公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20170288073A1

公开(公告)日：2017-10-05

申请号：US15619674

申请日：2017-06-12

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

CPC classification number: H01L31/022425 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：US20170271533A1

公开(公告)日：2017-09-21

申请号：US15612078

申请日：2017-06-02

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US20140261689A1

公开(公告)日：2014-09-18

申请号：US14211398

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Dan Damjanovic ,  Jing Guo ,  David Hwang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022483 ,  H01L31/073 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed, the device having a zinc-containing layer, such as a ZnO1-xSx layer, as a window layer, as part of a composite window layer, and/or as a buffer layer. Use of the ZnO1-xSx layer improves an overall efficiency of the photovoltaic device due to improved optical transmission thereof as compared to CdS window layers, and due to a improved quantum efficiency of the photovoltaic device in the blue light spectrum due to the presence of the ZnO1-xSx layer.

Abstract translation: 公开了一种光电器件，该器件具有诸如ZnO1-xSx层的含锌层，作为窗口层，作为复合窗口层的一部分，和/或作为缓冲层。 与CdS窗层相比，ZnO1-xSx层的使用改善了光电器件的整体效率，并且由于光电子器件在蓝光光谱中的量子效率提高，由于存在 ZnO1-xSx层。

公开(公告)号：US20140185061A1

公开(公告)日：2014-07-03

申请号：US14133916

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  David Hwang ,  Benjamin Milliron ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: G01B11/06

CPC classification number: G01B11/0616 ,  G01B11/0625 ,  H02S50/10

Abstract: A method and system for real-time, in-line measurements of thicknesses of semiconductor layers of photovoltaic devices is provided. The method and system include taking ex-situ optical data measurements after deposition of the semiconductor layers. The measurements are then used to calculate the thicknesses of the layers in real-time using optical modeling software.

Abstract translation: 提供了一种用于对光伏器件的半导体层的厚度进行实时在线测量的方法和系统。 该方法和系统包括在沉积半导体层之后进行非原位光学数据测量。 然后使用光学建模软件实时测量各层的厚度。

公开(公告)号：US20130200234A1

公开(公告)日：2013-08-08

申请号：US13759846

申请日：2013-02-05

Applicant: First Solar, Inc.

Inventor： Zhibo Zhao ,  Benyamin Buller ,  David Hwang ,  Dmitriy Marinskiy ,  Muhammad Khatri ,  Zhengjue Zhang ,  Allan Ward, III

IPC: H01L31/042 ,  B23P19/00

CPC classification number: B23P19/00 ,  F24S25/37 ,  F24S25/634 ,  F24S2025/6003 ,  H01L31/18 ,  H02S20/00 ,  H02S40/36 ,  Y02E10/47 ,  Y02E10/50 ,  Y10T29/49826

Abstract: Disclosed are photovoltaic module mounting assemblies with mounting clamps for connecting multiple photovoltaic modules into a photovoltaic array. One embodiment of the mounting assembly includes mounting clamps that are positioned on the mounting assembly parallel to the scribe lines of the module. Another embodiment of the mounting assembly uses mounting clamps that are configured to hold a portion of the module at a predetermined distance away from the photovoltaic cells of the module.

Abstract translation: 公开了具有用于将多个光伏模块连接到光伏阵列中的安装夹具的光伏模块安装组件。 安装组件的一个实施例包括安装夹具，其平行于模块的划线定位在安装组件上。 安装组件的另一实施例使用安装夹具，其被配置为将模块的一部分保持在远离模块的光伏电池的预定距离处。

公开(公告)号：US20240138164A1

公开(公告)日：2024-04-25

申请号：US18277157

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

CPC classification number: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

公开(公告)号：US20240138163A1

公开(公告)日：2024-04-25

申请号：US18277153

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Mengjin Yang ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/86 ,  H10K30/40

CPC classification number: H10K30/86 ,  H10K30/40 ,  H10K85/50

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.