14). Thereafter, positioning of the objects to be pressurized is again performed by moving the objects to be pressurized relative to each other in the horizontal direction, as a result of which the positional shift ΔD is corrected (step S17).

摘要翻译： 提供了一种压力施加技术，其能够在施加压力之前使两个物体被加压（例如，待粘合的物体）以更高的准确度定位。 要加压的物体在Z方向上彼此相对移动，使得物体彼此接触（步骤S13）。 然后，在待加压物体的接触状态下测量待加压物体之间的水平位置移动量Dgr; D（步骤S14）。 此后，通过在水平方向上相对于彼此移动要加压的物体来再次执行要加压的物体的定位，结果校正位置偏移＆Dgr; D（步骤S17）。

公开(公告)号：US09142532B2

公开(公告)日：2015-09-22

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  B23K31/02 ,  B23K37/00 ,  B23K37/04 ,  H01L21/66 ,  H01L25/10 ,  H01L23/10 ,  H01L21/683

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。

公开(公告)号：US12094747B2

公开(公告)日：2024-09-17

申请号：US17261022

申请日：2019-07-02

申请人： BONDTECH CO., LTD.

发明人： Akira Yamauchi

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01L21/68 ,  H01L23/544

CPC分类号： H01L21/6833 ,  H01L21/681 ,  H01L21/67092 ,  H01L23/544 ,  H01L2223/54426

摘要： This substrate bonding device (100) includes: a stage (401), a head (402), an electrostatic chuck that holds a peripheral portion of a substrate (301) while the stage (401) supports the substrate (301), a holder driver that drives the electrostatic chuck, and a controller (700). The electrostatic chuck is disposed in a first area on the stage (401) facing the peripheral portion of the substrate (301), and the holder driver drives the electrostatic chuck by applying voltage to the electrostatic chuck. The controller (700) controls the holder driver in such a manner that a peripheral portion of the substrate (301) is released from the electrostatic chuck when a peripheral portion of the substrate (301) is made to come into contact with a peripheral portion of the substrate (302) while a central portion of a bonding surface of the substrate (301) and a central portion of a bonding surface of the substrate (302) are in contact with each other.

公开(公告)号：US20240162063A1

公开(公告)日：2024-05-16

申请号：US18552650

申请日：2022-03-30

申请人： BONDTECH CO., LTD.

发明人： Akira YAMAUCHI

IPC分类号： H01L21/67 ,  H01L21/18 ,  H01L21/687

CPC分类号： H01L21/67092 ,  H01L21/187 ,  H01L21/67259 ,  H01L21/68764

摘要： A bonding device (1) includes a stage (141) to hold a substrate (W1), a head (142) arranged facing the stage (141) and configured to hold a substrate (W2), a head holder (111) to hold the head (142) on the opposite side to the stage (141) side of the head (142), the head holder (111) extending to the outer side of the head (142) and the stage (141) in a direction orthogonal to the Z-axis direction, three holder supports (1471) each to support the head holder (111) from one of three locations in an outer peripheral portion surrounding the stage (141), and three support drivers (146) to individually move the three holder supports (1471) in a −Z-direction in which the head holder (111) and the stage (141) come close to each other or a +Z-direction in which the head holder (111) and the stage (141) separate from each other.

公开(公告)号：US09870922B2

公开(公告)日：2018-01-16

申请号：US15306303

申请日：2015-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

公开(公告)号：US09379082B2

公开(公告)日：2016-06-28

申请号：US14923676

申请日：2015-10-27

申请人： BONDTECH CO., LTD.

发明人： Akira Yamauchi

IPC分类号： G01B11/14 ,  H01L23/00 ,  H05K3/30 ,  H01L23/544 ,  H05K1/02

CPC分类号： H01L24/75 ,  G01B11/14 ,  H01L23/544 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/757 ,  H01L2224/81009 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81204 ,  H01L2224/81801 ,  H01L2224/83121 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K1/0269 ,  H05K3/303 ,  H05K2201/09918 ,  H05K2203/166 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A pressure application technique is provided that enables two objects to be pressurized (e.g., objects to be bonded) to be positioned with greater accuracy before having pressure applied thereto. The objects to be pressurized are moved relative to each other in a Z direction such that the objects are brought into contact with each other (step S13). Then, a horizontal positional shift ΔD between the objects to be pressurized is measured in the contact state of the objects to be pressurized (step S14). Thereafter, positioning of the objects to be pressurized is again performed by moving the objects to be pressurized relative to each other in the horizontal direction, as a result of which the positional shift ΔD is corrected (step S17).

公开(公告)号：US20240079373A1

公开(公告)日：2024-03-07

申请号：US18487068

申请日：2023-10-14

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： H01L23/00

CPC分类号： H01L24/74 ,  H01L24/80 ,  H01L2224/8022

摘要： Bonding system for bonding a second article to a first article, comprising an activation treatment device that comprises an object supporter that supports objects comprising the second article, and a particle beam source that activates a bonding surface of the second article by irradiating the objects with a particle beam, the objects being set on one treatment surface without being opposed to each other, followed by performing activation treatment by the particle beam source; and a bond device that brings the second article, of which the bonding surface is activated by the activation treatment device, into contact with the first article, to thereby bond the second article to the first article, wherein the object supporter supports the objects in a posture in which a portion formed of a plurality of kinds of materials comprising the bonding surface of the second article in the objects is exposed to the particle beam source.

公开(公告)号：US11837444B2

公开(公告)日：2023-12-05

申请号：US16347590

申请日：2017-11-06

申请人： BONDTECH CO., LTD. ,  Tadatomo Suga

发明人： Akira Yamauchi ,  Tadatomo Suga

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32816 ,  H01J2237/201 ,  H01J2237/338 ,  H01J2237/3341

摘要： The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US20210320024A1

公开(公告)日：2021-10-14

申请号：US17261022

申请日：2019-07-02

申请人： BONDTECH CO., LTD.

发明人： Akira YAMAUCHI

IPC分类号： H01L21/683 ,  H01L21/68

摘要： This substrate bonding device (100) includes: a stage (401), a head (402), an electrostatic chuck that holds a peripheral portion of a substrate (301) while the stage (401) supports the substrate (301), a holder driver that drives the electrostatic chuck, and a controller (700). The electrostatic chuck is disposed in a first area on the stage (401) facing the peripheral portion of the substrate (301), and the holder driver drives the electrostatic chuck by applying voltage to the electrostatic chuck. The controller (700) controls the holder driver in such a manner that a peripheral portion of the substrate (301) is released from the electrostatic chuck when a peripheral portion of the substrate (301) is made to come into contact with a peripheral portion of the substrate (302) while a central portion of a bonding surface of the substrate (301) and a central portion of a bonding surface of the substrate (302) are in contact with each other.

公开(公告)号：US20210265300A1

公开(公告)日：2021-08-26

申请号：US17269513

申请日：2018-11-14

申请人： Tadatomo SUGA ,  BONDTECH CO., LTD.

发明人： Akira YAMAUCHI ,  Tadatomo SUGA

IPC分类号： H01L23/00

摘要： A chip bonding system including an activation treatment device including a frame holder and a particle beam source that irradiates a sheet, to which a chip held by the frame holder is stuck, with a particle beam, to thereby activate a bonding surface of the chip; and a bonding device that brings the chip, of which the bonding surface is activated by the activation treatment device, into contact with a substrate, to thereby bond the chip to the substrate. The frame holder supports a holding frame in a posture in which one side, to which the chip is stuck, in the sheet, of the holding frame that holds the sheet TE, which is formed of a resin, and to which the chip is stuck, is exposed to the particle beam source.