公开(公告)号：US06982175B2

公开(公告)日：2006-01-03

申请号：US10770839

申请日：2004-02-02

申请人： David Johnson ,  Russell Westerman

发明人： David Johnson ,  Russell Westerman

IPC分类号： H01L21/302

CPC分类号： H01J37/32963 ,  H01J37/32935

摘要： An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

摘要翻译： 一种用于通过以特征处理频率监视所述过程的频谱发射的识别区域来确定时分复用过程的端点的改进方法。 该区域基于在时分复用过程中使用的材料的预期发射光谱来识别。 基于时分复用处理中的步骤的持续时间来确定特征处理频率。 监测光谱幅度的变化表明时分复用过程中的过程的终点和材料层之间的转换。

公开(公告)号：US06924235B2

公开(公告)日：2005-08-02

申请号：US10640469

申请日：2003-08-12

申请人： David Johnson ,  Russell Westerman ,  Shouliang Lai

发明人： David Johnson ,  Russell Westerman ,  Shouliang Lai

IPC分类号： B81C99/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01L21/67069

摘要： An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switched on and off, a mass flow controller is used to provide a relatively constant flow of gas. A gas bypass or a gas exhaust is provided such that when a gas inlet to the alternating etching/deposition chamber is closed an alternative path is provided for the flow of gas from the mass flow controller. The provision of a bypass or exhaust maintains the pressure of the gas received from the mass flow controller at a substantially constant level. The elimination or minimization of a pressure pulse of the gas helps increase the smoothness of the walls of high aspect ratio features etched in a silicon substrate in the alternating etching/deposition chamber.

摘要翻译： 通过本发明提供了将气体引入交替等离子体蚀刻/沉积室的改进方法。 为了最小化在沉积和蚀刻剂气体供应被打开和关闭时将压力脉冲引入到交替蚀刻/沉积室中，使用质量流量控制器来提供相对恒定的气体流。 提供气体旁路或气体排气，使得当交替蚀刻/沉积室的气体入口被关闭时，提供了用于来自质量流量控制器的气体流的替代路径。 旁路或排气管的设置将从质量流量控制器接收的气体的压力保持在基本恒定的水平。 消除或最小化气体的压力脉冲有助于增加在交替蚀刻/沉积室中在硅衬底中蚀刻的高纵横比特征的壁的平滑度。

公开(公告)号：US20070175856A1

公开(公告)日：2007-08-02

申请号：US11681004

申请日：2007-04-16

申请人： David Johnson ,  Russell Westerman ,  Sunil Srinivasan

发明人： David Johnson ,  Russell Westerman ,  Sunil Srinivasan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/30655 ,  H01L21/76283

摘要： The present invention provides a method and an apparatus for reducing, or eliminating, the notching observed in the creation of SOI structures on a substrate when plasma etching through an alternating deposition/etch process by modulating the RF bias that is applied to the cathode. Modulation of the bias voltage to the cathode is accomplished either discretely, between at least two frequencies, or continuously during the alternating deposition/etch process.

摘要翻译： 本发明提供了一种用于减少或消除在通过调制施加到阴极的RF偏压的交替沉积/蚀刻工艺的等离子体蚀刻时在衬底上产生SOI结构时观察到的凹口的方法和装置。 对阴极的偏置电压的调制在离散地，至少两个频率之间或在交替沉积/蚀刻过程期间连续地实现。

公开(公告)号：US20060070703A1

公开(公告)日：2006-04-06

申请号：US11229319

申请日：2005-09-16

申请人： David Johnson ,  Russell Westerman

发明人： David Johnson ,  Russell Westerman

IPC分类号： C23F1/00 ,  G01L21/30

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/3299

摘要： The present invention provides a method and an apparatus for improving the etch uniformity across a substrate during a plasma etch process that employs the use of an inductively coupled plasma helical inductor. The plasma apparatus comprising a vacuum chamber, a support member in the vacuum chamber for holding the substrate, an etchant gas supply for providing an etchant gas to the vacuum chamber, an exhaust in fluid communication with the vacuum chamber, an RF power source and a helical inductor disposed around or near a portion of the vacuum chamber. A sensor is provided for measuring a process attribute to generate a signal to a controller that then controls a mechanism that varies the position of the helical inductor so that the uniformity of the plasma etch is improved.

摘要翻译： 本发明提供了一种用于在使用电感耦合等离子体螺旋电感器的等离子体蚀刻工艺期间改善衬底上的蚀刻均匀性的方法和装置。 等离子体装置包括真空室，用于保持基板的真空室中的支撑构件，用于向真空室提供蚀刻剂气体的蚀刻剂气体供应源，与真空室流体连通的排气，RF电源和 设置在真空室的一部分周围或附近的螺旋电感器。 提供了一种用于测量处理属性以产生信号给控制器的传感器，该控制器然后控制改变螺旋电感器的位置的机构，从而提高等离子体蚀刻的均匀性。

公开(公告)号：US20060006139A1

公开(公告)日：2006-01-12

申请号：US11210248

申请日：2005-08-23

申请人： David Johnson ,  Russell Westerman

发明人： David Johnson ,  Russell Westerman

IPC分类号： G01L21/30

CPC分类号： G01N21/73 ,  B81C1/00579 ,  H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： The present invention provides a method for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a plasma chamber and subjected to an alternating cyclical process having an etching step and a deposition step. A variation in plasma emission intensity is monitored using known optical emission spectrometry techniques. A first wavelength region is selected based on a plasma emission from an etch by product and a second wavelength region is selected based on a plasma emission from a plasma background. A ratio of the first wavelength region to the second wavelength region is computed and used to adjust the monitoring of an attribute of a signal generated from the time division multiplex process. The alternating cyclical process is discontinued when endpoint is reached at a time that is based on the monitoring step.

