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公开(公告)号：US20150361337A1
公开(公告)日：2015-12-17
申请号：US14549847
申请日：2014-11-21
Applicant: GENERAL ELECTRIC COMPANY
Inventor： James Edward Murphy , Florencio Garcia , Ashfaqul Islam Chowdhury , Srinivas Prasad Sista , Anant Achyut Setlur
CPC classification number: C09K11/617 , C09K11/7774 , H01L33/502 , H01L33/507 , H01L33/54 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00012
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the color stable Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and amount of Mn ranges from about 0.9 wt % to about 4 wt %, based on total weight.
Abstract translation: 合成Mn4 +掺杂荧光体的方法包括使式I的前体在升高的温度下与气态的含氟氧化剂接触以形成颜色稳定的Mn4 +掺杂荧光体; 其中A为Li，Na，K，Rb，Cs或其组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y为5,6或7; 并且Mn的量基于总重量为约0.9重量％至约4重量％。
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公开(公告)号：US09567516B2
公开(公告)日：2017-02-14
申请号：US14303020
申请日：2014-06-12
Applicant: General Electric Company
Inventor： James Edward Murphy , Anant Achyut Setlur , Florencio Garcia , Srinivas Prasad Sista
CPC classification number: C09K11/616 , C09K11/617 , F21K9/60 , F21V9/30 , H01L33/502 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00012
Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+ (I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract translation: 用于合成锰（Mn4 +）掺杂荧光体的方法包括研磨式I的荧光体前体的研磨颗粒，并且在升高的温度下将碾磨的颗粒与含氟氧化剂接触。[MFy]：Mn4 +（I）其中A 是Li，Na，K，Rb，Cs或它们的组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号：US09371481B2
公开(公告)日：2016-06-21
申请号：US14302907
申请日：2014-06-12
Applicant: GENERAL ELECTRIC COMPANY
Inventor： Florencio Garcia , Anant Achyut Setlur , James Edward Murphy , Srinivas Prasad Sista
CPC classification number: C09K11/617 , C09K11/616 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H05B33/12 , H01L2924/00012
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax[MFy]:Mn4+ I at any temperature in a range from about 200° C. to about 700° C. with a fluorine-containing oxidizing agent in gaseous form; maintaining the temperature during a contact period of at least one hour; and, after the contact period, reducing the temperature at a rate of ≦5° C. per minute; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract translation: 用于合成Mn4 +掺杂荧光体的方法包括在约200℃至约700℃的任何温度下将含有式I的前体Ax [MFy]：Mn4 + I与气态的含氟氧化剂 形成; 在接触期间保持至少1小时的温度; 并且在接触期后以每分钟5℃的速度降低温度; 其中A为Li，Na，K，Rb，Cs或其组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号：US20160115382A1
公开(公告)日：2016-04-28
申请号：US14950644
申请日：2015-11-24
Applicant: GENERAL ELECTRIC COMPANY
Inventor： Fangming Du , William Winder Beers , William Erwin Cohen , Clark David Nelson , Jenna Marie Novak , John Matthew Root , James Edward Murphy , Srinivas Prasad Sista
CPC classification number: C09K11/617 , H01L33/00 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4 I includes gradually adding a first solution to a second solution and periodically discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.
Abstract translation: 制备式I的掺杂Mn + 4的磷光体的方法Ax [MFy]：Mn + 4I包括逐渐向第二溶液中加入第一溶液并且周期性地从反应器中排出产物液体，同时反应器中产物液体的体积 保持不变; 其中A为Li，Na，K，Rb，Cs或其组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y为5,6或7.第一溶液包括M和HF源，第二溶液在A源的存在下包含Mn的反应器源。
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Patent Agency Ranking
公开(公告)号：US20150361336A1
公开(公告)日：2015-12-17
申请号：US14302907
申请日：2014-06-12
Applicant: GENERAL ELECTRIC COMPANY
Inventor： Florencio Garcia , Anant Achyut Setlur , James Edward Murphy , Srinivas Prasad Sista
CPC classification number: C09K11/617 , C09K11/616 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H05B33/12 , H01L2924/00012
Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax[MFy]:Mn4+ I at any temperature in a range from about 200° C. to about 700° C. with a fluorine-containing oxidizing agent in gaseous form; maintaining the temperature during a contact period of at least one hour; and, after the contact period, reducing the temperature at a rate of ≦5° C. per minute; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract translation: 用于合成Mn4 +掺杂荧光体的方法包括在约200℃至约700℃的任何温度下将含有式I的前体Ax [MFy]：Mn4 + I与气态的含氟氧化剂 形成; 在接触期间保持至少1小时的温度; 并且在接触期后以每分钟5℃的速度降低温度; 其中A为Li，Na，K，Rb，Cs或其组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号：US10230022B2
公开(公告)日：2019-03-12
申请号：US14962624
申请日：2015-12-08
Applicant: General Electric Company
Inventor： Anant Achyut Setlur , James Edward Murphy , Florencio Garcia , Srinivas Prasad Sista
Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mn4+ doped phosphor and a quantum dot material, each of the color stable Mn4+ doped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mn4+ doped phosphor after exposure to a light flux of at least 20 w/cm2 at a temperature of at least 50 degrees Celsius for at least 21 hours is ≤4%. A backlight device including the lighting apparatus is also presented.
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公开(公告)号：US09938457B1
公开(公告)日：2018-04-10
申请号：US15270657
申请日：2016-09-20
Applicant: General Electric Company
Inventor： Digamber Gurudas Porob , James Edward Murphy , Florencio Garcia , Srinivas Prasad Sista , Anant Achyut Setlur , William Winder Beers , Fangming Du
CPC classification number: C09K11/617 , C09K11/02 , H01L25/0753 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0066
Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0≤i; 0≤j; 0≤k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.
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公开(公告)号：US20150361335A1
公开(公告)日：2015-12-17
申请号：US14303020
申请日：2014-06-12
Applicant: General Electric Company
Inventor： James Edward Murphy , Anant Achyut Setlur , Florencio Garcia , Srinivas Prasad Sista
CPC classification number: C09K11/616 , C09K11/617 , F21K9/60 , F21V9/30 , H01L33/502 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00012
Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+ (I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.
Abstract translation: 用于合成锰（Mn4 +）掺杂荧光体的方法包括研磨式I的荧光体前体的研磨颗粒，并且在升高的温度下将碾磨的颗粒与含氟氧化剂接触。[MFy]：Mn4 +（I）其中A 是Li，Na，K，Rb，Cs或它们的组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。
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公开(公告)号：US20150084005A1
公开(公告)日：2015-03-26
申请号：US14034151
申请日：2013-09-23
Applicant: General Electric Company
Inventor： Srinivas Prasad Sista , Jie Jerry Liu , Xiaolei Shi , Joseph John Shiang , Kevin Henry Janora
IPC: H01L51/52
CPC classification number: H01L51/5268 , H01L2251/5369
Abstract: A light extraction structure that includes a composition of a base material and a scattering material disposed within the base material. The scattering material is a metal oxide, and the difference between the refractive indices of the base material and the scattering material is at least +/−0.05.
Abstract translation: 一种光提取结构，其包括基材的组合物和设置在基材内的散射材料。 散射材料是金属氧化物，基材和散射材料的折射率之差至少为+/- 0.05。
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