公开(公告)号：US20180240708A1

公开(公告)日：2018-08-23

申请号：US15900247

申请日：2018-02-20

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda

IPC分类号： H01L21/78 ,  H01L21/687 ,  H01L21/304 ,  G01N29/06

CPC分类号： H01L21/78 ,  G01N21/9505 ,  G01N29/0654 ,  G01N2291/2697 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/67288 ,  H01L21/681 ,  H01L21/68714 ,  H01L22/12 ,  H01L22/20

摘要： A processing method for a wafer including a crack detection step for irradiating illumination of a wavelength transparent to wafer, picking up an image of the wafer, and detecting whether a crack is generated within the wafer, a crack direction verification step for verifying, when a crack is detected, to which one of the first and second directions a direction in which the crack extends is nearer, a first cutting step for positioning the cutting blade to a scheduled division line of a direction decided to be a direction farther from the direction in which the crack extends from between the first and second directions and cutting the scheduled division line, and next a second cutting step for positioning the cutting blade to a scheduled division line of a direction decided to be nearer to the direction in which the crack extends and cutting the scheduled division line.

公开(公告)号：US09761492B2

公开(公告)日：2017-09-12

申请号：US15291746

申请日：2016-10-12

申请人： DISCO CORPORATION

发明人： Takumi Shotokuji ,  Noboru Takeda ,  Naotoshi Kirihara

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L33/00 ,  H01L33/48 ,  H01L33/62

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0033

摘要： A processing method for optical device wafers includes a shielded tunnel forming step and a dividing step. In the shielded tunnel forming step, a sapphire substrate is irradiated with a pulse laser beam having such a wavelength as to be transmitted through the sapphire substrate along regions corresponding to planned dividing lines. The light focus point of the beam is positioned inside the substrate from the back surface side of the substrate. Fine pores and amorphous regions that shield the fine pores form shielded tunnels along the planned dividing lines. In the dividing step, an external force is applied to the optical device wafer, and the optical device wafer is divided into individual optical device chips along the planned dividing lines. In the shielded tunnel forming step, a spherical aberration is generated by causing the laser beam to be incident on a condensing lens with a divergence angle.

公开(公告)号：US20170103921A1

公开(公告)日：2017-04-13

申请号：US15291746

申请日：2016-10-12

申请人： DISCO CORPORATION

发明人： Takumi Shotokuji ,  Noboru Takeda ,  Naotoshi Kirihara

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L33/00 ,  H01L33/48 ,  H01L33/62

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0033

摘要： A processing method for optical device wafers includes a shielded tunnel forming step and a dividing step. In the shielded tunnel forming step, a sapphire substrate is irradiated with a pulse laser beam having such a wavelength as to be transmitted through the sapphire substrate along regions corresponding to planned dividing lines. The light focus point of the beam is positioned inside the substrate from the back surface side of the substrate. Fine pores and amorphous regions that shield the fine pores form shielded tunnels along the planned dividing lines. In the dividing step, an external force is applied to the optical device wafer, and the optical device wafer is divided into individual optical device chips along the planned dividing lines. In the shielded tunnel forming step, a spherical aberration is generated by causing the laser beam to be incident on a condensing lens with a divergence angle.

公开(公告)号：US20160270151A1

公开(公告)日：2016-09-15

申请号：US15065499

申请日：2016-03-09

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Takumi Shotokuji

IPC分类号： H05B1/02 ,  H01L21/268 ,  H01L21/78

CPC分类号： H01L21/78 ,  B23K26/53 ,  B23K2103/56 ,  H01L21/67092 ,  H01L21/67132

摘要： A single-crystal substrate having a film deposited on a surface thereof is processed to divide the single-crystal substrate along a plurality of preset division lines, including a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the single-crystal substrate to the single-crystal substrate from a reverse side thereof along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, a film removing step of removing the film deposited on the single-crystal substrate along the division lines, and a dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step and the film removing step are performed to divide the single-crystal substrate along the division lines along which the shield tunnels have been formed.

