公开(公告)号：US20240392214A1

公开(公告)日：2024-11-28

申请号：US18792828

申请日：2024-08-02

Applicant: FUJIFILM Corporation

Inventor： Naotsugu MURO ,  Tadashi INABA ,  Tetsuya KAMIMURA

IPC: C11D3/20 ,  C11D3/00 ,  C11D3/30 ,  C11D3/36 ,  C11D3/43 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

Abstract: An object of the present invention is to provide a composition in which, even in a case of being used after a lapse of a predetermined period from production, removal performance of residues and anticorrosion properties of a tungsten-containing film are excellent, and deterioration of electrical properties of the tungsten-containing film can be suppressed; and to provide a manufacturing method of a semiconductor element.
The composition of the present invention contains sorbic acid, citric acid, an amine-containing compound which is at least one selected from the group consisting of ammonia, an organic amine, a quaternary ammonium compound, and salts thereof, a specific compound which has at least one group selected from the group consisting of a phosphono group and a phosphoric acid group, and water, in which a pH at 25° C. is 4.0 to 9.0.

公开(公告)号：US20240067901A1

公开(公告)日：2024-02-29

申请号：US18492224

申请日：2023-10-23

Applicant: FUJIFILM Corporation

Inventor： Naotsugu MURO ,  Tadashi INABA ,  Tetsuya KAMIMURA

IPC: C11D3/20 ,  C11D3/34 ,  C11D3/36 ,  C11D11/00

CPC classification number: C11D3/2082 ,  C11D3/3409 ,  C11D3/361 ,  C11D11/0047

Abstract: An object of the present invention is to provide a cleaning composition which has excellent removability of a residue (particularly, a residue after CMP) and excellent anticorrosion properties of copper; a cleaning method of a semiconductor substrate; and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains citric acid, 1-hydroxyethane-1,1-diphosphonic acid, a sulfonic acid-based surfactant, and water, in which a mass ratio of a content of the citric acid to a content of the 1-hydroxyethane-1,1-diphosphonic acid is 20 to 150, a mass ratio of the content of the citric acid to a content of the sulfonic acid-based surfactant is 70 to 1,500, and a pH is 0.10 to 4.00.

公开(公告)号：US20170309492A1

公开(公告)日：2017-10-26

申请号：US15647351

申请日：2017-07-12

Applicant: FUJIFILM Corporation

Inventor： Satomi TAKAHASHI ,  Seongmu BAK ,  Atsushi MIZUTANI ,  Tadashi INABA

IPC: H01L21/304 ,  C22B58/00 ,  C22B30/04 ,  C07C321/26 ,  C07C321/22 ,  H01L21/308 ,  C07C321/04

CPC classification number: H01L21/304 ,  C07C321/04 ,  C07C321/22 ,  C07C321/26 ,  C07C323/12 ,  C07C323/52 ,  C07C323/58 ,  C07D213/70 ,  C07D239/40 ,  C07D249/12 ,  C22B30/04 ,  C22B58/00 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/3081 ,  H01L21/31111 ,  Y02P20/582

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

公开(公告)号：US20150087156A1

公开(公告)日：2015-03-26

申请号：US14558838

申请日：2014-12-03

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tadashi INABA ,  Naotsugu MURO ,  Yoshinori NISHIWAKI

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/30604 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/00 ,  C23F1/02 ,  C23F1/14 ,  C23F1/26 ,  C23F1/38 ,  C23F1/44 ,  C23G1/106 ,  C23G1/205 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/6704

Abstract: A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.

Abstract translation: 一种蚀刻半导体衬底的方法，具有以下步骤：通过将第一液体与第二液体混合在pH为8.5至14的范围内来制备蚀刻液体，所述第一液体含有碱性化合物，所述第二液体含有 氧化剂; 然后及时将蚀刻液施加到半导体衬底上，以蚀刻半导体衬底中或其上的含Ti层。