摘要:
A circuit includes a frequency synthesizer, N phase mixers coupled to the frequency synthesizer, a plurality of receivers, and a calibration circuit. The frequency synthesizer is to receive a reference clock signal and is to output a primary clock signal. A respective phase mixer in the N phase mixers is to output a respective secondary clock signal having a corresponding phase. A respective receiver in the plurality of receivers is coupled to two of the N phase mixers, and at a respective time is to receive data in accordance with the respective secondary clock signal from one of the two phase mixers coupled to the respective receiver. The calibration circuit is to calibrate a secondary clock signal output by a respective phase mixer in the N phase mixers by adjusting the phase of the secondary clock signal of the respective phase mixer.
摘要:
A circuit includes a frequency synthesizer, N phase mixers coupled to the frequency synthesizer, a plurality of receivers, and a calibration circuit. The frequency synthesizer is to receive a reference clock signal and is to output a primary clock signal. A respective phase mixer in the N phase mixers is to output a respective secondary clock signal having a corresponding phase. A respective receiver in the plurality of receivers is coupled to two of the N phase mixers, and at a respective time is to receive data in accordance with the respective secondary clock signal from one of the two phase mixers coupled to the respective receiver. The calibration circuit is to calibrate a secondary clock signal output by a respective phase mixer in the N phase mixers by adjusting the phase of the secondary clock signal of the respective phase mixer.
摘要:
An integrated circuit device (100) includes structures (104) that exhibit performance degradation as a function of use (e.g., accumulated defects within the tunneling oxide of a Flash memory cell, or trapped charge within a charge storage layer) and heating circuitry (101) disposed in proximity to the structures to heat the structures to a temperature that reverses the degradation. The word lines or the bit lines of the memory device are used as heating elements (107).
摘要:
In raised source/drain CMOS processing, the prior art problem of lateral epi growth on the gate stack interfering physically with the raised S/D structures and producing device characteristics that vary along the length of the gate and the problem of overetch of the STI oxide during the preclean step is solved by using a sacrificial nitride layer to block both the STI region and the gate stack, together with a process sequence in which the halo and extension implants are performed after the S/D implant anneal.
摘要:
Doped polysilicon plugs are formed in contact with MOSFET device regions and passing through the buried oxide region into the opposite type silicon substrate of an SOI structure. The polysilicon plugs are in contact with the sources and drains of the MOSFET devices to provide paths for dissipating positive and negative ESD stresses. In addition, the polysilicon plugs provide a thermal dissipation pathway for directing heat away from the circuitry, and provide a diode for the structure.
摘要:
A semiconductor memory device including at least three of the following cell structures: an NVRAM cell structure, an FERAM cell structure, a DRAM cell structure, and an SRAM cell structure. The cell structures are disposed on the same substrate and preferably have gate surfaces which are substantially coplanar. An NVRAM cell structure. Processes for forming a memory structure that includes NVRAM, FERAM, DRAM, and/or SRAM memory structures on one substrate and processes for forming a new NVRAM cell structure.
摘要:
Doped polysilicon plugs are formed in contact with MOSFET device regions and passing through the buried oxide region into the opposite type silicon substrate of an SOI structure. The polysilicon plugs are in contact with the sources and drains of the MOSFET devices to provide paths for dissipating positive and negative ESD stresses. In addition, the polysilicon plugs provide a thermal dissipation pathway for directing heat away from the circuitry, and provide a diode for the structure.
摘要:
A transceiver architecture supports high-speed communication over a signal lane that extends between a high-performance integrated circuit (IC) and one or more relatively low-performance ICs employing less sophisticated transmitters and receivers. The architecture compensates for performance asymmetry between ICs communicating over a bidirectional lane by instantiating relatively complex transmit and receive equalization circuitry on the higher-performance side of the lane. Both the transmit and receive equalization filter coefficients in the higher-performance IC may be adaptively updated based upon the signal response at the receiver of the higher-performance IC.
摘要:
A circuit includes a phase interpolator and a self test circuit. The phase interpolator is to provide a interpolator output having a phase corresponding to a respective phase step in a plurality of phase steps. The interpolator output is a weighted combination of one or more of a plurality of phasor signals. The self test circuit includes a phase detector coupled to a reference signal and the interpolator output, a phase-difference-to-voltage converter coupled to the phase detector, an analog-to-digital converter (ADC) coupled to the phase-difference-to-voltage converter, and control logic. The phase detector is to generate an output that is proportional to a phase difference between the reference signal and the interpolator output. The phase-difference-to-voltage converter is to convert the output from the phase detector into a corresponding voltage. The ADC is to convert an output from the phase-difference-to-voltage converter into a corresponding digital value. The control logic is to test the phase interpolator using the self-test circuit.
摘要:
A semiconductor memory device comprising: an SOI substrate having a thin silicon layer on top of a buried insulator; and an SRAM comprising four NFETs and two PFETs located in the thin silicon layer, each the NFET and PFET having a body region between a source region and a drain region, wherein the bodies of two of the NFETs are electrically connected to ground. Additionally, the bodies of the two PFETs are electrically connected to VDD.