摘要翻译： 本发明提供了一种在交替循环蚀刻过程或时分多路复用过程中建立端点的方法。 将衬底放置在等离子体室内并进行具有蚀刻步骤和沉积步骤的交替循环过程。 使用已知的光发射光谱技术监测等离子体发射强度的变化。 基于来自蚀刻产物的等离子体发射来选择第一波长区域，并且基于等离子体背景的等离子体发射来选择第二波长区域。 计算第一波长区域与第二波长区域的比率并用于调整从时分复用处理产生的信号的属性的监视。 当基于监测步骤的时间达到端点时，停止交替循环过程。

公开(公告)号：US08187483B2

公开(公告)日：2012-05-29

申请号：US11834299

申请日：2007-08-06

申请人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

IPC分类号： G01L21/00 ,  H01L21/00

CPC分类号： C23F4/00 ,  G03F1/54 ,  G03F1/80

摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.

摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。

公开(公告)号：US07115520B2

公开(公告)日：2006-10-03

申请号：US10815965

申请日：2004-03-31

申请人： David Johnson ,  Shouliang Lai ,  Russell Westerman

发明人： David Johnson ,  Shouliang Lai ,  Russell Westerman

IPC分类号： H01L21/461 ,  H01L21/302 ,  G05D7/00

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01L21/67253 ,  Y10T137/2544

摘要： The present invention provides a method for controlling pressure in a vacuum chamber during a time division multiplexed process. A throttle valve is pre-positioned and held for a predetermined period of time. A process gas is introduced into the vacuum chamber during the associated plasma step (deposition or etching) of the silicon wafer. At the end of the predetermined period of time, the process gas continues to flow with the throttle valve being released from the set position. At this point, the throttle valve is regulated through a proportional derivative and integral control for a period that lasts the remaining time of the associated plasma step.

摘要翻译： 本发明提供一种在时分复用过程中控制真空室中的压力的​​方法。 节气门预定位并保持预定时间段。 在硅晶片的相关等离子体步骤（沉积或蚀刻）期间，将工艺气体引入真空室。 在预定时间段结束时，处理气体继续流动，节流阀从设定位置释放。 此时，节流阀通过比例导数和积分控制进行调节，持续相关等离子体步骤的剩余时间。

公开(公告)号：US20050287815A1

公开(公告)日：2005-12-29

申请号：US11159415

申请日：2005-06-23

申请人： Shouliang Lai ,  David Johnson ,  Russell Westerman

发明人： Shouliang Lai ,  David Johnson ,  Russell Westerman

IPC分类号： C23F1/00 ,  G01L21/30 ,  G01R31/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/66

CPC分类号： H01L21/67253 ,  H01L21/30655 ,  H01L22/20

摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.

摘要翻译： 本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。 在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。 然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。

公开(公告)号：US20050112891A1

公开(公告)日：2005-05-26

申请号：US10968823

申请日：2004-10-18

申请人： David Johnson ,  Russell Westerman ,  Sunil Srinivasan

发明人： David Johnson ,  Russell Westerman ,  Sunil Srinivasan

IPC分类号： H01L21/3065 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30655 ,  H01L21/76283

摘要： The present invention provides a method and an apparatus for reducing, or eliminating, the notching observed in the creation of SOI structures on a substrate when plasma etching through an alternating deposition/etch process by modulating the RF bias that is applied to the cathode. Modulation of the bias voltage to the cathode is accomplished either discretely, between at least two frequencies, or continuously during the alternating deposition/etch process.

摘要翻译： 本发明提供了一种用于减少或消除在通过调制施加到阴极的RF偏压的交替沉积/蚀刻工艺的等离子体蚀刻时在衬底上产生SOI结构时观察到的凹口的方法和装置。 对阴极的偏置电压的调制在离散地，至少两个频率之间或在交替沉积/蚀刻过程期间连续地实现。

公开(公告)号：US06846747B2

公开(公告)日：2005-01-25

申请号：US10407831

申请日：2003-04-04

申请人： Russell Westerman ,  David Johnson

发明人： Russell Westerman ,  David Johnson

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/306 ,  H01L21/308 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/308 ,  Y10S438/935

摘要： An improved method for etching a substrate that reduces the formation of pillars is provided by the present invention. In accordance with the method, the residence time of an etch gas utilized in the process is decreased and the power of an inductively coupled plasma source used to dissociate the etch gas is increased. A low bias RF voltage is provided during the etching process. The RF bias voltage is ramped between different bias levels utilized during the etch process. An inductively coupled plasma confinement ring is utilized to force the reactive species generated in the inductively coupled plasma source over the surface of the substrate. These steps reduce or eliminate the formation of pillars during the etching process.

摘要翻译： 通过本发明提供了用于蚀刻减少柱形成的衬底的改进方法。 根据该方法，在该方法中使用的蚀刻气体的停留时间降低，并且用于解离蚀刻气体的电感耦合等离子体源的功率增加。 在蚀刻过程中提供低偏压RF电压。 RF偏置电压在蚀刻过程中使用的不同偏置电平之间变化。 电感耦合等离子体限制环被用来迫使电感耦合等离子体源中产生的反应物质在衬底的表面上。 这些步骤在蚀刻过程中减少或消除了柱的形成。