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    IN-SITU ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY
    11.
    发明申请
    IN-SITU ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY 审中-公开
    现场电化学沉积和X射线荧光光谱

    公开(公告)号：US20150212042A1

    公开(公告)日：2015-07-30

    申请号：US14419449

    申请日：2013-08-09

    Applicant: Element Six Technologies Limited

    Inventor： Mark Edward Newton ,  Julie Victoria MacPherson ,  Timothy Peter Mollart

    IPC: G01N27/42 ,  G01N27/27 ,  G01N27/38 ,  G01N23/223 ,  G01N27/30

    CPC classification number: G01N27/42 ,  G01N23/223 ,  G01N27/27 ,  G01N27/30 ,  G01N27/305 ,  G01N27/308 ,  G01N27/38 ,  G01N27/48 ,  G01N27/49 ,  G01N2223/076

    Abstract: A sensor comprising: a first electrode formed of an electrically conductive material and configured to be located in contact which a solution to be analysed; a second electrode configured to be in electrical contact with the solution to be analysed; an electrical controller configured to apply a potential difference between the first and second electrodes to electro-deposit chemical species from the solution onto the first electrode, and an x-ray fluorescence spectrometer configured to perform an x-ray fluorescence spectroscopic analysis technique on the electro-deposited chemical species, the x-ray fluorescence spectrometer comprising an x-ray source configured to direct an x-ray excitation beam to the electro-deposited chemical species on the first electrode and an x-ray detector configured to receive x-rays emitted from the electro-deposited chemical species and generate spectroscopic data about the chemical species electro-deposited on the first electrode, wherein the sensor is configured such that in use the x-ray excitation beam incident on the electro-deposited chemical species on the first electrode is attenuated by no more than 60%.

    Abstract translation: 一种传感器，包括：由导电材料形成的第一电极，并且被配置为与要分析的溶液接触; 构造成与要分析的溶液电接触的第二电极; 电气控制器，被配置为施加所述第一和第二电极之间的电位差以将化学物质从所述溶液电沉积到所述第一电极上;以及x射线荧光光谱仪，被配置为对所述电极进行x射线荧光光谱分析技术 所述X射线荧光光谱仪包括被配置为将x射线激发光束引导到第一电极上的电沉积化学物质的x射线源，以及被配置为接收发射的x射线的x射线检测器 并且产生关于电沉积在第一电极上的化学物质的光谱数据，其中所述传感器被配置为使得在使用中入射到第一电极上的电沉积化学物质上的x射线激发光束 减毒不超过60％。

    ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY
    12.
    发明申请
    ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY 审中-公开
    电化学沉积和X射线荧光光谱

    公开(公告)号：US20150204805A1

    公开(公告)日：2015-07-23

    申请号：US14420753

    申请日：2013-08-09

    Applicant: Element Six Technologies Limited

    Inventor： Mark Edward Newton ,  Julie Victoria MacPherson ,  Timothy Peter Mollart

    IPC: G01N23/223 ,  G01N23/22 ,  G01N27/27

    CPC classification number: G01N23/223 ,  G01N23/2204 ,  G01N27/27 ,  G01N27/30 ,  G01N27/42 ,  G01N27/48 ,  G01N27/49 ,  G01N2223/076

    Abstract: an x-ray fluorescence spectrometer (52); and a sample holder (2) for the x-ray fluorescence (XRF) spectrometer (52), wherein the sample holder (2) comprises: an electrically conductive synthetic diamond electrode (4) providing a front surface (6) on which chemical species can be electro-deposited from a solution (48) comprising the chemical species; an ohmic contact (8) disposed on a rear surface of the electrically conductive synthetic diamond electrode (4); and an electrical connector (10) which is connected to the ohmic contact (8), and wherein the x-ray fluorescence spectrometer (52) comprises: an XRF sample stage (58) configured to receive the sample holder (2); an x-ray source (54) configured to apply an x-ray excitation beam to the chemical species electro-deposited on the electrically conductive synthetic diamond electrode (4) when the sample holder (2) is mounted to the XRF sample stage (58); an x-ray detector (60) configured to receive x-rays emitted from the chemical species electro-deposited on the front surface (6) of the electrically conductive synthetic diamond material when the sample holder (2) is mounted to the XRF sample stage (58); and a processor (62) configured to generate x-ray fluorescence spectroscopic data based on the x-rays received by the x-ray detector. Such system allows to carry out simultaneously and in-situ stripping voltammetry measurements together with X-ray fluorescence measurements.

    Abstract translation: x射线荧光光谱仪（52）; 和用于x射线荧光（XRF）光谱仪（52）的样品架（2），其中样品架（2）包括：导电合成金刚石电极（4），其提供前表面（6） 可以从包含化学物质的溶液（48）电沉积; 设置在导电合成金刚石电极（4）的后表面上的欧姆接触（8）; 以及连接到所述欧姆接触件（8）的电连接器（10），并且其中所述x射线荧光光谱仪（52）包括：XRF样品台（58），构造成接收所述样品架（2）; x射线源（54），被配置为当样品保持器（2）安装到XRF样品台（58）时将X射线激发光束施加到电沉积在导电合成金刚石电极（4）上的化学物质 ）; x射线检测器（60），其构造成当样品保持器（2）安装到XRF样品台时，接收从导电合成金刚石材料的前表面（6）上电沉积的化学物质发射的x射线 （58）; 以及处理器（62），其被配置为基于由所述x射线检测器接收的X射线来生成x射线荧光光谱数据。 这种系统允许同时进行原位溶出伏安法测量以及X射线荧光测量。