摘要翻译： 处理具有沉积在其表面上的膜的单晶基板沿着多个预设分割线分割单晶基板，包括屏蔽隧道形成步骤，施加具有透过该波长的波长的脉冲激光束 将单晶基板沿着分割线从相反侧向单晶基板施加，以形成屏蔽通道，每个包含细孔和屏蔽细孔的非晶区域沿着分割线在单晶基板中，a 沿分割线除去沉积在单晶衬底上的膜的膜去除步骤，以及在执行屏蔽隧道形成步骤和膜除去步骤的单晶衬底上施加外力以划分外部力的分割步骤 沿着沿其形成屏蔽隧道的划分线的单晶基板。

公开(公告)号：US20150343559A1

公开(公告)日：2015-12-03

申请号：US14725773

申请日：2015-05-29

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda

IPC分类号： B23K26/00 ,  C03B33/08 ,  C03B33/02

CPC分类号： B23K26/55 ,  C03B33/0222 ,  C03B33/03 ,  C03B33/033 ,  C03B33/04 ,  C03B33/082 ,  C03B33/091 ,  Y02P40/57

摘要： A chip having a desired shape is formed from a platelike workpiece. The chip manufacturing method includes a shield tunnel forming step of applying a pulsed laser beam to the workpiece from a focusing unit included in a pulsed laser beam applying unit along the contour of the chip to be formed, with the focal point of the pulsed laser beam set at a predetermined depth from the upper surface of the workpiece, thereby forming a plurality of shield tunnels inside the workpiece along the contour of the chip to be formed. Each shield tunnel has a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. In a chip forming step, ultrasonic vibration is applied to the workpiece to break the contour of the chip where the shield tunnels have been formed, thereby forming the chip from the workpiece.

摘要翻译： 具有期望形状的芯片由板状工件形成。 芯片制造方法包括：屏蔽隧道形成步骤，用脉冲激光束的焦点将脉冲激光束从包括在脉冲激光束施加单元中的聚焦单元沿待形成的芯片的轮廓施加到工件上 设置在距离工件的上表面的预定深度处，从而沿待形成的芯片的轮廓在工件内部形成多个屏蔽通道。 每个屏蔽隧道具有细孔和形成在细孔周围的用于屏蔽细孔的非晶区域。 在切屑形成步骤中，对工件施加超声波振动，以破坏已经形成屏蔽通道的芯片的轮廓，从而从工件形成芯片。

公开(公告)号：US20140334511A1

公开(公告)日：2014-11-13

申请号：US14276571

申请日：2014-05-13

申请人： DISCO CORPORATION

发明人： Noboru Takeda ,  Hiroshi Morikazu

IPC分类号： H01S3/10

CPC分类号： H01S3/10 ,  H01L21/00 ,  H01L21/78 ,  H01L23/00 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/32341 ,  H01L2924/00

摘要： A laser processing method of applying a pulsed laser beam to a single crystal substrate to thereby process the single crystal substrate. The laser processing method includes a numerical aperture setting step of setting the numerical aperture (NA) of a focusing lens for focusing the pulsed laser beam so that the value obtained by dividing the numerical aperture (NA) of the focusing lens by the refractive index (N) of the single crystal substrate falls within the range of 0.05 to 0.2, a positioning step of relatively positioning the focusing lens and the single crystal substrate in the direction along the optical axis of the focusing lens so that the focal point of the pulsed laser beam is set at a desired position in the direction along the thickness of the single crystal substrate, and a shield tunnel forming step of applying the pulsed laser beam to the single crystal substrate so as to focus the pulsed laser beam at the focal point set in the single crystal substrate thereby forming a shield tunnel extending between the focal point and a beam incident surface to which the pulsed laser beam is applied.

摘要翻译： 一种将脉冲激光束施加到单晶衬底从而处理单晶衬底的激光加工方法。 激光加工方法包括数值孔径设定步骤，设定用于聚焦脉冲激光束的聚焦透镜的数值孔径（NA），使得通过将聚焦透镜的数值孔径（NA）除以折射率（ N）在0.05〜0.2的范围内，将聚焦透镜和单晶基板沿着聚焦透镜的光轴的方向相对定位的定位步骤，使得脉冲激光的焦点 光束被设置在沿着单晶衬底的厚度的方向上的期望位置处，以及屏蔽隧道形成步骤，将脉冲激光束施加到单晶衬底，以将脉冲激光束聚焦在设置在 单晶衬底由此形成在焦点和施加脉冲激光束的光束入射表面之间延伸的屏蔽隧道。

