摘要:
A method and apparatus for biasing an open ended bus line to a predetermined voltage just prior to the arrival of a data signal. The bias on the bus line is used to move the voltage of a received data signal closer to trip points used to determine the logical value of the data signals. The equilibration circuit may be are enabled by a clock signal derived from a sense amplifier clock signal to ensure that the bias voltage is applied to the bus line just prior to the arrival of the data signal.
摘要:
An SDRAM is initialized with an initialization pulse generated in response to a load mode register command that is generated to program a mode register in the SDRAM. Antifuse circuits are read and registers are initialized according to the initialization pulse each time the mode register is programmed. The mode register is programmed in a boot up procedure and in subsequent reboot procedures of a computer system including the SDRAM.
摘要:
A delay is introduced into the output path of a synchronous device in response to a rising supply voltage. Specifically, as its supply voltage rises, a synchronous memory device may operate too quickly, particularly data output. To slow the rate at which the memory device outputs data, the clock which controls the data output rate is delayed by an amount correlative to the magnitude of the supply voltage.
摘要:
A unique latch circuitry having both a latching and margin testing capability is provided. Every antifuse in a memory circuit is connected to a respective latch circuit. The latch circuits utilize a global input signal to configure a reference impedance with either a normal operational mode impedance or a test mode impedance. Once configured, and without any other additional circuitry, the latch circuits are capable of performing the latching or testing capability based upon comparisons to the reference impedance. When configured for the normal operational mode, the latch circuits read and output the status of their respective antifuses responsive to a control signal. When configured for the testing mode, the latch circuits test the impedance margin of their respective antifuses responsive to the same control signal. The configuration of the unique latch circuit, and the use of the same control signal for normal and test modes, allows for the global testing of all of the antifuses in a memory circuit while reducing the circuitry required to perform the testing. In addition, it is also possible to have different reference impedances for the normal and test modes.
摘要:
A test system is added to a substrate and a test mode of operation is added to the timing and control functions of a system on the substrate. When a multifunctional system on the substrate is tested, a first functional subsystem is connected to an external tester. The tester causes the timing and control system to enter the test mode of operation. When in the test mode of operation, the test system provides a signal derived from a signal generator on the substrate. The generated signal is coupled to a second functional subsystem so that functional independence of the first and second subsystems can be verified.
摘要:
A sensing system can read from a memory cell configured to store a data bit and to produce a differential signal indicating a data state of the memory cell. The data state can be selected from three data states. An example of the system can include a pair of bit lines, a pair of sense amplifiers (SAs), and a data output circuit. The bit lines are coupled to the memory cell to receive the differential signal. The SAs are each independently coupled to the bit lines through an isolation circuit. The data output circuit can receive outputs from the SAs and indicate the data state of the memory cell based on the outputs.
摘要:
Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period.
摘要:
Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period.
摘要:
Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period.
摘要:
Memory devices configured to reduce coupling noise between adjacent wordlines in a memory array. More specifically, wordline drivers are interleaved such that adjacent wordlines are driven by wordline drivers enabled by different row decoders. Each wordline driver includes a weak transistor to ground and a strong transistor to ground. By disabling the wordline driver on the wordlines directly adjacent to the active wordlines, a path is provided to drive the coupling noise from the active wordline to ground through the strong transistor.