公开(公告)号：US10309158B2

公开(公告)日：2019-06-04

申请号：US12961787

申请日：2010-12-07

申请人： Debkumar Mukhopadhyay ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez

发明人： Debkumar Mukhopadhyay ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez

IPC分类号： E21B10/55 ,  B22F7/06 ,  B24D3/10 ,  C22C26/00 ,  E21B10/567 ,  E21B10/573 ,  B22F5/00

摘要： In an embodiment, a method of fabricating a polycrystalline diamond compact (“PDC”) includes forming a polycrystalline diamond (“PCD”) table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The PCD table includes bonded diamond grains defining interstitial regions, with the metal-solvent catalyst disposed therein. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process under diamond-stable temperature-pressure conditions to partially infiltrate the at least partially leached PCD table with an infiltrant. A maximum temperature (T), a total process time (t), and a maximum pressure (P) of the second HPHT process are chosen so that β is about 2° Celsius·hours/gigapascals (“° C.·h/GPa”) to about 325° C.·h/GPa, with β represented as β=T·t/P.

公开(公告)号：US08702824B1

公开(公告)日：2014-04-22

申请号：US12875380

申请日：2010-09-03

申请人： Mohammad N. Sani ,  Jair J. Gonzalez ,  Andrew E. Dadson

发明人： Mohammad N. Sani ,  Jair J. Gonzalez ,  Andrew E. Dadson

IPC分类号： B24D11/00

CPC分类号： B24D99/005 ,  B24D18/00 ,  C22C26/00 ,  C22C2001/1073 ,  C22C2026/001 ,  C22C2204/00 ,  E21B10/5735

摘要： In an embodiment, a polycrystalline diamond compact (“PDC”) includes a substrate and a polycrystalline diamond (“PCD”) table bonded to the substrate. The PCD table includes a first PCD region having bonded-together diamond grains, with the first PCD region exhibiting a first thermal stability and a first diamond density. The PCD table further includes an intermediate second PCD region bonded to the substrate and disposed between the first PCD region and the substrate. The intermediate second PCD region includes bonded-together diamond grains. The intermediate second PCD region exhibits a second thermal stability that is less than that of the first thermal stability of the first PCD region and a second diamond density less than that of the first diamond density of the first PCD region.

摘要翻译： 在一个实施例中，多晶金刚石复合体（“PDC”）包括与基底结合的基底和多晶金刚石（“PCD”）台。 PCD台包括具有接合在一起的金刚石晶粒的第一PCD区域，第一PCD区域具有第一热稳定性和第一金刚石密度。 所述PCD台还包括中间的第二PCD区域，所述中间第二PCD区域结合到所述基板并设置在所述第一PCD区域和所述基板之间。 中间第二PCD区域包括结合在一起的金刚石晶粒。 中间第二PCD区域表现出比第一PCD区域的第一热稳定性小的第二热稳定性，第二热稳定性小于第一PCD区域的第一金刚石密度的第二热稳定性。

公开(公告)号：US20130092451A1

公开(公告)日：2013-04-18

申请号：US13275372

申请日：2011-10-18

申请人： Debkumar Mukhopadhyay ,  Jair J. Gonzalez

发明人： Debkumar Mukhopadhyay ,  Jair J. Gonzalez

IPC分类号： E21B10/46 ,  B01J3/06 ,  B24D3/10

CPC分类号： B24D3/06 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  B24D18/0009 ,  B24D99/005 ,  E21B10/46 ,  E21B10/56

摘要： Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with a cobalt-based alloy infiltrant having a composition at or near a eutectic composition of the cobalt-based alloy infiltrant.

摘要翻译： 实施例涉及多晶金刚石压块（“PDC”）以及制造这样的PDC的方法，其中至少部分浸出的多晶金刚石（“PCD”）工作台用低粘度钴基合金渗透剂渗透。 在一个实施方案中，一种方法包括在第一高压/高温（“HPHT”）方法中在金属溶剂催化剂存在下形成PCD表。 该方法包括至少部分浸出PCD表以从其中除去至少一部分金属 - 溶剂催化剂以形成至少部分浸出的PCD台。 该方法包括使至少部分浸出的PCD台和基板经受有效的至少部分浸渗的PCD台的第二HPHT方法，所述第二HPHT工艺具有钴基合金浸渗剂，所述钴基合金浸渗剂具有或接近共晶组成 钴基合金浸润剂。

