公开(公告)号：US20180269081A1

公开(公告)日：2018-09-20

申请号：US15463478

申请日：2017-03-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Boris Bayha ,  Martin Trentzsch

IPC: H01L21/677 ,  H01L21/67

CPC classification number: H01L21/6773 ,  H01L21/67248 ,  H01L21/67389 ,  H01L21/67393 ,  H01L21/67769

Abstract: The present disclosure provides systems and techniques in which an ambient may be controlled on the basis of a current status of a micro-processed substrate so as to maintain the status within predefined limits. In illustrative embodiments, the substrate may be stored in an ambient, for which temperature and/or contents of one or more gaseous species may be controlled so as to reduce the change of status. Consequently, in particular, queue times may be significantly prolonged, thereby imparting superior flexibility to scheduling the overall process flow in a complex manufacturing environment.

公开(公告)号：US20180053832A1

公开(公告)日：2018-02-22

申请号：US15237794

申请日：2016-08-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sven Beyer ,  Martin Trentzsch ,  Stefan Flachowsky ,  Axel Henke

IPC: H01L29/51 ,  H01L27/12 ,  H01L21/84 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L29/516 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28291 ,  H01L21/84 ,  H01L27/1159 ,  H01L27/1203 ,  H01L29/0642 ,  H01L29/517 ,  H01L29/66628 ,  H01L29/78391 ,  H01L29/786

Abstract: The present disclosure provides in one aspect a semiconductor device including a substrate structure comprising an active semiconductor material formed over a base substrate and a buried insulating material formed between the active semiconductor material and the base substrate, a ferroelectric gate structure disposed over the active semiconductor material in an active region of the substrate structure, the ferroelectric gate structure comprising a gate electrode and a ferroelectric material layer, and a contact region formed in the base substrate under the ferroelectric gate structure.

公开(公告)号：US09236482B2

公开(公告)日：2016-01-12

申请号：US14711029

申请日：2015-05-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0607 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

Abstract translation: 本公开提供了用于形成半导体器件结构的半导体器件结构和方法，其中场感应结构被设置为比翅片的高度尺寸低于翅片的有源部分，高度尺寸平行于法线方向延伸 形成有翅片的半导体衬底表面。 因此，励磁结构在有源部分下方实现永久场效应。 翅片的活动部分应理解为由栅极电介质覆盖的翅片的一部分。

公开(公告)号：US20150008536A1

公开(公告)日：2015-01-08

申请号：US13936824

申请日：2013-07-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Goldbach ,  Martin Trentzsch

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8238

CPC classification number: H01L29/7851 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0607 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.

Abstract translation: 本公开提供了用于形成半导体器件结构的半导体器件结构和方法，其中场感应结构被设置为比翅片的高度尺寸低于翅片的有源部分，高度尺寸平行于法线方向延伸 形成有翅片的半导体衬底表面。 因此，励磁结构在有源部分下方实现永久场效应。 翅片的活动部分应理解为由栅极电介质覆盖的翅片的一部分。

公开(公告)号：US08872285B2

公开(公告)日：2014-10-28

申请号：US13781907

申请日：2013-03-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thilo Scheiper ,  Carsten Grass ,  Richard Carter ,  Martin Trentzsch

IPC: H01L21/02 ,  H01L29/78

CPC classification number: H01L21/28185 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7833

Abstract: Disclosed herein are various embodiments of an improved metal gate structure for semiconductor devices, such as transistors. In one example disclosed herein, a transistor has a gate structure consisting of a gate insulation layer positioned on a semiconducting substrate, a high-k insulation layer positioned on the gate insulation layer, a layer of titanium nitride positioned on the high-k insulation layer, a layer of aluminum positioned on the layer of titanium nitride and a layer of polysilicon positioned on the layer of aluminum.

Abstract translation: 这里公开了用于诸如晶体管的半导体器件的改进的金属栅极结构的各种实施例。 在本文公开的一个示例中，晶体管具有由位于半导体衬底上的栅极绝缘层，位于栅极绝缘层上的高k绝缘层，位于高k绝缘层上的氮化钛层组成的栅极结构 ，位于氮化钛层上的铝层和位于铝层上的多晶硅层。