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公开(公告)号：USRE31806E
公开(公告)日：1985-01-15
申请号：US473304
申请日：1983-03-08
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.
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公开(公告)号：US4293826A
公开(公告)日：1981-10-06
申请号：US34237
申请日：1979-04-30
IPC分类号： H01L31/12 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/0683 , H01S5/18 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4025 , H01S5/02252 , H01S5/005 , H01S5/02284 , H01S5/02292 , H01S5/0683
摘要： A semiconductor injection laser is mounted on a silicon substrate. An optical detector is integral to the substrate and aligned at oblique angles relative to the path of the light from one of the light emitting facets of the laser. The detector may be connected to the current control circuit for the laser to provide a feedback signal which is proportional to the light deflected from the facet. The transversely disposed detector may also function to detect light from another source as part of an optical communication system. The detector may be a Schottky barrier or a p-n junction.
摘要翻译： 半导体注入激光器安装在硅衬底上。 光学检测器与衬底成一体并且相对于来自激光器的一个发光小面的光的路径以倾斜角对准。 检测器可以连接到用于激光器的电流控制电路，以提供与从小面偏转的光成正比的反馈信号。 横向布置的检测器还可以用于检测来自另一个源的光作为光通信系统的一部分。 检测器可以是肖特基势垒或p-n结。
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公开(公告)号：US4219785A
公开(公告)日：1980-08-26
申请号：US918740
申请日：1978-06-26
CPC分类号： H01S5/4068 , H01S5/0425 , H01S5/06243 , H01S5/4075
摘要： A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherent radiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and means associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80 A can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths.
摘要翻译： 一种移动干涉条纹图案类型的光束扫描器，其包括具有相干辐射源的半导体材料体，以及用于沿光学非耦合的多个空间位移路径引导相干辐射的波导，以及与空间相关联的装置 用于在不同路径中的辐射之间产生相对相位变化的偏移路径，由此在远场中的干涉条纹被空间扫描。 此外，可以实现在大约80A范围内的激光器的波长调制。 相干辐射的源可以是单个激光器或多个光学耦合的激光器，并且光学解耦可以通过路径的空间位移或通过在路径之间插入高损耗介质来实现。
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14.发明授权
公开(公告)号：US4185256A
公开(公告)日：1980-01-22
申请号：US869190
申请日：1978-01-13
CPC分类号： H01L33/0025 , H01S5/10 , H01S5/1032 , H01S5/0654 , H01S5/1021 , H01S5/2235 , H01S5/4031
摘要： Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more heterostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.
摘要翻译： 可以通过在制造期间在激光基板上采用台面结构来实现纵向和基本横向模式的模式控制。 台面将提供可以在台面形成的基板上制造的一个或多个异质结构波导层的厚度的显着变化。 结果，每个波导层的等效折射率将是不同的。 对于纵向模式操作，由于在基板上形成的台面的存在，可以在优先LPE生长期间直接制造分支定向耦合器。 对于基本横向模式操作，由于在活性层中存在台面和厚度变化和曲率，振荡可以被限制在波导层中的高增益区域。 连接或并置的条状接触几何形状也可用于在光波导层中提供多腔效应以增强纵向模式选择性。
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公开(公告)号：US4006432A
公开(公告)日：1977-02-01
申请号：US515120
申请日：1974-10-15
CPC分类号： H01S5/187
摘要： A heterojunction diode laser which produces a highly collimated, polarized light beam perpendicular to the plane of the PN junction of the laser rather than through cleaved end faces in the plane of the PN junction. The diode laser includes a periodic structure which is buried at a heterojunction interface and in contact with a light waveguide layer. The periodic structure acts to produce the feedback necessary for lasing. If the spacing of the teeth of the periodic structure are an integer number of wavelengths of the light photons produced in the laser, the light beam exits at an angle perpendicular to the plane of the PN junction. If a tooth spacing is chosen that is not equal to an integer number of wavelengths of the light photons produced in the laser, the light beam may emerge from the diode at an angle other than the normal with the specific angle determined by the particular tooth spacing. To increase output intensity, the ends of the laser perpendicular to the plane of the PN junction and parallel to the teeth of the periodic structure may be cleaved and coated with a highly light reflective film.
摘要翻译： 一种异质结二极管激光器，其产生垂直于激光器PN结的平面的高度准直的偏振光束，而不是通过PN结平面中的裂开的端面。 二极管激光器包括周期性结构，其被埋在异质结界面并与光波导层接触。 周期性结构用于产生激光所需的反馈。 如果周期结构的齿的间隔是在激光器中产生的光子的整数波长，则光束以垂直于PN结的平面的角度射出。 如果选择不等于在激光器中产生的光子的整数波长的齿间隔，则光束可以以除了特定齿间隔所确定的特定角度的法线以外的角度从二极管出射 。 为了增加输出强度，垂直于PN结的平面的激光的端部并且平行于周期性结构的齿可以被切割并涂覆有高度反光的膜。
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公开(公告)号：US3969686A
公开(公告)日：1976-07-13
申请号：US562279
申请日：1975-03-26
CPC分类号： H01S5/12 , H01S5/187 , H01S5/4031 , H01S5/42 , H01S5/1071 , H01S5/4056
摘要： An electrically pumped, distributed feedback laser having all side surfaces of the active laser medium cleaved and a periodic structure at a 45.degree. angle to all of the cleaved surfaces. Current confining channels restrict pumping current to selected regions of the active laser medium to provide sufficient feedback such that two parallel filamentary areas of the active medium lase. By having multiple lasing filaments the divergence of the output beam in the direction of the width of the filaments is reduced by a factor proportional to the number of filamentary lasing areas.
