公开(公告)号：US20180006229A1

公开(公告)日：2018-01-04

申请号：US15696194

申请日：2017-09-06

Applicant: FUJIFILM CORPORATION

Inventor： Tetsu KITAMURA ,  Yosuke YAMAMOTO ,  Fumiko TAMAKUNI ,  Yuta SHIGENOI ,  Takashi GOTO ,  Tetsuya WATANABE

IPC: H01L51/00 ,  C08G61/12 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/314 ,  C08G2261/3222 ,  C08G2261/3223 ,  C08G2261/3225 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3245 ,  C08G2261/3246 ,  C08G2261/334 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/512 ,  C08G2261/514 ,  C08G2261/59 ,  C08G2261/592 ,  C08L65/00 ,  C09D165/00 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/05 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0566 ,  C08L25/02

Abstract: Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A  (1)

公开(公告)号：US20240228876A1

公开(公告)日：2024-07-11

申请号：US18603578

申请日：2024-03-13

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi Mizutani ,  Tomonori Takahashi

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30604

Abstract: An object of the present invention is to provide a treatment liquid for producing a semiconductor, which is capable of selectively removing Si in a case of being applied to an object to be treated containing SiGe and Si. The treatment liquid for manufacturing a semiconductor according to the present invention includes: a nitrogen-containing polymer; a quaternary ammonium hydroxide; an organic solvent having an SP value of 25 MPa1/2 or more; and water. Polyalkyleneimine is excluded from the nitrogen-containing polymer.

公开(公告)号：US20230416605A1

公开(公告)日：2023-12-28

申请号：US18462804

申请日：2023-09-07

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi MIZUTANI ,  Tomonori TAKAHASHI

IPC: C09K13/00 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/31111 ,  H01L21/32134

Abstract: Provided is a chemical liquid that has an excellent etching ability for an Al oxide on a substrate and excellent etching selectivity between Al oxide and a specific metal oxide. Also provided is a treatment method using the chemical liquid. The chemical liquid contains at least one hydroxy acid selected from the group consisting of a hydroxy acid and a salt thereof, a quaternary ammonium compound, a trialkylamine, and water, and is alkaline.

公开(公告)号：US20230112048A1

公开(公告)日：2023-04-13

申请号：US17895534

申请日：2022-08-25

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Yuta SHIGENOI

IPC: C09K13/06 ,  H01L21/311

Abstract: A chemical liquid contains phosphoric acid or a salt thereof, a polar aprotic solvent, water, and a compound that has a carboxy group and does not have a hydroxyl group or a salt of the compound, in which a content of the phosphoric acid or a salt thereof is 5.0% by mass or less with respect to a total mass of the chemical liquid, a content of the polar aprotic solvent is 50.0% by mass or more with respect to the total mass of the chemical liquid, and a content of the water is 2.0% by mass or more and less than 50.0% by mass with respect to the total mass of the chemical liquid.

公开(公告)号：US20170170399A1

公开(公告)日：2017-06-15

申请号：US15444330

申请日：2017-02-28

Applicant: FUJIFILM CORPORATION

Inventor： Kensuke MASUI ,  Toshihiro KARIYA ,  Yushi HONGO ,  Yuta SHIGENOI

IPC: H01L51/00 ,  C09D11/108 ,  C09D11/03 ,  C09D11/52 ,  C09D11/38

CPC classification number: H01L51/0035 ,  C08L101/00 ,  C09D11/03 ,  C09D11/10 ,  C09D11/108 ,  C09D11/36 ,  C09D11/38 ,  C09D11/52 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/05 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566

Abstract: An object of the present invention is to provide a composition for forming an organic semiconductor film that makes it possible to obtain an organic semiconductor film having excellent mobility and heat stability, an organic semiconductor element including an organic semiconductor film having excellent mobility and heat stability, and a method for manufacturing the organic semiconductor element.The composition for forming an organic semiconductor film of the present invention contains a specific organic semiconductor as a component A, a binder polymer as a component B, a solvent having a naphthalene structure as a component C, and a solvent having a lower SP value than that of the component C by 2.0 MPa1/2 or greater and a lower boiling point than that of the component C, as a component D.

公开(公告)号：US20170125694A1

公开(公告)日：2017-05-04

申请号：US15408419

申请日：2017-01-18

Applicant: FUJIFILM CORPORATION

Inventor： Yuta SHIGENOI ,  Kensuke MASUI

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0071 ,  H01L51/0007 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/0545 ,  H01L51/0558

Abstract: An object of the present invention is to provide an organic semiconductor composition from which an organic semiconductor having excellent mobility and temporal stability is obtained, and an organic semiconductor element having an organic semiconductor formed of the organic semiconductor composition.An organic semiconductor composition of the present invention includes an organic semiconductor which has a condensed polycyclic aromatic group having 4 or more rings, among which 2 or more rings contain at least one atom selected from the group consisting of a sulfur atom, a nitrogen atom, a selenium atom, and an oxygen atom, and has a structure selected from the group consisting of a benzene ring, a naphthalene ring, and a phenanthrene ring as a partial structure in the condensed polycyclic aromatic group, an organic solvent A, an organic solvent B, and a surfactant having an organic siloxane moiety represented by —O—SiR1R2, and in a case where an SP value of the organic solvent A is denoted by SP(A) and an SP value of the organic solvent B is denoted by SP(B), SP(B)−SP(A)≧2 MPa1/2 is satisfied.