Wick systems for complexed gas technology
    11.
    发明授权
    Wick systems for complexed gas technology 失效
    复合气体技术的芯片系统

    公开(公告)号:US07648682B2

    公开(公告)日:2010-01-19

    申请号:US11743925

    申请日:2007-05-03

    IPC分类号: B01D50/00 B01D53/02 B01D19/00

    CPC分类号: F17C11/00 Y10T137/0396

    摘要: The invention relates to an improvement in apparatus and process for effecting storage and delivery of a gas. The storage and delivery apparatus is comprised of a storage and dispensing vessel containing a medium capable of storing a gas and permitting delivery of the gas stored in the medium from the vessel, the improvement comprising: (a) a reactive liquid having Lewis acidity or basicity; (b) a gas liquid complex in a reversible reacted state formed under conditions of pressure and temperature by contacting the gas having Lewis acidity with the reactive liquid having Lewis basicity or the gas having Lewis basicity with the reactive liquid having Lewis acidity; (c) a non-reactive wick medium holding and dispersing the reactive liquid and the gas liquid complex therein.

    摘要翻译: 本发明涉及用于实现气体的储存和输送的设备和方法的改进。 储存和输送装置由储存和分配容器组成,储存和分配容器含有能够储存气体并允许从容器中输送存储在介质中的气体的介质,其改进包括:(a)具有路易斯酸度或碱度的反应性液体 ; (b)在压力和温度条件下通过使具有路易斯酸度的气体与具有路易斯碱性的反应性液体或具有路易斯碱性的气体与具有路易斯酸度的反应性液体接触而形成的可逆反应状态的气液络合物; (c)保持并分散其中的反应性液体和气体液体络合物的非反应性芯吸介质。

    Method for depositing zinc oxide at low temperatures and products formed thereby
    12.
    发明授权
    Method for depositing zinc oxide at low temperatures and products formed thereby 有权
    低温沉积氧化锌的方法及由此形成的产品

    公开(公告)号:US08197914B2

    公开(公告)日:2012-06-12

    申请号:US11284193

    申请日:2005-11-21

    IPC分类号: H05H1/24

    摘要: The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.

    摘要翻译: 本发明公开了一种用于在低温下沉积n型和p型氧化锌基透明导电氧化物(TCO)的等离子体增强化学气相沉积(PECVD)工艺,在玻璃和温度敏感材料如塑料上具有优异的光学和电学性能 和聚合物。 具体地说,它公开了用于通过用B或F和p型ZnO掺杂以将氮掺杂在玻璃上的优异的光学和电学性质以及用于TCO应用的诸如塑料和聚合物的温度敏感材料来沉积n型ZnO的PECVD工艺。 该方法利用挥发性锌化合物,氩和/或氦气作为稀释气体,二氧化碳作为氧化剂和掺杂剂或反应物的混合物以沉积所需的ZnO基TCO。

    Method for Making a Chlorosilane
    13.
    发明申请
    Method for Making a Chlorosilane 有权
    氯硅烷的制备方法

    公开(公告)号:US20110113628A1

    公开(公告)日:2011-05-19

    申请号:US12754909

    申请日:2010-04-06

    IPC分类号: B21D51/16

    摘要: The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiH3Cl, SiH2Cl2, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.

    摘要翻译: 本文所述的方法提供了一种用于在进料流中相对于硅烷以摩尔收率为50%或更大的方式制备含有SiH 3 Cl,SiH 2 Cl 2及其组合的至少一种最终产物的氯化硅烷的方法。 因此,本文所述的方法提供包含一种或多种氯化硅烷的最终产物,其通过使含有硅烷和氯化氢的反应混合物与催化剂在足以提供最终产物的温度和时间下接触。

    Method for making a chlorosilane
    17.
    发明授权
    Method for making a chlorosilane 有权
    制备氯硅烷的方法

    公开(公告)号:US08206676B2

    公开(公告)日:2012-06-26

    申请号:US12754909

    申请日:2010-04-06

    IPC分类号: C01B33/08

    摘要: The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiH3Cl, SiH2Cl2, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.

    摘要翻译: 本文所述的方法提供了一种用于在进料流中相对于硅烷以摩尔收率为50%或更大的方式制备含有SiH 3 Cl,SiH 2 Cl 2及其组合的至少一种最终产物的氯化硅烷的方法。 因此,本文所述的方法提供包含一种或多种氯化硅烷的最终产物,其通过使含有硅烷和氯化氢的反应混合物与催化剂在足以提供最终产物的温度和时间下接触。