公开(公告)号：US20090065761A1

公开(公告)日：2009-03-12

申请号：US11850742

申请日：2007-09-06

申请人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

发明人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

IPC分类号： H01L47/00 ,  H01L21/82

CPC分类号： H01L23/5256 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

公开(公告)号：US08159854B2

公开(公告)日：2012-04-17

申请号：US12495027

申请日：2009-06-30

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns

IPC分类号： G11C5/06

CPC分类号： H03K19/02 ,  G11C11/412 ,  G11C13/0002 ,  H01L49/00 ,  Y10T29/42

摘要： A piezo-effect transistor (PET) device includes a piezoelectric (PE) material disposed between first and second electrodes; and a piezoresistive (PR) material disposed between the second electrode and a third electrode, wherein the first electrode comprises a gate terminal, the second electrode comprises a common terminal, and the third electrode comprises an output terminal such that an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material.

摘要翻译： 压电效应晶体管（PET）器件包括设置在第一和第二电极之间的压电（PE）材料; 以及设置在第二电极和第三电极之间的压阻（PR）材料，其中第一电极包括栅极端子，第二电极包括公共端子，并且第三电极包括输出端子，使得PR的电阻 材料取决于PE材料上施加的电压，通过PE材料对PR材料的施加压力。

公开(公告)号：US20100073997A1

公开(公告)日：2010-03-25

申请号：US12234100

申请日：2008-09-19

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Xiao Hu Liu ,  Glenn J. Martyna ,  Martin Muser ,  Dennis M. Newns

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Xiao Hu Liu ,  Glenn J. Martyna ,  Martin Muser ,  Dennis M. Newns

IPC分类号： G11C11/00 ,  H04R17/00 ,  G11C7/00

CPC分类号： G11C23/00 ,  G11C13/0002 ,  G11C13/0004 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/148 ,  Y10T29/42

摘要： A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM.

摘要翻译： 压电编程的非易失性存储单元结构包括可编程压阻滞回材料（PRHM），其能够通过施加的压力循环而在低电阻状态和高电阻状态之间相互转换; 机械地耦合到PHRM的压电材料，使得跨压电材料施加的电压导致施加到PRHM的拉伸或压缩应力中的一个，这取决于所施加的电压的极性; 以及与PRHM电连通的一个或多个电极，其中所述一个或多个电极被配置为提供通过所述压电材料的写入编程电流路径和通过所述PRHM的读取电流路径。

公开(公告)号：US07545667B2

公开(公告)日：2009-06-09

申请号：US11393270

申请日：2006-03-30

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Dennis M. Newns ,  Matthew R. Wordeman ,  Albert M. Young

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Dennis M. Newns ,  Matthew R. Wordeman ,  Albert M. Young

IPC分类号： G11C11/00

CPC分类号： H01L45/144 ,  H01L23/5226 ,  H01L23/5252 ,  H01L23/5256 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.

摘要翻译： 用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。 加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。 因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接。

公开(公告)号：US20080186760A1

公开(公告)日：2008-08-07

申请号：US11672110

申请日：2007-02-07

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00 ,  H01L47/00 ,  H01L21/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

公开(公告)号：US07394089B2

公开(公告)日：2008-07-01

申请号：US11467294

申请日：2006-08-25

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US07750335B2

公开(公告)日：2010-07-06

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US20090045388A1

公开(公告)日：2009-02-19

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L45/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US07491965B2

公开(公告)日：2009-02-17

申请号：US12127994

申请日：2008-05-28

申请人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

发明人： James P. Doyle ,  Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Chung Hon Lam ,  Xiao Hu Liu ,  Dennis M. Newns ,  Christy S. Tyberg

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

摘要翻译： 用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面的电绝缘衬垫，其对应于其纵向轴线，留下细长加热器的相对端 元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的相对端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。

公开(公告)号：US07411818B1

公开(公告)日：2008-08-12

申请号：US11672110

申请日：2007-02-07

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。