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11.发明授权公开(公告)号：US08434704B2
公开(公告)日：2013-05-07
申请号：US12991879
申请日：2009-04-09
CPC分类号： B02C23/06 , B02C17/00 , B02C17/20 , B22F9/20 , B22F2009/041 , B22F2009/043 , B22F2009/049 , B22F2999/00 , C01B19/002 , C01B19/007 , C01B33/02 , C01B33/113 , C01G21/21 , C01G28/00 , C01G30/00 , C01P2002/82 , C01P2004/04 , C01P2006/40 , C09K11/62 , C09K11/668 , C09K11/70 , C09K11/74 , C09K11/75 , C09K11/881 , C09K11/883 , C22C1/0491 , B22F9/04
摘要： A method and apparatus of producing inorganic semiconducting nanoparticles having a stable surface includes providing an inorganic bulk semiconductor material milled in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of the semiconductor material, or prevent the formation of such oxides to provide semiconducting nanoparticles having a stable surface, allowing electrical contact between the nanoparticles. The milling media and/or one or more components of the mill include the selected reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminum, or an alloy containing one or more of these metals. Alternatively, the selected reducing agent includes a liquid contained in the mill during milling, which is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof.
摘要翻译： 制备具有稳定表面的无机半导体纳米颗粒的方法和装置包括提供在选择的还原剂存在下研磨的无机体半导体材料。 还原剂用于化学还原半导体材料的氧化物，或阻止形成这种氧化物以提供具有稳定表面的半导体纳米颗粒，从而允许纳米颗粒之间的电接触。 研磨介质和/或研磨机的一个或多个组分包括所选择的还原剂。 研磨介质或研磨机通常由选自铁，铬，钴，镍，锡，钛，钨，钒和铝的金属或包含这些金属中的一种或多种的合金组成。 或者，选择的还原剂包括在研磨期间包含在研磨机中的液体，其通常是含有盐酸，硫酸，硝酸，乙酸，甲酸或碳酸中的任一种的酸性溶液或其混合物。
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12.发明申请公开(公告)号：US20120018551A1
公开(公告)日：2012-01-26
申请号：US12991879
申请日：2009-04-09
CPC分类号： B02C23/06 , B02C17/00 , B02C17/20 , B22F9/20 , B22F2009/041 , B22F2009/043 , B22F2009/049 , B22F2999/00 , C01B19/002 , C01B19/007 , C01B33/02 , C01B33/113 , C01G21/21 , C01G28/00 , C01G30/00 , C01P2002/82 , C01P2004/04 , C01P2006/40 , C09K11/62 , C09K11/668 , C09K11/70 , C09K11/74 , C09K11/75 , C09K11/881 , C09K11/883 , C22C1/0491 , B22F9/04
摘要： A method is provided of producing inorganic semiconducting nanoparticles having a stable surface. The method comprises providing an inorganic bulk semiconductor material, such as silicon or germanium, and milling the bulk semiconductor material in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of one or more component elements of the semiconductor material, or prevent the formation of such oxides by being preferentially oxidised, thereby to provide semiconducting nanoparticles having a stable surface which allows electrical contact between the nanoparticles. The milling may take place in a mill in which the milling media and/or one or more components of the mill comprise the selected reducing agent. For example, the milling can be carried out in a high energy mill with a hammer action in which a pestle of the mill, a mortar of the mill, or both are composed of the selected reducing agent, or a low energy, stirred media mill, such as a ball mill, a rod mill or similar, in which the milling media, a lining of the mill, or both are composed of the reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminium, or an alloy containing one or more of said metals. In another embodiment of the method, the selected reducing agent comprises a liquid contained in the mill during milling of the bulk semiconductor material. The liquid is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof. The invention extends to a mill for carrying out the method.
