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22 条记录 (耗时 0.03 秒)

    Removal of transition metal ternary and/or quaternary barrier materials from a substrate
    12.
    发明申请
    Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
    从基底去除过渡金属三元和/或四元阻挡材料

    公开(公告)号：US20050112901A1

    公开(公告)日：2005-05-26

    申请号：US10942301

    申请日：2004-09-15

    申请人： Bing Ji ,  Martin Plishka ,  Dingjun Wu ,  Peter Badowski ,  Eugene Karwacki

    发明人： Bing Ji ,  Martin Plishka ,  Dingjun Wu ,  Peter Badowski ,  Eugene Karwacki

    IPC分类号： C23C16/44 ,  C23G5/00 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461

    CPC分类号： H01L21/32135 ,  C23C16/4405 ,  C23G5/00 ,  H01L21/32136 ,  Y10S438/905

    摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

    摘要翻译： 本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。 在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

    Process for titanium nitride removal
    13.
    发明申请
    Process for titanium nitride removal 审中-公开
    氮化钛去除工艺

    公开(公告)号：US20060016783A1

    公开(公告)日：2006-01-26

    申请号：US10896588

    申请日：2004-07-22

    申请人： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： C23G5/00 ,  C23C16/4405 ,  H01L21/32135 ,  H01L21/32136

    摘要： A process of removing titanium nitride from a surface of a substrate includes: providing a process gas including at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance; enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location; providing the substrate at a substrate temperature greater than 50° C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate, wherein the contacting occurs at a second location differing from the first location.

    摘要翻译： 从衬底表面除去氮化钛的方法包括：提供包含至少一种选自含氟物质和含氯物质的反应物的工艺气体; 用所述至少一种反应物的至少一种反应性物质富集工艺气体以形成富集的工艺气体，其中所述富集在第一位置进行; 在大于50℃的衬底温度下提供衬底，其中衬底的表面至少部分地涂覆有氮化钛; 以及使所述基底表面上的所述氮化钛与所述富集的工艺气体接触，以从所述衬底的表面挥发和去除所述氮化钛，其中所述接触发生在与所述第一位置不同的第二位置处。

    Method for cleaning deposition chambers for high dielectric constant materials
    14.
    发明申请
    Method for cleaning deposition chambers for high dielectric constant materials 失效
    清洁高介电常数材料沉积室的方法

    公开(公告)号：US20050108892A1

    公开(公告)日：2005-05-26

    申请号：US10721719

    申请日：2003-11-25

    申请人： Dingjun Wu ,  Bing Ji ,  Stephen Motike ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Bing Ji ,  Stephen Motike ,  Eugene Karwacki

    IPC分类号： H01L21/304 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/316 ,  F26B3/00 ,  B08B3/12

    CPC分类号： C23C16/4405

    摘要： A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

    摘要翻译： 本文公开了一种用于干蚀刻和室清洁的高介电常数材料的方法。 在本发明的一个方面，提供了一种清洁物质的方法，该方法包括介电常数大于来自反应器表面的至少一部分的二氧化硅的介电常数，包括：引入包含硼的第一气体混合物 其中第一气体混合物与其中所含的物质反应以提供挥发性产物和含硼副产物; 将包含含氟反应剂的第二气体混合物引入反应器中，其中第二气体混合物与其中所含的含硼副产物反应形成挥发性产物; 并从反应器中除去挥发性产物。

    Adsorbent for moisture removal from fluorine-containing fluids
    15.
    发明授权
    Adsorbent for moisture removal from fluorine-containing fluids 有权
    用于从含氟流体中除湿的吸附剂

    公开(公告)号：US06709487B1

    公开(公告)日：2004-03-23

    申请号：US10278131

    申请日：2002-10-22

    申请人： Chun Christine Dong ,  Madhukar Bhaskara Rao ,  Dingjun Wu

    发明人： Chun Christine Dong ,  Madhukar Bhaskara Rao ,  Dingjun Wu

    IPC分类号： B01D5304

    CPC分类号： B01D53/261 ,  B01D53/28 ,  Y10S95/90

    摘要： An adsorbent, method, and apparatus involving same for the removal of moisture from a fluoride-containing fluid such as gaseous nitrogen trifluoride are disclosed herein. In certain preferred embodiments, the adsorbent of the present invention comprises an organic support having a porosity of 30% or greater and a pore size of 2 &mgr;m or less; and at least one metal fluoride disposed within at least a portion of the organic substrate.

    摘要翻译： 本文公开了一种用于从含氟化物的流体例如气态三氟化氮中除去水分的吸附剂，方法和装置。 在某些优选的实施方式中，本发明的吸附剂包含孔隙率为30％以上，孔径为2μm以下的有机载体， 以及至少一种配置在有机基材的至少一部分内的金属氟化物。

    Selective etching of titanium nitride with xenon difluoride
    16.
    发明申请
    Selective etching of titanium nitride with xenon difluoride 审中-公开
    用氙二氟化物选择性蚀刻氮化钛

    公开(公告)号：US20070117396A1

    公开(公告)日：2007-05-24

    申请号：US11285056

    申请日：2005-11-22

    申请人： Dingjun Wu ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Eugene Karwacki

    IPC分类号： H01L21/302

    CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028

    摘要： This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO2 or SiN surface having TiN thereon is contacted with XeF2 in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF2 can be preformed or formed in situ by reaction between Xe and a fluorine compound.

