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公开(公告)号:US20150344738A1
公开(公告)日:2015-12-03
申请号:US14440208
申请日:2013-10-29
Applicant: FUJIMI INCORPORATED
Inventor: Shogo ONISHI , Yasuto ISHIDA , Tatsuhiko HIRANO
IPC: C09G1/02 , H01L21/321
CPC classification number: B24B37/044 , C09G1/02 , C09K3/1445 , C09K3/1463 , H01L21/3212
Abstract: [Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate.[Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.
Abstract translation: [问题]提供一种抛光组合物,其适用于抛光具有金属布线层的抛光对象,并且能够在保持高抛光速率的同时减少台阶缺陷。 [解决方案]提供一种抛光组合物,其用于抛光具有金属布线层的抛光对象,该金属布线层含有金属腐蚀抑制剂,络合剂,表面活性剂和水,并且其中抛光后抛光对象表面的固体表面能 使用研磨用组合物的研磨对象为30mN / m以下,表面活性剂优选为阴离子表面活性剂。
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公开(公告)号:US20220325140A1
公开(公告)日:2022-10-13
申请号:US17707003
申请日:2022-03-29
Applicant: Fujimi Incorporated
Inventor: Tsutomu YOSHINO , Yoshihiro IZAWA , Yasuto ISHIDA
IPC: C09G1/16 , H01L21/306
Abstract: Provided is a means capable of sufficiently removing residues remaining on a surface of a polished object. Provided is a composition for surface treatment for use in reducing a residue on a surface of a polished object, containing a solvent and a water-soluble polymer, wherein an adsorption amount of the water-soluble polymer adsorbed to a quartz crystal microbalance electrode is 100 ng/cm2 or more and 600 ng/cm2 or less per unit area of the quartz crystal microbalance electrode.
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公开(公告)号:US20210071111A1
公开(公告)日:2021-03-11
申请号:US17011371
申请日:2020-09-03
Applicant: FUJIMI INCORPORATED
Inventor: Tsutomu YOSHINO , Shogo ONISHI , Yasuto ISHIDA
IPC: C11D3/37 , C11D1/00 , C11D11/00 , B08B1/00 , B08B3/08 , H01L21/02 , H01L21/3105 , H01L21/321
Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.
A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.-
公开(公告)号:US20210005462A1
公开(公告)日:2021-01-07
申请号:US16977522
申请日:2019-01-21
Applicant: FUJIMI INCORPORATED
Inventor: Tsutomu YOSHINO , Ayano YAMAZAKI , Shogo ONISHI , Yasuto ISHIDA
IPC: H01L21/306 , C09G1/02 , C09K3/14
Abstract: The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished.
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公开(公告)号:US20200308449A1
公开(公告)日:2020-10-01
申请号:US16797177
申请日:2020-02-21
Applicant: FUJIMI INCORPORATED
Inventor: Ryota MAE , Tsutomu YOSHINO , Shogo ONISHI , Hirofumi IKAWA , Yasuto ISHIDA
IPC: C09G1/02
Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.
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公开(公告)号:US20200299543A1
公开(公告)日:2020-09-24
申请号:US16086191
申请日:2017-03-09
Applicant: FUJIMI INCORPORATED
Inventor: Yasuto ISHIDA
Abstract: Provided is a polishing composition which can sufficiently remove defects remaining on the surface of a polished object and which can make the polishing speeds of the respective materials substantially equal to each other when polishing the object to be polished containing a plurality of materials.A polishing composition used for polishing an object to be polished containing a material having a silicon-silicon bond, a material having a silicon-nitrogen bond, and a material having a silicon-oxygen bond, the polishing composition including: organic acid surface-immobilized silica particles; a wetting agent; and a polishing speed inhibitor for the material having a silicon-silicon bond, wherein the polishing composition has a pH of less than 7.
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公开(公告)号:US20170298253A1
公开(公告)日:2017-10-19
申请号:US15514130
申请日:2015-08-28
Applicant: FUJIMI INCORPORATED
Inventor: Yasuto ISHIDA
IPC: C09G1/02 , B24B37/04 , C09K3/14 , H01L21/321
CPC classification number: C09G1/02 , B24B37/044 , C09K3/1436 , H01L21/31053 , H01L21/3212
Abstract: There are provided a polishing composition and a method for polishing capable of, when a substrate including polysilicon is polished, limiting the polishing rate of the polysilicon, and selectively polishing a silicon compound other than the polysilicon, such as silicon nitride. The polishing composition used includes abrasives, an organic acid and a conjugate base of the organic acid.
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