公开(公告)号：US20080079011A1

公开(公告)日：2008-04-03

申请号：US11866341

申请日：2007-10-02

申请人： Keun-Kyu SONG ,  Bo-Sung KIM ,  Seung-Hwan CHO

发明人： Keun-Kyu SONG ,  Bo-Sung KIM ,  Seung-Hwan CHO

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： G02F1/1368 ,  G02F1/167 ,  G02F2001/136231

摘要： A display substrate includes a thin film transistor and a pixel electrode. The thin film transistor includes source and drain electrodes, an active layer covering the source and drain electrodes, and a gate electrode formed on the active layer. The pixel electrode includes the same material as that of the gate electrode, and is formed in the process of forming the gate electrode to reduce the number of process steps and the number of masks.

摘要翻译： 显示基板包括薄膜晶体管和像素电极。 薄膜晶体管包括源极和漏极，覆盖源极和漏极的有源层和形成在有源层上的栅电极。 像素电极包括与栅电极相同的材料，并且在形成栅电极的过程中形成，以减少处理步骤的数量和掩模的数量。

公开(公告)号：US20080038867A1

公开(公告)日：2008-02-14

申请号：US11745722

申请日：2007-05-08

申请人： Jung-Han SHIN ,  Bo-Sung KIM ,  Seong-sik SHIN

发明人： Jung-Han SHIN ,  Bo-Sung KIM ,  Seong-sik SHIN

IPC分类号： H01L51/40

CPC分类号： H01L51/0005 ,  H01L51/052 ,  H01L51/0545

摘要： A method for manufacturing a thin film transistor array panel includes forming a gate electrode, forming a source electrode and a drain electrode opposing each other and separated from each other on the gate electrode, forming a gate insulator on the gate electrode, forming an organic semiconductor on the gate insulator, and forming a passivation member covering the organic semiconductor, wherein the source and drain electrodes contact the organic semiconductor, and an ink-jet printing process is used to form at least two among the gate insulator, the organic semiconductor, and the passivation member, and wherein a mixed solvent including at least two among a gate insulator material, an organic semiconductor material, and a passivation member material is sprayed in the ink-jet printing process.

摘要翻译： 一种制造薄膜晶体管阵列面板的方法包括形成栅电极，形成彼此相对的源电极和漏电极，并在栅电极上彼此分离，在栅电极上形成栅极绝缘体，形成有机半导体 在所述栅极绝缘体上形成覆盖所述有机半导体的钝化部件，其中所述源极和漏极与所述有机半导体接触，并且使用喷墨印刷工艺在所述栅极绝缘体，所述有机半导体和所述有机半导体中形成至少两个 钝化部件，并且其中在喷墨印刷工艺中喷涂包括栅极绝缘体材料，有机半导体材料和钝化部件材料中的至少两个的混合溶剂。

公开(公告)号：US20120003796A1

公开(公告)日：2012-01-05

申请号：US13230111

申请日：2011-09-12

申请人： Je-Hun LEE ,  Young-Min KIM ,  Bo-Sung KIM ,  Jun-Young LEE ,  Sung-Wook KANG

发明人： Je-Hun LEE ,  Young-Min KIM ,  Bo-Sung KIM ,  Jun-Young LEE ,  Sung-Wook KANG

IPC分类号： H01L21/336

CPC分类号： H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

摘要翻译： 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

公开(公告)号：US20110254011A1

公开(公告)日：2011-10-20

申请号：US12902761

申请日：2010-10-12

申请人： Young-Min KIM ,  Bo-Sung KIM ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Kang-Moon JO

发明人： Young-Min KIM ,  Bo-Sung KIM ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Kang-Moon JO

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

摘要翻译： 显示基板包括栅极线，栅极绝缘层，数据线，开关元件，保护绝缘层，栅极焊盘部分和数据焊盘部分。 栅极绝缘层设置在栅极线上。 开关元件连接到栅极线和数据线。 保护绝缘层设置在开关元件上。 栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极 孔通过保护层形成。 数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。

公开(公告)号：US20110233536A1

公开(公告)日：2011-09-29

申请号：US12839705

申请日：2010-07-20

申请人： Young-Min KIM ,  Yeon-Taek JEONG ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Bo-Sung KIM ,  Tae-Young CHOI

发明人： Young-Min KIM ,  Yeon-Taek JEONG ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Bo-Sung KIM ,  Tae-Young CHOI

IPC分类号： H01L29/786 ,  H01L21/368

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66969

摘要： A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other.

