公开(公告)号：US20120120362A1

公开(公告)日：2012-05-17

申请号：US13173457

申请日：2011-06-30

申请人： Tae-Young CHOI ,  Bo Sung KIM ,  Young Min KIM ,  Seon-Pil JANG ,  Kang Moon JO ,  Yeon Taek JEONG ,  Ki Beom LEE

发明人： Tae-Young CHOI ,  Bo Sung KIM ,  Young Min KIM ,  Seon-Pil JANG ,  Kang Moon JO ,  Yeon Taek JEONG ,  Ki Beom LEE

IPC分类号： G02F1/1343 ,  H01L33/08 ,  H01L29/786

CPC分类号： H01L27/1225 ,  G02F1/13439 ,  G02F2001/13685 ,  G02F2001/1676

摘要： A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

摘要翻译： 薄膜晶体管阵列面板包括绝缘基板上的源电极和漏电极，绝缘基板上的氧化物半导体与源电极和漏电极重叠，钝化层与氧化物半导体和绝缘基板上的重叠， 钝化层上的栅极电极和连接到漏电极的像素电极。 栅电极和像素电极包括相同的材料。 在薄膜晶体管阵列面板的截面图中，氧化物半导体位于源电极和栅电极之间，在漏电极和栅电极之间。

公开(公告)号：US20110233536A1

公开(公告)日：2011-09-29

申请号：US12839705

申请日：2010-07-20

申请人： Young-Min KIM ,  Yeon-Taek JEONG ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Bo-Sung KIM ,  Tae-Young CHOI

发明人： Young-Min KIM ,  Yeon-Taek JEONG ,  Seon-Pil JANG ,  Seung-Hwan CHO ,  Bo-Sung KIM ,  Tae-Young CHOI

IPC分类号： H01L29/786 ,  H01L21/368

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66969

摘要： A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other.

摘要翻译： 提供了包括实现优异的稳定性和电特性的氧化物半导体层的薄膜晶体管阵列面板及其制造方法。 薄膜晶体管阵列面板包括：基板; 设置在所述基板上并且包括选自氧化锌，氧化锡和氧化铪的金属氧化物的氧化物半导体层; 与氧化物半导体层重叠的栅电极; 设置在所述氧化物半导体层和所述栅电极之间的栅极绝缘膜; 以及源电极和漏电极，其设置成至少部分地与氧化物半导体层重叠并且彼此分离。

公开(公告)号：US20120184058A1

公开(公告)日：2012-07-19

申请号：US13430280

申请日：2012-03-26

申请人： Tae-Young CHOI ,  Bo-Sung KIM ,  Young-Min KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM ,  Young-Min KIM

IPC分类号： H01L33/50

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US20120138965A1

公开(公告)日：2012-06-07

申请号：US13112381

申请日：2011-05-20

申请人： Tae-Young CHOI ,  Kang-Moon JO ,  Bo-Sung KIM ,  Young-Min KIM

发明人： Tae-Young CHOI ,  Kang-Moon JO ,  Bo-Sung KIM ,  Young-Min KIM

IPC分类号： H01L33/62

CPC分类号： H01L27/1288 ,  H01L27/1225 ,  H01L27/1292

摘要： A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

摘要翻译： 显示基板包括基底基板，数据线，栅极线，开关元件，自组装单层（SAM）和像素电极。 数据线形成在基底基板上。 栅极线跨越数据线形成。 开关元件包括电连接到数据线的源电极，与源电极间隔开的漏电极，覆盖源电极和漏电极的半导体图案，以及电连接到栅极线并面向半导体图案的栅电极。 SAM围绕半导​​体图案设置，并且包括数据线的导电图案。 像素电极电连接到开关元件。

公开(公告)号：US20100270553A1

公开(公告)日：2010-10-28

申请号：US12622078

申请日：2009-11-19

申请人： Tae-Young CHOI ,  Bo-Sung Kim ,  Young-Min Kim

发明人： Tae-Young CHOI ,  Bo-Sung Kim ,  Young-Min Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US20120100649A1

公开(公告)日：2012-04-26

申请号：US13100149

申请日：2011-05-03

申请人： Young-Min KIM ,  Seon-Pil JANG ,  Bo-Sung KIM ,  Yeon-Taek JEONG ,  Yong-Su LEE ,  Tae-Young CHOI ,  Ki-Beom LEE ,  Kang Moon JO

发明人： Young-Min KIM ,  Seon-Pil JANG ,  Bo-Sung KIM ,  Yeon-Taek JEONG ,  Yong-Su LEE ,  Tae-Young CHOI ,  Ki-Beom LEE ,  Kang Moon JO

IPC分类号： H01L33/08 ,  B05D3/06 ,  H01L21/336 ,  B05D5/00 ,  H01L21/26 ,  B05D3/02 ,  B05D5/06

CPC分类号： H01L29/7869 ,  H01L21/02667 ,  H01L21/324 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78633

摘要： Provided is a method for manufacturing a film structure.The method for manufacturing the film structure n includes forming a layer of a precursor material on a substrate, preheating the precursor material, and irradiating the precursor material with microwave radiation to form the film structure.