    SYNTHETIC DIAMOND MATERIALS FOR ELECTROCHEMICAL SENSING APPLICATIONS
    13.
    发明申请
    SYNTHETIC DIAMOND MATERIALS FOR ELECTROCHEMICAL SENSING APPLICATIONS 审中-公开

    公开(公告)号：US20150102266A1

    公开(公告)日：2015-04-16

    申请号：US14382464

    申请日：2013-03-13

    Applicant: Element Six Technologies Limited

    Inventor： Eleni Bitziou ,  Laura Anne Hutton ,  Julie Victoria MacPherson ,  Mark Edward Newton ,  Patrick Robert Unwin ,  Nicola Louise Palmer ,  Timothy Peter Mollart ,  Joseph Michael Dodson

    IPC: H01B1/04 ,  G01N27/30

    CPC classification number: H01B1/04 ,  G01N27/308

    Abstract: A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionised water and 0.1 M KNO3 as a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm−2; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.4 mA cm−2; a peak-to-peak separation ΔEp (for a macroelectrode) or a quartile potential ΔE3/4—1/4 (for a microelectrode) of no more than 70 mV as measured by sweeping a potential of the boron doped synthetic diamond material at a rate of 100 mV s−1 with respect to a saturated calomel reference electrode in a solution containing only deionised water, 0.1 M KNO3 supporting electrolyte, and 1 mM of FcTMA+ or Ru(NH3)63+ at pH 6; and a capacitance of no more than 10 μF cm−2 as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode between 70 mV and −70 mV in a solution containing only deionised water and 0.1 M KNO3 supporting electrolyte at pH 6, measuring resultant current, subtracting a current value at 0 V when sweeping towards negative potentials from a current value at 0 V when sweeping towards positive potentials, dividing the subtracted current value by 2, and then dividing the result by an area (cm2) of the boron doped synthetic diamond material and by a rate at which the potential is swept (Vs−1) to give a value for capacitance in F cm−2.

    SYNTHETIC DIAMOND COATED COMPOUND SEMICONDUCTOR SUBSTRATES
    14.
    发明申请
    SYNTHETIC DIAMOND COATED COMPOUND SEMICONDUCTOR SUBSTRATES 有权
    合成金刚石涂层化合物半导体基板

    公开(公告)号：US20140339684A1

    公开(公告)日：2014-11-20

    申请号：US14362843

    申请日：2012-12-12

    Applicant: Element Six Technologies Limited

    Inventor： Timothy Peter Mollart

    IPC: H01L21/02 ,  H01L23/373

    CPC classification number: H01L21/02115 ,  C23C16/271 ,  C23C16/274 ,  C23C16/4585 ,  C30B25/10 ,  C30B25/183 ,  C30B29/04 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02447 ,  H01L21/02527 ,  H01L21/0262 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising: loading a composite substrate into a chemical vapour deposition (CVD) reactor, the composite substrate comprising a single crystal carrier wafer, a layer of single crystal compound semiconductor epitaxially grown on the carrier wafer, and an interface layer disposed on the layer of compound semiconductor, the interface layer forming a growth surface suitable for growth of synthetic diamond material thereon via a CVD technique; and growing a layer of CVD diamond material on the growth surface of the interface layer, wherein during growth of CVD diamond material a temperature difference at the growth surface between an edge and a centre point thereof is maintained to be no more than 80° C., and wherein the carrier wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100.

    Abstract translation: 一种制造合成金刚石涂覆的化合物半导体衬底的方法，所述方法包括：将复合衬底装载到化学气相沉积（CVD）反应器中，所述复合衬底包括单晶载体晶片，外延生长在单晶化合物半导体层上 载体晶片和设置在化合物半导体层上的界面层，界面层通过CVD技术形成适于在其上生长合成金刚石材料的生长表面; 并且在界面层的生长表面上生长一层CVD金刚石材料，其中在CVD金刚石材料生长期间，其边缘和中心点之间的生长表面处的温度差保持在不超过80℃。 ，并且其中所述载体晶片具有不小于0.25 / 100的由厚度与宽度的比定义的纵横比。

    Boron doped diamond based electrochemical sensor heads
    16.
    发明授权
    Boron doped diamond based electrochemical sensor heads 有权

    公开(公告)号：US11209379B2

    公开(公告)日：2021-12-28

    申请号：US15527550

    申请日：2015-11-20

    Applicant: Element Six Technologies Limited

    Inventor： Laura Anne Hutton ,  Maxim Bruckshaw Joseph ,  Roy Edward Patrick Meyler ,  Julie Victoria Macpherson ,  Timothy Peter Mollart ,  Zoe Ayers

    IPC: G01N27/30

    Abstract: An electrochemical sensor comprising: a boron doped diamond electrode formed of boron doped diamond material; an array of non-diamond carbon sites disposed on a sensing surface of the boron doped diamond electrode; electrochemically active surface groups bonded to the non-diamond carbon sites for generating a redox peak associated with a target species which reacts with the electrochemically active surface groups bonded to the non-diamond carbon sites when a solution containing the target species is disposed in contact with the sensing surface in use; an electrical controller configured to scan the boron doped diamond electrode over a potential range to generate said redox peak; and a processor configured to give an electrochemical reading based on one or both of a position and an intensity of said redox peak.

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