公开(公告)号：US20090039331A1

公开(公告)日：2009-02-12

申请号：US11834851

申请日：2007-08-07

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00 ,  G11C11/00

CPC分类号： G11C17/165 ,  G11C13/0004 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料的结构。 该结构可以包括第一电极; 第二电极; 电连接第一电极和第二电极以使电流通过的相变材料; 以及围绕所述相变材料的氮化钽加热器层，用于通过向所述相变材料施加第二电流来将所述相变材料转换成非晶态绝缘状态和结晶导电状态。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US07750335B2

公开(公告)日：2010-07-06

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US20090045388A1

公开(公告)日：2009-02-19

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L45/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US07633079B2

公开(公告)日：2009-12-15

申请号：US11850742

申请日：2007-09-06

申请人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

发明人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

IPC分类号： H01L47/00

CPC分类号： H01L23/5256 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

公开(公告)号：US20090065761A1

公开(公告)日：2009-03-12

申请号：US11850742

申请日：2007-09-06

申请人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

发明人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

IPC分类号： H01L47/00 ,  H01L21/82

CPC分类号： H01L23/5256 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

公开(公告)号：US20080285335A1

公开(公告)日：2008-11-20

申请号：US12127909

申请日：2008-05-28

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-Kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-Kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

公开(公告)号：US07411818B1

公开(公告)日：2008-08-12

申请号：US11672110

申请日：2007-02-07

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

公开(公告)号：US20080186760A1

公开(公告)日：2008-08-07

申请号：US11672110

申请日：2007-02-07

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00 ,  H01L47/00 ,  H01L21/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

公开(公告)号：US20120270353A1

公开(公告)日：2012-10-25

申请号：US13532991

申请日：2012-06-26

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Glenn J. Martyna ,  Xiao Hu Liu ,  Dennis M. Newns ,  Kuan-Neng Chen

IPC分类号： H01L21/02

CPC分类号： H01L49/00 ,  H01C10/103

摘要： A coupling structure for coupling piezoelectric material generated stresses to an actuated device of an integrated circuit includes a rigid stiffener structure formed around a piezoelectric (PE) material and the actuated device, the actuated device comprising a piezoresistive (PR) material that has an electrical resistance dependent upon an applied pressure thereto; and a soft buffer structure formed around the PE material and PR material, the buffer structure disposed between the PE and PR materials and the stiffener structure, wherein the stiffener structure clamps both the PE and PR materials to a substrate over which the PE and PR materials are formed, and wherein the soft buffer structure permits the PE material freedom to move relative to the PR material, thereby coupling stress generated by an applied voltage to the PE material to the PR material so as change the electrical resistance of the PR material.

摘要翻译： 用于将压电材料产生的应力耦合到集成电路的致动装置的耦合结构包括围绕压电（PE）材料形成的刚性加强结构和致动装置，该致动装置包括具有电阻的压阻（PR）材料 取决于施加的压力; 以及围绕PE材料和PR材料形成的软缓冲结构，缓冲结构设置在PE和PR材料之间以及加强件结构之间，其中加强件结构将PE和PR材料夹持到基底上，PE和PR材料 并且其中软缓冲结构允许PE材料相对于PR材料自由移动，从而将由施加的电压产生的应力耦合到PE材料到PR材料，从而改变PR材料的电阻。

公开(公告)号：US08213224B2

公开(公告)日：2012-07-03

申请号：US12624141

申请日：2009-11-23

申请人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Robert L. Sandstrom

发明人： Bruce G. Elmegreen ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Robert L. Sandstrom

IPC分类号： G11C11/00

CPC分类号： H01L45/1233 ,  B82Y10/00 ,  G11C13/0004 ,  G11C2213/16 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/775 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1666

摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.

摘要翻译： 存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结， 邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。