摘要翻译： 提供了包括实现优异的稳定性和电特性的氧化物半导体层的薄膜晶体管阵列面板及其制造方法。 薄膜晶体管阵列面板包括：基板; 设置在所述基板上并且包括选自氧化锌，氧化锡和氧化铪的金属氧化物的氧化物半导体层; 与氧化物半导体层重叠的栅电极; 设置在所述氧化物半导体层和所述栅电极之间的栅极绝缘膜; 以及源电极和漏电极，其设置成至少部分地与氧化物半导体层重叠并且彼此分离。

公开(公告)号：US20080073648A1

公开(公告)日：2008-03-27

申请号：US11859033

申请日：2007-09-21

申请人： Tae-Young CHOI ,  Bo-Sung KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM

IPC分类号： H01L51/10 ,  H01L29/04

CPC分类号： H01L27/283 ,  H01L51/102

摘要： A thin film transistor array panel includes a gate electrode formed on a substrate, a gate insulator covering the gate electrode, a source electrode including a first transparent material and disposed on the gate insulator, a drain electrode including a second transparent material and disposed on the gate insulator, and an organic semiconductor formed on the source and drain electrodes, and the gate insulator therebetween. The source electrode includes a first boundary opposing a second boundary of the drain electrode relative to the gate electrode, and the opposing boundaries overlap boundaries of the gate electrode with an alignment margin in the range of about −1 to +5 microns.

摘要翻译： 薄膜晶体管阵列面板包括形成在基板上的栅电极，覆盖栅电极的栅极绝缘体，包括第一透明材料并设置在栅极绝缘体上的源电极，包括第二透明材料的漏电极， 栅极绝缘体和形成在源极和漏极上的有机半导体以及栅极绝缘体之间。 源电极包括与漏电极相对于栅电极的第二边界相对的第一边界，并且相对的边界与栅电极的边界重叠，取向余量在约-1至+5微米的范围内。

公开(公告)号：US20070161258A1

公开(公告)日：2007-07-12

申请号：US11552877

申请日：2006-10-25

申请人： Ki-Heum NAM ,  Chear-Yeon MUN ,  Bo-Sung KIM

发明人： Ki-Heum NAM ,  Chear-Yeon MUN ,  Bo-Sung KIM

IPC分类号： H01L21/31

CPC分类号： H01L21/3003 ,  H01L21/28176 ,  H01L21/76828 ,  H01L21/76829

摘要： In an embodiment, a method of fabricating a semiconductor device having a hydrogen source layer includes forming an interlayer insulating layer on a semiconductor substrate. A hydrogen source layer is formed on the substrate having the interlayer insulating layer. A thermal annealing process is performed on the substrate having the hydrogen source layer such that hydrogen inside the hydrogen source layer is diffused to a surface of the semiconductor substrate. A conductive pattern is formed on the substrate having the thermally-treated hydrogen source layer. The conductive pattern may be a metal interconnection.

摘要翻译： 在一个实施例中，制造具有氢源层的半导体器件的方法包括在半导体衬底上形成层间绝缘层。 在具有层间绝缘层的基板上形成氢源层。 在具有氢源层的基板上进行热退火处理，使得氢源层内的氢扩散到半导体基板的表面。 在具有热处理氢源层的基板上形成导电图案。 导电图案可以是金属互连。

公开(公告)号：US20130171779A1

公开(公告)日：2013-07-04

申请号：US13670120

申请日：2012-11-06

申请人： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Doo-Na KIM ,  Eun-Hye PARK ,  Dong-Lim KIM ,  Hyun-Jae KIM ,  You-Seung RIM ,  Hyun-Soo LIM

发明人： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Doo-Na KIM ,  Eun-Hye PARK ,  Dong-Lim KIM ,  Hyun-Jae KIM ,  You-Seung RIM ,  Hyun-Soo LIM

IPC分类号： C09D5/00 ,  H01L29/66

CPC分类号： C09D5/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B35/62222 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/443 ,  C04B2235/444 ,  C04B2235/449 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

摘要翻译： 根据制造薄膜晶体管基板的方法，涂覆包含草酸金属盐和用于制造氧化物半导体的溶剂的组合物以形成薄膜，对薄膜进行退火，并将薄膜图案化以形成半导体 模式。

公开(公告)号：US20120184058A1

公开(公告)日：2012-07-19

申请号：US13430280

申请日：2012-03-26

申请人： Tae-Young CHOI ,  Bo-Sung KIM ,  Young-Min KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM ,  Young-Min KIM

IPC分类号： H01L33/50

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US20120138965A1

公开(公告)日：2012-06-07

申请号：US13112381

申请日：2011-05-20

申请人： Tae-Young CHOI ,  Kang-Moon JO ,  Bo-Sung KIM ,  Young-Min KIM

发明人： Tae-Young CHOI ,  Kang-Moon JO ,  Bo-Sung KIM ,  Young-Min KIM

IPC分类号： H01L33/62

CPC分类号： H01L27/1288 ,  H01L27/1225 ,  H01L27/1292

摘要： A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

摘要翻译： 显示基板包括基底基板，数据线，栅极线，开关元件，自组装单层（SAM）和像素电极。 数据线形成在基底基板上。 栅极线跨越数据线形成。 开关元件包括电连接到数据线的源电极，与源电极间隔开的漏电极，覆盖源电极和漏电极的半导体图案，以及电连接到栅极线并面向半导体图案的栅电极。 SAM围绕半导​​体图案设置，并且包括数据线的导电图案。 像素电极电连接到开关元件。