    摘要翻译： 本发明涉及一种用于从二氧化硅（石英）和通常存在于半导体沉积室设备和工具中的SiN表面选择性蚀刻TiN的改进方法。 在该过程中，其上具有TiN的SiO 2或SiN表面与接触区中的XeF 2 N接触，以选择性地将TiN转化为挥发性物质，然后将挥发性物质 从接触区域中取出。 XeF 2可以通过Xe和氟化合物之间的反应预处理或原位形成。

    Method and process for reactive gas cleaning of tool parts
    18.
    发明申请
    Method and process for reactive gas cleaning of tool parts 审中-公开
    工具零件反应气体清洗的方法和工艺

    公开(公告)号：US20060254613A1

    公开(公告)日：2006-11-16

    申请号：US11130307

    申请日：2005-05-16

    申请人： Dingjun Wu ,  Eugene Karwacki ,  Bing Ji

    发明人： Dingjun Wu ,  Eugene Karwacki ,  Bing Ji

    IPC分类号： B08B6/00

    CPC分类号： C23C16/4405 ,  B08B7/00 ,  B08B7/0035 ,  C23C14/564

    摘要： This invention relates to an improvement in the cleaning of contaminated tool parts having a coating of unwanted residue formed in a semiconductor deposition chamber. In this process, the contaminated parts to be cleaned are removed from the semiconductor deposition chamber and placed in a reaction chamber off-line from the semiconductor reactor deposition chamber, i.e. on off-line gas reaction chamber. The coating of residue on the contaminated parts is removed in an off-line reactor by contacting the contaminated parts with a reactive gas under conditions for converting the residue to a volatile species while in said off-line reactor and then removing the volatile species from said off-line gas reaction chamber.

    摘要翻译： 本发明涉及在半导体淀积室中形成的具有不想要的残留物的涂层的污染的工具部件的清洁的改进。 在这个过程中，待清洁的被污染的部件被从半导体淀积室中取出并放置在反应室中离开半导体反应堆淀积室，即离线气体反应室。 在离线反应器中，通过使污染部分与反应性气体接触的条件下，将污染部分上残留物的涂层除去，同时在所述离线反应器中将残余物转化为挥发性物质，然后从所述离子反应器中除去挥发性物质 离线气体反应室。

    Method for enhancing fluorine utilization
    19.
    发明申请
    Method for enhancing fluorine utilization 审中-公开
    提高氟利用率的方法

    公开(公告)号：US20060017043A1

    公开(公告)日：2006-01-26

    申请号：US10897811

    申请日：2004-07-23

    申请人： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Bing Ji ,  Eugene Karwacki

    IPC分类号： C09K3/00 ,  B08B6/00

    CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

    摘要： A process for enhancing the fluorine utilization of a process gas that is used in the removal of an undesired substance from a substrate is disclosed herein. In one embodiment, there is provided a process for enhancing the fluorine utilization of a process gas comprising a fluorine source comprising: adding a hydrogen source to the process gas in an amount sufficient to provide a molar ratio ranging from about 0.01 to about 0.99 of hydrogen source to fluorine source.

    摘要翻译： 本文公开了一种用于提高用于从基材中除去不需要的物质的工艺气体的氟利用的方法。 在一个实施方案中，提供了一种用于提高包含氟源的工艺气体的氟利用的方法，包括：向工艺气体中加入足量的氢源以提供约0.01至约0.99的氢 来源于氟源。

    Method for removing titanium dioxide deposits from a reactor
    20.
    发明申请
    Method for removing titanium dioxide deposits from a reactor 失效
    从反应器中除去二氧化钛沉积物的方法

    公开(公告)号：US20050202167A1

    公开(公告)日：2005-09-15

    申请号：US10800880

    申请日：2004-03-15

    申请人： Dingjun Wu ,  Bing Ji ,  Philip Henderson ,  Eugene Karwacki

    发明人： Dingjun Wu ,  Bing Ji ,  Philip Henderson ,  Eugene Karwacki

    IPC分类号： B05D3/02 ,  B08B6/00 ,  C23C16/00

    CPC分类号： C23C16/405 ,  C23C14/083 ,  C23C14/564 ,  C23C16/4405

    摘要： A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

    摘要翻译： 本文公开了用于从用于清洁应用的制品中选择性除去含TiO 2的物质的方法。 在一个实施方案中，提供了从制品中除去含TiO 2的物质的方法，包括：提供其上沉积有含TiO 2的物质的制品; 使物质与包含选自含氟清洗剂，含氯清洗剂及其混合物中的至少一种的反应性气体反应以形成挥发性产物; 并从制品中除去挥发性产物，从而从制品中除去物质。