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    Fast programming memory device
    14.
    发明授权
    Fast programming memory device 有权
    快速编程存储设备

    公开(公告)号：US08018771B2

    公开(公告)日：2011-09-13

    申请号：US12123359

    申请日：2008-05-19

    申请人： Marco Maccarrone ,  Giuseppe Giannini ,  Demetrio Pellicone

    发明人： Marco Maccarrone ,  Giuseppe Giannini ,  Demetrio Pellicone

    IPC分类号： G11C365/04

    CPC分类号： G11C16/10 ,  G06F1/28 ,  G06F3/0619 ,  G06F3/0625 ,  G06F3/0653 ,  G06F3/0688 ,  G06F12/0802 ,  G06F13/4282 ,  G06F2212/222 ,  G06F2213/0032 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/26 ,  G11C16/28 ,  G11C16/30 ,  Y02D10/14 ,  Y02D10/151

    摘要： In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one including at least two serially-connected memory cells, groups of at least two memory cells strings being connected to a respective bit line, and wherein said memory cells are adapted to be programmed into at least a first programming state and a second programming state, a method of storing data comprising exploiting a single memory cell for each of the memory cells string for writing the data, wherein said exploiting includes bringing the single memory cell to the second programming state, the remaining memory cells of the string being left in the first programming state.

    摘要翻译： 在包括存储器单元矩阵的存储器件的实施例中，其中存储器单元布置在多个存储器单元串中，每个存储单元串包括至少两个串联的存储器单元，至少两个存储器单元串的组被连接到 并且其中所述存储器单元适于被编程为至少第一编程状态和第二编程状态，存储数据的方法包括利用用于写入数据的每个存储器单元串的单个存储器单元， 其中所述利用包括使单个存储器单元进入第二编程状态，所述串的剩余存储单元保持在第一编程状态。

    Semiconductor memory with access protection scheme
    17.
    发明授权
    Semiconductor memory with access protection scheme 有权
    半导体存储器具有访问保护方案

    公开(公告)号：US07249231B2

    公开(公告)日：2007-07-24

    申请号：US10781974

    申请日：2004-02-18

    申请人： Irene Babudri ,  Stefano Ghezzi ,  Giuseppe Giannini ,  Ruggero DeLuca

    发明人： Irene Babudri ,  Stefano Ghezzi ,  Giuseppe Giannini ,  Ruggero DeLuca

    IPC分类号： G06F12/00

    CPC分类号： G06F12/1425

    摘要： A memory, particularly but not limitatively a flash memory, comprises at least one data storage area comprising a plurality of data storage locations, and an access circuitry for accessing the data storage locations for either retrieving or altering a data content thereof, depending for example on a memory user request. The memory includes at least one first user-configurable flag element and a second user-configurable flag element. Both the at least one first and the second flag elements are used by a user to set a protected state of the respective data storage area against alteration of the content of the data storage locations thereof. The protected state defined by setting the first flag element is user-removable, i.e., it can be removed by request from the user, so as to enable again the alteration of the content of the data storage area. On the contrary, the protected state defined by setting the second flag element is permanent and, once set, it cannot be removed: the data storage area becomes unalterable.

    摘要翻译： 存储器，特别地但不限于闪速存储器，包括至少一个包括多个数据存储位置的数据存储区域，以及用于访问数据存储位置以用于检索或更改其数据内容的访问电路，这取决于例如 内存用户请求。 存储器包括至少一个第一用户可配置标志元件和第二用户可配置标志元件。 所述至少一个第一和第二标志元素都由用户用于设置相应数据存储区域的受保护状态以防其数据存储位置的内容的改变。 通过设置第一标志元素定义的受保护状态是用户可移除的，即，可以通过来自用户的请求去除它，以便再次启用数据存储区域的内容的改变。 相反，通过设置第二标志元素定义的受保护状态是永久性的，一旦设置，就不能被去除：数据存储区域变得不可更改。