摘要翻译： 一种电泵浦的分布式反馈激光器，其激活的激光介质的所有侧表面都被切割，并且与所有切割的表面成45度角的周期性结构。 电流限制通道将激励电流限制到活性激光介质的选定区域，以提供足够的反馈，使得活性介质的两个平行的丝状区域变薄。 通过具有多个激光丝，输出光束在细丝宽度方向上的发散度减小了与丝状激光区域数目成正比的因子。
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公开(公告)号：US06275632B1
公开(公告)日：2001-08-14
申请号：US09724106
申请日：2000-11-25
申请人： Robert G. Waarts , David F. Welch , Stephen G. Grubb , Jean-Luc Archambault , Steven Sanders , Raymond Zanoni , Donald R. Scifres
发明人： Robert G. Waarts , David F. Welch , Stephen G. Grubb , Jean-Luc Archambault , Steven Sanders , Raymond Zanoni , Donald R. Scifres
IPC分类号： G02B634
CPC分类号： G02B6/29319 , H01S3/067 , H01S3/0675 , H01S3/094015 , H01S3/2383 , H01S3/2391 , H01S3/30 , H01S3/302 , H01S5/146 , H01S5/4012 , H01S5/4025 , H01S5/4031 , H04B10/291
摘要： Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of watts, provided on a single mode or multimode fiber.
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公开(公告)号：US6100546A
公开(公告)日：2000-08-08
申请号：US908766
申请日：1997-08-07
申请人： Jo S. Major , David F. Welch , Donald R. Scifres
发明人： Jo S. Major , David F. Welch , Donald R. Scifres
IPC分类号： C23C16/30 , H01L33/32 , H01S5/323 , H01L33/00 , H01L31/0304
CPC分类号： H01S5/3235 , C23C16/303 , C30B25/02 , C30B29/40 , H01L33/32 , H01S5/32 , H01S5/323 , H01S5/32341 , H01S5/32366 , H01S5/32375
摘要： III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.
摘要翻译： 公开了III-V族氮化物半导体。 III族元素与V族元素组合，包括至少氮和砷，其浓度选择为与市售的晶体基质匹配。 这些III-V晶体的外延生长导致直接的带隙材料，其可以用于诸如发光二极管和激光器的应用中。 改变III-V材料中元素的浓度会改变带隙，从而可以产生跨越可见光谱的光以及中红外和近紫外线发射体的材料。 相反，这种材料可用于产生获得光并将光转换成电的装置，用于诸如全色光电检测器和太阳能收集器的应用。 III-V材料的生长可以通过在导致总体晶格匹配和带隙期望的序列中生长薄层的元素或化合物来实现。
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公开(公告)号：US5337328A
公开(公告)日：1994-08-09
申请号：US97682
申请日：1993-07-27
IPC分类号： H01S5/026 , H01S5/028 , H01S5/10 , H01S5/125 , H01S5/187 , H01S5/20 , H01S5/40 , H01S5/42 , H01S5/50 , H01S3/19
CPC分类号： H01S5/1032 , H01S5/1071 , H01S5/20 , H01S5/423 , H01S5/026 , H01S5/028 , H01S5/1243 , H01S5/125 , H01S5/187 , H01S5/2036 , H01S5/4075 , H01S5/42 , H01S5/50
摘要： A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.
摘要翻译： 半导体激光器包括光栅，该光栅与空腔反射器成角度设置，以沿着至少部分横向定向在空腔内的路径相干地衍射光束。 选择光栅周期和取向，使得沿着路径传播的光束的指定波长将对于在正常入射时撞击端反射器的光共振。 通过将光束的入射角保持在大于45度的光栅上，光栅的反射率最大化，并且所需的光栅周期更大，从而简化了光栅的制造。
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公开(公告)号：US5544184A
公开(公告)日：1996-08-06
申请号：US258521
申请日：1994-06-10
CPC分类号： H01S3/005 , G02B6/4204 , H01S5/02252 , G02B6/4239 , H01S5/005
摘要： A semiconductor laser that includes a monolithic submount with a light emitting source aligned along one side thereby defining a radiation path over which the emitted light propagates. The submount includes two notches that flank the light emitting source. A micro-lens is mounted adjacent to the light emitting source by attaching to the submount with either epoxy or solder. Finally, the components of the semiconductor laser have matching coefficients of thermal expansion so that the optical alignment of the light emitting source and the micro-lens is maintained notwithstanding thermal cycling.
摘要翻译： 一种半导体激光器，其包括具有沿着一侧对准的发光源的单片基座，从而限定发射的光在其上传播的辐射路径。 底座包括位于发光源侧面的两个凹口。 微透镜通过用环氧树脂或焊料附接到底座安装在发光源附近。 最后，半导体激光器的部件具有匹配的热膨胀系数，使得发光源和微透镜的光学取向尽管保持热循环。
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