公开(公告)号：US08286735B1

公开(公告)日：2012-10-16

申请号：US13330471

申请日：2011-12-19

申请人： Craig H. Cooley ,  Jeffery B. Lund ,  Jair J. Gonzalez

发明人： Craig H. Cooley ,  Jeffery B. Lund ,  Jair J. Gonzalez

IPC分类号： E21B10/62 ,  E21B10/633

CPC分类号： E21B10/55 ,  E21B3/00 ,  E21B10/42 ,  E21B10/567 ,  E21B10/573 ,  E21B10/62 ,  E21B10/627 ,  E21B10/633 ,  E21B2010/545

摘要： A rotary drill bit is disclosed. The rotary drill bit may include a bit body, a cutting pocket defined in the bit body, and a cutting element rotatably coupled to the bit body. The cutting element may be positioned at least partially within the cutting pocket. The rotary drill bit may also include a rotation-inducing member adjacent to the cutting element for inducing rotation of the cutting element relative to the cutting pocket. The rotation-inducing member may include a resilient member or a vibrational member. The rotary drill bit may also include protrusions extending from an interior of the cutting pocket adjacent to an outer diameter of the cutting element. A method of drilling a formation is also disclosed.

摘要翻译： 公开了一种旋转钻头。 旋转钻头可以包括钻头体，限定在钻头体中的切削槽，以及可旋转地联接到钻头体的切削元件。 切割元件可以至少部分地定位在切割凹槽内。 旋转钻头还可以包括与切割元件相邻的旋转诱导构件，用于引导切割元件相对于切割凹槽的旋转。 旋转诱导构件可以包括弹性构件或振动构件。 旋转钻头还可以包括从切割凹槽的内部邻近切割元件的外径延伸的突起。 还公开了一种钻井地层的方法。

公开(公告)号：US08162082B1

公开(公告)日：2012-04-24

申请号：US12425053

申请日：2009-04-16

申请人： Jair J. Gonzalez ,  Jed Clarke ,  Neil Haddock

发明人： Jair J. Gonzalez ,  Jed Clarke ,  Neil Haddock

IPC分类号： E21B10/36 ,  E21B10/55

CPC分类号： E21B10/567

摘要： Embodiments of the invention relate to superabrasive compacts including multiple superabrasive cutting portions and methods of fabricating such superabrasive compacts. In an embodiment, a superabrasive compact comprises a cemented carbide substrate including a first interfacial surface and a second interfacial surface longitudinally spaced from the first interfacial surface. A first superabrasive cutting portion may be bonded to the first interfacial surface of the cemented carbide substrate. The first superabrasive cutting portion includes a first working surface. A second superabrasive cutting portion may be bonded to the second interfacial surface of the cemented carbide substrate and spaced from the first superabrasive cutting portion. The second superabrasive cutting portion includes a second working surface that generally opposes the first working surface of the first superabrasive cutting portion.

摘要翻译： 本发明的实施例涉及包括多个超级磨料切割部分的超级磨料压块以及制造这种超级磨料压块的方法。 在一个实施例中，超级磨料致密体包括硬质合金基底，其包括第一界面和与第一界面表面纵向间隔开的第二界面表面。 第一超研磨切割部分可以结合到硬质合金基底的第一界面表面。 第一超研磨切割部包括第一工作面。 第二超级磨料切割部分可以结合到硬质合金基体的第二界面表面并且与第一超研磨切割部分间隔开。 第二超级磨料切割部分包括通常与第一超研磨切割部分的第一工作表面相对的第二工作表面。

公开(公告)号：US20120012401A1

公开(公告)日：2012-01-19

申请号：US13037548

申请日：2011-03-01

申请人： Jair J. Gonzalez ,  Neil D. Haddock

发明人： Jair J. Gonzalez ,  Neil D. Haddock

IPC分类号： E21B10/36 ,  B24D3/10 ,  E21B10/46

CPC分类号： E21B10/5735 ,  B22F2003/244 ,  B22F2005/001 ,  B24D3/10 ,  B24D99/005 ,  C04B35/528 ,  C04B2235/3847 ,  C04B2237/36 ,  C04B2237/363 ,  C04B2237/555 ,  C04B2237/62 ,  C04B2237/70 ,  C04B2237/76 ,  C22C26/00 ,  C22C2204/00

