公开(公告)号：US20110086453A1

公开(公告)日：2011-04-14

申请号：US12970321

申请日：2010-12-16

申请人： Dae Won KIM ,  Dae Sung KAL

发明人： Dae Won KIM ,  Dae Sung KAL

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2224/73265

摘要： Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.

摘要翻译： 公开了一种具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法。 发光器件包括衬底和形成在衬底上的多个发光单元。 每个发光单元包括下半导体层，位于下半导体层的一个区域上的上半导体层和插入在下半导体层和上半导体层之间的有源层。 此外，隔离绝缘层填充在多个发光单元之间的区域中，以将发光单元彼此隔离。 此外，布线将发光元件彼此电连接。 每个布线连接一个发光单元的下半导体层和与一个发光单元相邻的另一个发光单元的上半导体层。

公开(公告)号：US20120235158A1

公开(公告)日：2012-09-20

申请号：US13482851

申请日：2012-05-29

申请人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

发明人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

IPC分类号： H01L33/40

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20110049472A1

公开(公告)日：2011-03-03

申请号：US12942635

申请日：2010-11-09

申请人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

发明人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

IPC分类号： H01L33/06

CPC分类号： H01L33/465 ,  H01L33/105 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

摘要翻译： 发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和 电极焊盘，布置在透明电极层上以覆盖开口中的DBR。

公开(公告)号：US20100151604A1

公开(公告)日：2010-06-17

申请号：US12633603

申请日：2009-12-08

申请人： Dae Sung KAL ,  Dae Won Kim ,  Won Cheol Seo ,  Kyung Hee Ye ,  Joo Woong Lee

发明人： Dae Sung KAL ,  Dae Won Kim ,  Won Cheol Seo ,  Kyung Hee Ye ,  Joo Woong Lee

IPC分类号： H01L21/30

CPC分类号： H01L27/153 ,  H01L24/24 ,  H01L33/44 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/24137 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

摘要翻译： 本发明公开了一种发光二极管。 发光二极管包括布置在基板上的多个发光单元，每个发光单元包括布置在第一半导体层上的第一半导体层和第二半导体层; 布置在每个发光单元上并且包括用于暴露第一半导体层的第一开口和暴露第二半导体层的第二开口的第一电介质层; 布置在所述第一介电层上以连接两个所述发光单元的导线; 以及布置在第一介电层和导线上的第二电介质层。 第一电介质层和第二电介质层包含相同的材料，第一电介质层比第二电介质层厚。

公开(公告)号：US20090020780A1

公开(公告)日：2009-01-22

申请号：US12143963

申请日：2008-06-23

申请人： Sang Joon LEE ,  Dae Sung KAL ,  Dae Won KIM

发明人： Sang Joon LEE ,  Dae Sung KAL ,  Dae Won KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/325

摘要： Disclosed is a light emitting diode (LED) with an improved structure. The LED comprises an N-type semiconductor layer, a P-type semiconductor layer and an active layer interposed between the N-type and P-type semiconductor layers. The P-type compound semiconductor layer has a laminated structure comprising a P-type clad layer positioned on the active layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer. Accordingly, holes are more smoothly injected into the active layer from the P-type semiconductor layer, thereby improving the recombination rate of electrons and holes.

摘要翻译： 公开了一种具有改进结构的发光二极管（LED）。 LED包括N型半导体层，P型半导体层和介于N型和P型半导体层之间的有源层。 P型化合物半导体层具有包括位于有源层上的P型覆盖层，位于P型覆盖层上的空穴注入层和位于空穴注入层上的P型接触层的层叠结构 。 因此，从P型半导体层向空穴更顺畅地注入有源层，从而提高电子和空穴的复合率。

公开(公告)号：US20130009197A1

公开(公告)日：2013-01-10

申请号：US13617810

申请日：2012-09-14

申请人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

发明人： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC分类号： H01L33/36

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US20120127718A1

公开(公告)日：2012-05-24

申请号：US13361631

申请日：2012-01-30

申请人： Dae Won KIM ,  Dae Sung KAL

发明人： Dae Won KIM ,  Dae Sung KAL

IPC分类号： F21V21/005

CPC分类号： H05B33/0821 ,  H01L27/153 ,  H01L2224/24137 ,  H01L2224/48137 ,  H01L2224/49107

摘要： An AC light emitting device is disclosed. The AC light emitting device includes at least four substrates. Serial arrays each of which has a plurality of light emitting cells connected in series are positioned on the substrates, respectively. Meanwhile, first connector means electrically connect the serial arrays formed on respective different substrates. At least two array groups each of which has at least two of the serial arrays connected in series by the first connector means are formed. The at least two array groups are connected in reverse parallel to operate. Accordingly, there is provided an AC light emitting device capable of being driven under an AC power source.

摘要翻译： 公开了一种AC发光器件。 交流发光装置包括至少四个基板。 串联阵列中的每一个具有串联连接的多个发光单元分别位于基板上。 同时，第一连接器装置电连接形成在各个不同基板上的串联阵列。 形成至少两个阵列组，每个阵列组具有由第一连接器装置串联连接的至少两个串行阵列。 至少两个阵列组反向并联连接以进行操作。 因此，提供了能够在AC电源下驱动的AC发光装置。

公开(公告)号：US20090108250A1

公开(公告)日：2009-04-30

申请号：US12203762

申请日：2008-09-03

申请人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

发明人： Hwa Mok KIM ,  Dae Won KIM ,  Dae Sung KAL

IPC分类号： H01L33/00

CPC分类号： H01L33/465 ,  H01L33/105 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

摘要翻译： 发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和 电极焊盘，布置在透明电极层上以覆盖开口中的DBR。