摘要翻译： 提供了制备具有稳定表面的无机半导体纳米颗粒的方法。 该方法包括提供诸如硅或锗之类的无机体半导体材料，以及在选择的还原剂存在下研磨体半导体材料。 还原剂用于化学还原半导体材料的一种或多种组分元素的氧化物，或通过优先氧化来防止形成这种氧化物，从而提供具有允许纳米颗粒之间电接触的稳定表面的半导体纳米颗粒。 研磨可以在其中研磨介质和/或研磨机的一个或多个组分包含所选择的还原剂的研磨机中进行。 例如，铣削可以在具有锤击作用的高能磨机中进行，其中研磨机的研杵，研磨机的砂浆或两者均由选择的还原剂或低能量的搅拌介质研磨机 ，例如球磨机，棒磨机或类似物，其中研磨介质，研磨机的衬里或两者都由还原剂组成。 研磨介质或研磨机通常由选自铁，铬，钴，镍，锡，钛，钨，钒和铝的金属或含有一种或多种所述金属的合金组成。 在该方法的另一个实施方案中，所选择的还原剂包括在研磨体内半导体材料期间包含在研磨机中的液体。 液体通常是含有盐酸，硫酸，硝酸，乙酸，甲酸或碳酸中的任何一种或其混合物的酸性溶液。 本发明延伸到用于实施该方法的轧机。
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公开(公告)号：US20090004832A1
公开(公告)日：2009-01-01
申请号：US12158837
申请日：2006-12-18
CPC分类号： C09D11/08 , C09D5/24 , C09D11/52 , C09D191/005 , C09D191/02
摘要： A method of producing a printable composition comprises mixing a quantity of particulate semiconductor material with a quantity of a binder. The semiconductor material is typically nanoparticulate silicon with a particle size in the range from 5 nanometres to 10 microns. The binder is a self-polymerising material comprising a natural oil, or a derivative or synthetic analogue thereof. Preferably the binder comprises a natural polymer formed by auto-polymerisation of a precursor consisting of a natural oil, or its derivatives including pure unsaturated fatty acids, mono- and di-glycerides, or methyl and ethyl esters of the corresponding fatty acids. The method may include applying the printable composition to a substrate, in single or multiple layers, and allowing the printable composition to cure to define the component or conductor on the substrate.
摘要翻译： 制造可印刷组合物的方法包括将一定量的颗粒状半导体材料与一定量的粘合剂混合。 半导体材料通常是粒径在5纳米到10微米范围内的纳米颗粒状硅。 粘合剂是包含天然油或其衍生物或合成类似物的自聚合材料。 优选地，粘合剂包括通过由天然油或其衍生物（包括纯不饱和脂肪酸，单甘油酯和甘油二酯）或相应脂肪酸的甲基和乙酯的自身聚合形成的天然聚合物。 该方法可以包括以单层或多层将可印刷组合物施加到基材上，并允许可印刷组合物固化以限定基材上的组分或导体。
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14.发明申请Thin film semiconductor device and method of manufacturing a thin film semiconductor device 有权薄膜半导体器件及薄膜半导体器件的制造方法公开(公告)号：US20060199313A1
公开(公告)日：2006-09-07
申请号：US10543475
申请日：2004-01-30
申请人： Margit Harting , David Britton
发明人： Margit Harting , David Britton
CPC分类号： H01L31/022425 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02521 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L29/16 , H01L29/66848 , H01L29/8126 , H01L31/03921 , H01L31/046 , H01L31/202 , Y02E10/50 , Y02P70/521 , Y10S977/775 , Y10S977/778 , Y10S977/785
摘要： A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate 10 of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are printed using an offset lithography printing process. A first active layer comprises source 12.1 and drain 12.2 conductors of colloidal silver ink, that are printed directly onto the paper substrate. A second active layer is an intrinsic semiconductor layer 14 of colloidal nanocrystalline silicon ink which is printed onto the first layer. A third active layer comprises a metallic conductor 16 of colloidal silver which is printed onto the second layer to form a gate electrode. This invention extends to other thin film semiconductors such as photovoltaic cells and to a method of manufacturing semiconductors.
摘要翻译： 金属半导体场效应晶体管形式的薄膜半导体包括纸基材10的基片10和多个沉积在基片上的薄膜活性无机层。 使用胶版印刷印刷方法印刷有源层。 第一有源层包括直接印刷到纸基底上的胶体银墨的源12.1和漏12.2导体。 第二有源层是印刷在第一层上的胶体纳米晶硅墨的本征半导体层14。 第三有源层包括胶体银的金属导体16，其被印刷到第二层上以形成栅电极。 本发明延伸到诸如光伏电池的其他薄膜半导体以及制造半导体的方法。
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