公开(公告)号：US20150344738A1

公开(公告)日：2015-12-03

申请号：US14440208

申请日：2013-10-29

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Yasuto ISHIDA ,  Tatsuhiko HIRANO

IPC: C09G1/02 ,  H01L21/321

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/3212

Abstract: [Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate.[Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.

Abstract translation: [问题]提供一种抛光组合物，其适用于抛光具有金属布线层的抛光对象，并且能够在保持高抛光速率的同时减少台阶缺陷。 [解决方案]提供一种抛光组合物，其用于抛光具有金属布线层的抛光对象，该金属布线层含有金属腐蚀抑制剂，络合剂，表面活性剂和水，并且其中抛光后抛光对象表面的固体表面能 使用研磨用组合物的研磨对象为30mN / m以下，表面活性剂优选为阴离子表面活性剂。

公开(公告)号：US20220325140A1

公开(公告)日：2022-10-13

申请号：US17707003

申请日：2022-03-29

Applicant: Fujimi Incorporated

Inventor： Tsutomu YOSHINO ,  Yoshihiro IZAWA ,  Yasuto ISHIDA

IPC: C09G1/16 ,  H01L21/306

Abstract: Provided is a means capable of sufficiently removing residues remaining on a surface of a polished object. Provided is a composition for surface treatment for use in reducing a residue on a surface of a polished object, containing a solvent and a water-soluble polymer, wherein an adsorption amount of the water-soluble polymer adsorbed to a quartz crystal microbalance electrode is 100 ng/cm2 or more and 600 ng/cm2 or less per unit area of the quartz crystal microbalance electrode.

公开(公告)号：US20210071111A1

公开(公告)日：2021-03-11

申请号：US17011371

申请日：2020-09-03

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu YOSHINO ,  Shogo ONISHI ,  Yasuto ISHIDA

IPC: C11D3/37 ,  C11D1/00 ,  C11D11/00 ,  B08B1/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.
A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

公开(公告)号：US20210005462A1

公开(公告)日：2021-01-07

申请号：US16977522

申请日：2019-01-21

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu YOSHINO ,  Ayano YAMAZAKI ,  Shogo ONISHI ,  Yasuto ISHIDA

IPC: H01L21/306 ,  C09G1/02 ,  C09K3/14

Abstract: The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished.

公开(公告)号：US20200308449A1

公开(公告)日：2020-10-01

申请号：US16797177

申请日：2020-02-21

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Tsutomu YOSHINO ,  Shogo ONISHI ,  Hirofumi IKAWA ,  Yasuto ISHIDA

IPC: C09G1/02

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

公开(公告)号：US20200299543A1

公开(公告)日：2020-09-24

申请号：US16086191

申请日：2017-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto ISHIDA

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14

Abstract: Provided is a polishing composition which can sufficiently remove defects remaining on the surface of a polished object and which can make the polishing speeds of the respective materials substantially equal to each other when polishing the object to be polished containing a plurality of materials.A polishing composition used for polishing an object to be polished containing a material having a silicon-silicon bond, a material having a silicon-nitrogen bond, and a material having a silicon-oxygen bond, the polishing composition including: organic acid surface-immobilized silica particles; a wetting agent; and a polishing speed inhibitor for the material having a silicon-silicon bond, wherein the polishing composition has a pH of less than 7.

公开(公告)号：US20170298253A1

公开(公告)日：2017-10-19

申请号：US15514130

申请日：2015-08-28

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto ISHIDA

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  H01L21/31053 ,  H01L21/3212

Abstract: There are provided a polishing composition and a method for polishing capable of, when a substrate including polysilicon is polished, limiting the polishing rate of the polysilicon, and selectively polishing a silicon compound other than the polysilicon, such as silicon nitride. The polishing composition used includes abrasives, an organic acid and a conjugate base of the organic acid.