公开(公告)号：US06448597B1

公开(公告)日：2002-09-10

申请号：US09382638

申请日：1999-08-25

申请人： Naoki Kasai ,  Toshihiro Iizuka

发明人： Naoki Kasai ,  Toshihiro Iizuka

IPC分类号： H01L2976

CPC分类号： H01L27/10855 ,  H01L27/10814 ,  H01L28/91

摘要： A DRAM includes a MOSFET and a stacked capacitor in each memory cell. The stacked capacitor includes a bottom electrode substantially of a cylindrical shape, a top electrode received in the cylindrical-shape bottom electrode, and a capacitor dielectric film for insulation therebetween. The cylindrical shape of the bottom electrode allows a larger deviation for alignment between the capacitor and the capacitor contact.

摘要翻译： DRAM在每个存储单元中包括MOSFET和堆叠电容器。 叠层电容器包括基本上为圆筒形状的底部电极，容纳在圆柱形底部电极中的顶部电极和用于绝缘的电容器电介质膜。 底部电极的圆柱形状允许电容器和电容器触点之间的对准偏差较大。

公开(公告)号：US06338996B1

公开(公告)日：2002-01-15

申请号：US09537415

申请日：2000-03-29

申请人： Toshihiro Iizuka

发明人： Toshihiro Iizuka

IPC分类号： H01L2131

CPC分类号： H01L28/55 ,  H01L21/31691 ,  H01L28/60 ,  H01L28/75

摘要： In a semiconductor memory device production method for a semiconductor memory device having a capacitor formed by a high dielectric insulation film and a noble metal upper electrode successively formed on a noble metal lower electrode, the formation of the capacitor is followed by anneal in a gas mixture atmosphere of oxygen concentration of 0 to 5% and nitrogen at temperature of 300 to 400 degrees C. This enables to reduce the leak current at room temperature and suppress leak current increase during a high temperature operation.

公开(公告)号：US08815678B2

公开(公告)日：2014-08-26

申请号：US11928460

申请日：2007-10-30

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L21/8242 ,  H01L21/316 ,  H01L49/02 ,  C23C16/455 ,  G11C11/404 ,  H01L21/314 ,  H01L27/108 ,  C23C16/40

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0

公开(公告)号：US08212299B2

公开(公告)日：2012-07-03

申请号：US10170813

申请日：2002-06-13

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1−x)O2(0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0

公开(公告)号：US08169013B2

公开(公告)日：2012-05-01

申请号：US11637147

申请日：2006-12-12

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： A semiconductor device having a logic section and a memory section that are formed on the same semiconductor chip, including: a first transistor formed in the logic section and having gate electrodes and source and drain regions, and a second transistor formed in the memory section having gate electrodes, source and drain regions and a capacitor, the capacitor being of a MIM structure and having an upper and a lower metal electrode and a capacitor dielectric film sandwiched therebetween, the capacitor dielectric film being formed of a dielectric material which is selected from the group consisting of ZrO2, Hf92, (Zrx, Hf1-x)O2 (0

摘要翻译： 一种具有形成在同一半导体芯片上的逻辑部分和存储部分的半导体器件，包括：形成在逻辑部分中并具有栅电极和源极和漏极区域的第一晶体管，以及形成在存储部分中的第二晶体管， 栅极电极，源极和漏极区域以及电容器，电容器是MIM结构，并且具有夹在其间的上部和下部金属电极和电容器电介质膜，所述电容器电介质膜由介电材料形成，所述绝缘材料选自 由ZrO2，Hf92，（Zrx，Hf1-x）O2（0

公开(公告)号：US20060121671A1

公开(公告)日：2006-06-08

申请号：US11324536

申请日：2006-01-04

申请人： Tomoe Yamamoto ,  Toshihiro Iizuka

发明人： Tomoe Yamamoto ,  Toshihiro Iizuka

IPC分类号： H01L21/8242

CPC分类号： H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/90 ,  H01L2924/0002 ,  Y10S257/906 ,  H01L2924/00

摘要： There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MOxCyNz wherein x, y and z meet the conditions: 0

摘要翻译： 提供了一种半导体器件，其包括由高介电常数材料制成的电介质膜，其中薄膜中的漏电流被降低并且具有提高的器件可靠性。 具体地说，电介质膜142是具有由下式表示的组成的金属化合物膜：其中x，y 和z满足条件：0

公开(公告)号：US20050051824A1

公开(公告)日：2005-03-10

申请号：US10967436

申请日：2004-10-18

申请人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

发明人： Toshihiro Iizuka ,  Tomoe Yamamoto ,  Mami Toda ,  Shintaro Yamamichi

IPC分类号： H01L27/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/00 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L27/108 ,  C23C16/405 ,  C23C16/45525 ,  G11C11/404 ,  G11C2207/104 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90

摘要： In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0

摘要翻译： 在薄膜晶体管中，上部电极和下部电极中的每一个由选自由TiN，Ti，W，WN，Pt，Ir，Ru所示的金属和金属氮化物组成的组中的至少一种形成 。 电容器电介质膜由选自ZrO 2，HfO 2，（Zr x，Hf 1-x）O 2（0