摘要： In various embodiments, a polycrystalline diamond compact (“PDC”) comprises a substrate including an interfacial surface having a raised region. In an embodiment, a PDC comprises a substrate including an interfacial surface having a generally cylindrical raised region and a peripheral region extending about the generally cylindrical raised region. The generally cylindrical raised region extends to a height above the peripheral region of about 450 μm or less. The PDC includes a PCD table bonded to the interfacial surface of the substrate. The PCD table includes an upper surface and at least one peripheral surface, and includes a plurality of bonded diamond grains defining interstitial regions. At least a portion of the interstitial regions includes a metallic constituent therein. In another embodiment, instead of employing a generally cylindrical raised region, the interfacial surface may include a plurality of raised arms extending above the face. Each raised arm extends radially and circumferentially.

摘要翻译： 在各种实施方案中，多晶金刚石复合体（“PDC”）包括包含具有凸起区域的界面的基材。 在一个实施例中，PDC包括基底，其包括具有大致圆柱形凸起区域的界面表面和围绕大致圆柱形凸起区域延伸的周边区域。 大致圆柱形的凸起区域延伸到高于约450μm或更小的周边区域的高度。 PDC包括结合到基板的界面的PCD台。 PCD台包括上表面和至少一个外围表面，并且包括限定间隙区域的多个结合金刚石颗粒。 间隙区域的至少一部分在其中包括金属成分。 在另一个实施例中，代替采用大致圆柱形的凸起区域，界面可以包括在面上方延伸的多个凸起臂。 每个凸起的臂都径向和圆周地延伸。

公开(公告)号：US09272392B2

公开(公告)日：2016-03-01

申请号：US13275372

申请日：2011-10-18

申请人： Debkumar Mukhopadhyay ,  Jair J. Gonzalez

发明人： Debkumar Mukhopadhyay ,  Jair J. Gonzalez

IPC分类号： E21B10/46 ,  B24D3/06 ,  B01J3/06 ,  B24D18/00 ,  B24D99/00

CPC分类号： B24D3/06 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  B24D18/0009 ,  B24D99/005 ,  E21B10/46 ,  E21B10/56

摘要： Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with a cobalt-based alloy infiltrant having a composition at or near a eutectic composition of the cobalt-based alloy infiltrant.

摘要翻译： 实施例涉及多晶金刚石压块（“PDC”）以及制造这样的PDC的方法，其中至少部分浸出的多晶金刚石（“PCD”）工作台用低粘度钴基合金渗透剂渗透。 在一个实施方案中，一种方法包括在第一高压/高温（“HPHT”）方法中在金属溶剂催化剂存在下形成PCD表。 该方法包括至少部分浸出PCD表以从其中除去至少一部分金属 - 溶剂催化剂以形成至少部分浸出的PCD台。 该方法包括使至少部分浸出的PCD台和基板经受有效的至少部分浸渗的PCD台的第二HPHT方法，所述第二HPHT工艺具有钴基合金浸渗剂，所述钴基合金浸渗剂具有或接近共晶组成 钴基合金浸润剂。

公开(公告)号：US08727044B2

公开(公告)日：2014-05-20

申请号：US13070636

申请日：2011-03-24

申请人： Jiang Qian ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez ,  Craig H. Cooley

发明人： Jiang Qian ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez ,  Craig H. Cooley

IPC分类号： E21B10/36

CPC分类号： C22C26/00 ,  B22F5/00 ,  C09K3/1409 ,  E21B10/567 ,  F16C33/043 ,  F16C33/26 ,  F16C2206/04 ,  F16C2352/00

摘要： In an embodiment, a polycrystalline diamond compact (“PDC”) includes a substrate and a pre-sintered polycrystalline diamond (“PCD”) table bonded to the substrate. The pre-sintered PCD table includes an upper surface, a back surface bonded to the substrate, and at least one lateral surface extending between the upper surface and the back surface. The pre-sintered PCD table includes a region including at least a residual amount of at least one interstitial constituent disposed in at least a portion of the interstitial regions thereof, and a bonding region. The at least one interstitial constituent includes at least one metal carbonate and/or at least one metal oxide. The region extends inwardly from the upper surface and the at least one lateral surface.