公开(公告)号：US11597040B2

公开(公告)日：2023-03-07

申请号：US15919977

申请日：2018-03-13

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda

IPC分类号： H01L21/683 ,  H01L21/268 ,  B23K26/53 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/08 ,  H01L21/67 ,  H01L21/68 ,  B23K101/40 ,  H01L21/78

摘要： A laser beam irradiation unit of a laser processing apparatus includes: a laser oscillator in which a repetition frequency is set so as to oscillate a pulsed laser having a pulse width shorter than a time of electronic excitation caused by irradiating the workpiece with a laser beam and oscillate at least two pulsed lasers within the electronic excitation time; a condenser that irradiates the workpiece held on the chuck table with the pulsed laser beams oscillated by the laser oscillator; and a thinning-out unit that is disposed between the laser oscillator and the condenser and guides the pulsed laser beams necessary for processing to the condenser by thinning out and discarding pulsed laser beams in a predetermined cycle.

公开(公告)号：US10103061B2

公开(公告)日：2018-10-16

申请号：US15057428

申请日：2016-03-01

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Takumi Shotokuji

IPC分类号： H01L21/78 ,  H01L21/67 ,  H01L21/268 ,  H01L21/683 ,  B23K26/00 ,  B23K26/40 ,  H01S5/02 ,  H01S5/323

摘要： Disclosed herein is a processing method of a single-crystal substrate having a film formed on a front side or a back side thereof to divide the single-crystal substrate along a plurality of preset division lines. The method includes a film removing step of removing the film along the division lines, a shield tunnel forming step of applying a pulsed laser beam having a wavelength which permeates through the single-crystal substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, and dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step is performed to divide the single-crystal substrate along the division lines.

公开(公告)号：US20160268155A1

公开(公告)日：2016-09-15

申请号：US15068141

申请日：2016-03-11

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Takumi Shotokuji

IPC分类号： H01L21/683 ,  H01L21/78

CPC分类号： H01L21/6836 ,  B23K26/00 ,  H01L21/78 ,  H01L33/00 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

摘要： A method of dividing a single-crystal substrate along a plurality of preset division lines, includes a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, a protective member adhering step of adhering a protective member to the substrate before or after the shield tunnel forming step, and a grinding step of holding the protective member on the substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the substrate to bring the substrate to a predetermined thickness, and dividing the substrate along the division lines along which the shield tunnels have been formed.

摘要翻译： 沿着多个预设分割线分割单晶基板的方法包括：屏蔽隧道形成步骤，沿着分割线施加具有透过基板的波长的脉冲激光束，形成屏蔽通道，每个包括一个 细孔和屏蔽细孔的非晶区域，在屏蔽隧道形成步骤之前或之后将保护构件粘附到基板上的保护构件粘合步骤，以及将保护构件保持在基板上的研磨步骤， 隧道形成工序和保护部件粘合工序，在研磨装置的夹盘上进行研磨，使基板的背面成为规定的厚度，并沿着屏蔽通道的分割线分割基板 已经形成。

公开(公告)号：US20160260630A1

公开(公告)日：2016-09-08

申请号：US15057428

申请日：2016-03-01

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Takumi Shotokuji

IPC分类号： H01L21/683 ,  H01L33/00 ,  H01S5/02 ,  H01L21/78

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  H01L21/268 ,  H01L21/67092 ,  H01L21/6836 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： Disclosed herein is a processing method of a single-crystal substrate having a film formed on a front side or a back side thereof to divide the single-crystal substrate along a plurality of preset division lines. The method includes a film removing step of removing the film along the division lines, a shield tunnel forming step of applying a pulsed laser beam having a wavelength which permeates through the single-crystal substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, and dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step is performed to divide the single-crystal substrate along the division lines.

摘要翻译： 这里公开了一种单晶衬底的处理方法，该单晶衬底具有形成在其前侧或背面上的膜，以沿着多个预设分割线分割单晶衬底。 该方法包括沿着分割线除去膜的膜去除步骤，屏蔽隧道形成步骤，沿着分割线施加具有透过单晶基板的波长的脉冲激光束，形成屏蔽通道，每个包括一个 细孔和沿着分割线在单晶基板中屏蔽细孔的非晶区域，以及在执行屏蔽隧道形成步骤的单晶基板上施加外力的分割步骤， 晶体基板沿分割线。