摘要翻译： 提供一种膜结构的制造方法。 制造薄膜结构体n的方法包括在基材上形成前体材料层，预热前体材料，并用微波辐射照射前体材料，形成薄膜结构体。

公开(公告)号：US20120326152A1

公开(公告)日：2012-12-27

申请号：US13526195

申请日：2012-06-18

申请人： Tae-Young CHOI ,  Doohyoung LEE ,  Yeontaek JEONG ,  Seon-Pil JANG ,  Bo Sung KIM ,  Youngmin KIM

发明人： Tae-Young CHOI ,  Doohyoung LEE ,  Yeontaek JEONG ,  Seon-Pil JANG ,  Bo Sung KIM ,  Youngmin KIM

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1288

摘要： A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating layer; a second insulating layer disposed on the semiconductor layer; and a gate electrode disposed on the second insulating layer to overlap with the source electrode and the drain electrode.

摘要翻译： 薄膜晶体管基板包括基底基板; 设置在所述基极上的第一绝缘层; 源电极和漏电极，设置在第一绝缘层上以彼此间隔开; 设置在所述源电极，所述漏电极和所述第一绝缘层上的半导体层; 设置在所述半导体层上的第二绝缘层; 以及设置在所述第二绝缘层上以与所述源电极和所述漏电极重叠的栅电极。

公开(公告)号：US20130234169A1

公开(公告)日：2013-09-12

申请号：US13619075

申请日：2012-09-14

申请人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

发明人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

摘要： In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

摘要翻译： 在制造薄膜晶体管的方法中，在具有栅电极的基底基板的快速表面上，在基底基板的第一表面，氧化物半导体层，绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图，以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上，并且蚀刻停止器，源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此，当形成活性图案和蚀刻停止物时，可以通过省略掩模来降低制造成本。

公开(公告)号：US20130052763A1

公开(公告)日：2013-02-28

申请号：US13424155

申请日：2012-03-19

申请人： Tae-Young CHOI ,  Bo-Sung KIM ,  Kwang-Yeol LEE ,  See-Won KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM ,  Kwang-Yeol LEE ,  See-Won KIM

IPC分类号： H01L33/28 ,  C01B13/14 ,  C01G9/02 ,  B82Y30/00 ,  B82Y20/00 ,  B82Y40/00

CPC分类号： C01B13/32 ,  B82Y30/00 ,  B82Y40/00 ,  C01G1/02 ,  C01G9/02 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64

摘要： A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

摘要翻译： 纳米棒的制造方法以及其中形成有包含金属氧化物的种子的显示基板的制造方法。 通过使种子与有机溶剂中的金属前体反应形成纳米棒。 因此，可以容易地形成纳米棒，并且可以提高纳米棒的制造可靠性和使用纳米棒的显示基板。

公开(公告)号：US20080073648A1

公开(公告)日：2008-03-27

申请号：US11859033

申请日：2007-09-21

申请人： Tae-Young CHOI ,  Bo-Sung KIM

发明人： Tae-Young CHOI ,  Bo-Sung KIM

IPC分类号： H01L51/10 ,  H01L29/04

CPC分类号： H01L27/283 ,  H01L51/102

摘要： A thin film transistor array panel includes a gate electrode formed on a substrate, a gate insulator covering the gate electrode, a source electrode including a first transparent material and disposed on the gate insulator, a drain electrode including a second transparent material and disposed on the gate insulator, and an organic semiconductor formed on the source and drain electrodes, and the gate insulator therebetween. The source electrode includes a first boundary opposing a second boundary of the drain electrode relative to the gate electrode, and the opposing boundaries overlap boundaries of the gate electrode with an alignment margin in the range of about −1 to +5 microns.

摘要翻译： 薄膜晶体管阵列面板包括形成在基板上的栅电极，覆盖栅电极的栅极绝缘体，包括第一透明材料并设置在栅极绝缘体上的源电极，包括第二透明材料的漏电极， 栅极绝缘体和形成在源极和漏极上的有机半导体以及栅极绝缘体之间。 源电极包括与漏电极相对于栅电极的第二边界相对的第一边界，并且相对的边界与栅电极的边界重叠，取向余量在约-1至+5微米的范围内。