摘要翻译： 在一个实施方案中，多晶金刚石复合体（“PDC”）包括基底和与基底结合的预烧结多晶金刚石（“PCD”）台。 预烧结PCD台包括上表面，与基底结合的后表面，以及在上表面和后表面之间延伸的至少一个侧表面。 预烧结PCD表包括至少包括设置在其间隙区域的至少一部分中的至少一个间隙成分的剩余量的区域和接合区域。 至少一种间隙成分包括至少一种金属碳酸盐和/或至少一种金属氧化物。 该区域从上表面和至少一个侧表面向内延伸。

公开(公告)号：US08663349B2

公开(公告)日：2014-03-04

申请号：US12608155

申请日：2009-10-29

申请人： Mohammad N. Sani ,  Jair J. Gonzalez ,  Andrew E. Dadson ,  Debkumar Mukhopadhyay

发明人： Mohammad N. Sani ,  Jair J. Gonzalez ,  Andrew E. Dadson ,  Debkumar Mukhopadhyay

IPC分类号： B24D11/00

CPC分类号： B24D3/10 ,  B22F3/24 ,  B22F5/00 ,  B22F7/06 ,  B24D18/0009 ,  B24D18/0027 ,  C22C26/00 ,  Y10T428/12028 ,  Y10T428/12056 ,  Y10T428/24355 ,  Y10T428/30

摘要： Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) and methods of fabricating polycrystalline diamond tables and PDCs in a manner that facilitates removal of metal-solvent catalyst used in the manufacture of polycrystalline diamond tables of such PDCs.

摘要翻译： 本发明的实施方案涉及多晶金刚石压块（“PDC”）以及制造多晶金刚石表和PDC的方法，其方式是有助于去除用于制造这种PDC的多晶金刚石表的金属 - 溶剂催化剂。

公开(公告)号：US08353371B2

公开(公告)日：2013-01-15

申请号：US12626139

申请日：2009-11-25

申请人： Craig H. Cooley ,  Jair J. Gonzalez

发明人： Craig H. Cooley ,  Jair J. Gonzalez

IPC分类号： E21B10/36 ,  E21B10/42

CPC分类号： E21B10/567 ,  B24D3/008 ,  B24D99/005 ,  C04B35/528 ,  C04B2235/3847 ,  C04B2237/36 ,  C04B2237/363 ,  C04B2237/555 ,  C04B2237/58 ,  C04B2237/62 ,  C04B2237/70 ,  C04B2237/76 ,  E21B10/46 ,  E21B10/5735 ,  Y10T428/24488 ,  Y10T428/24496 ,  Y10T428/24545

摘要： In various embodiments, a polycrystalline diamond compact (“PDC”) comprises a substrate including an interfacial surface having a raised region. The PDC comprises a polycrystalline diamond (“PCD”) table bonded to the interfacial surface of the substrate. The PCD table defines an upper surface and exhibits a thickness over the raised region. The PCD table includes a plurality of bonded diamond grains defining a plurality of interstitial regions. A first region of the PCD table adjacent to the substrate includes metal-solvent catalyst disposed interstitially between the bonded diamond grains thereof, and a leached second region of the PCD table extends inwardly from the upper surface. The interstitial regions of the leached second region are depleted of metal-solvent catalyst. The geometry of the PCD table and raised region may be selected so that residual compressive stresses therein are retained to a sufficient level after leaching to provide a damage tolerant/thermally-stable PCD table.

摘要翻译： 在各种实施例中，多晶金刚石复合体（PDC）包括包括具有凸起区域的界面的基底。 PDC包括结合到衬底的界面表面的多晶金刚石（PCD）工作台。 PCD表定义了上表面，并且在凸起区域上表现出厚度。 PCD表包括限定多个间隙区域的多个结合金刚石晶粒。 与基板相邻的PCD台的第一区域包括在其结合的金刚石晶粒之间间隙地设置的金属溶剂催化剂，并且PCD台的浸出的第二区域从上表面向内延伸。 浸出的第二区域的间隙区域耗尽金属 - 溶剂催化剂。 可以选择PCD表和凸起区域的几何形状，使得其中的残余压缩应力在浸出之后保持在足够的水平以提供耐损伤/热稳定的PCD表。