公开(公告)号：US20170287777A1

公开(公告)日：2017-10-05

申请号：US15091138

申请日：2016-04-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Zhiguo Sun ,  Keith Tabakman

IPC: H01L21/768 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/41725 ,  H01L21/285 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/66477

Abstract: One method disclosed herein includes performing a plurality of conformal deposition processes to form first, second and third layers of material within a contact opening, wherein the first layer comprises a contact insulating material, the second layer comprises a metal-containing material and the third layer comprises a conductive cap material, wherein the third layer is positioned above the second layer. The method further includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, forming a conductive material above the third layer and removing portions of the layers of material positioned outside of the contact opening.

公开(公告)号：US20180130702A1

公开(公告)日：2018-05-10

申请号：US15345858

申请日：2016-11-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Viraj Sardesai

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76849 ,  H01L21/76883 ,  H01L23/53209

Abstract: Structures that include cobalt metallization and methods of forming such structures. A feature is located inside an opening in a dielectric layer and a cap layer located on a top surface of the feature. The feature is composed of cobalt, and the cap layer is composed of ruthenium or a cobalt-containing alloy.

公开(公告)号：US09831123B2

公开(公告)日：2017-11-28

申请号：US15091138

申请日：2016-04-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Zhiguo Sun ,  Keith Tabakman

IPC: H01L21/76 ,  H01L21/768 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/41725 ,  H01L21/285 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/66477

Abstract: One method disclosed herein includes performing a plurality of conformal deposition processes to form first, second and third layers of material within a contact opening, wherein the first layer comprises a contact insulating material, the second layer comprises a metal-containing material and the third layer comprises a conductive cap material, wherein the third layer is positioned above the second layer. The method further includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, forming a conductive material above the third layer and removing portions of the layers of material positioned outside of the contact opening.

公开(公告)号：US09812393B2

公开(公告)日：2017-11-07

申请号：US14867341

申请日：2015-09-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ajey P. Jacob ,  Suraj K. Patil ,  Min-hwa Chi

IPC: H01L23/52 ,  H01L23/525 ,  H01L23/522

CPC classification number: H01L23/5256 ,  H01L23/5226

Abstract: Programmable via devices and fabrication methods thereof are presented. The programmable via devices include, for instance, a first metal layer and a second metal layer electrically connected by a via link. The via link includes a semiconductor portion and a metal portion, where the via link facilitates programming of the programmable via device by applying a programming current through the via link to migrate materials between the semiconductor portion and the metal portion to facilitate a change of an electrical resistance of the via link. In one embodiment, the programming current facilitates formation of at least one gap region within the via link, the at least one gap region facilitating the change of the electrical resistance of the via link.

公开(公告)号：US09691497B2

公开(公告)日：2017-06-27

申请号：US14867331

申请日：2015-09-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Min-hwa Chi ,  Ajey P. Jacob

IPC: G11C17/16 ,  H01L23/525 ,  H01L29/78 ,  H01L29/06

CPC classification number: G11C17/16 ,  H01L23/5256 ,  H01L29/0673 ,  H01L29/785

Abstract: Programmable devices and fabrication methods thereof are presented. The programmable devices include, for instance, a first electrode and a second electrode electrically connected by a link portion. The link portion includes one material of a metal material or a semiconductor material and the first and second electrodes includes the other material of the metal material or the semiconductor material. For example, the link portion facilitates programming the programmable device by applying a programming current between the first electrode and the second electrode to facilitate migration of the one material of the link portion towards at least one of the first or second electrodes. In one embodiment, the programming current is configured to heat the link portion to facilitate the migration of the one material of the link portion towards the at least one of the first or second electrodes.

公开(公告)号：US09613855B1

公开(公告)日：2017-04-04

申请号：US15091196

申请日：2016-04-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Zhiguo Sun ,  Keith Tabakman

IPC: H01L21/768 ,  H01L21/00 ,  H01L21/8238

CPC classification number: H01L21/76859 ,  H01L21/285 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53266

Abstract: A method that includes, among other things, forming first and second contact openings in a layer of insulating material that respectively expose a portion of first and second source/drain (S/D) regions of first and second transistors that are of the opposite type, forming first, second and third layers of material within each of the first and second contact openings, and forming an implant masking layer that masks the first contact opening while leaving the second contact opening exposed for further processing. The method also includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, removing the implant masking layer and forming a conductive material in both the first and second contact openings so as to define first and second MIS contact structures positioned in the first and second contact openings.

公开(公告)号：US09502301B2

公开(公告)日：2016-11-22

申请号：US14730614

申请日：2015-06-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Min-hwa Chi

IPC: H01L21/82 ,  H01L21/285 ,  H01L21/28 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/283 ,  H01L21/324 ,  H01L21/225

CPC classification number: H01L21/823443 ,  H01L21/2253 ,  H01L21/28052 ,  H01L21/28097 ,  H01L21/283 ,  H01L21/285 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/76889 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823821 ,  H01L21/823835 ,  H01L21/823842

Abstract: Methods are provided for fabricating multi-layer semiconductor structures. The methods include, for example: providing a first layer and a second layer over a substrate, the first layer including a first metal and the second layer including a second metal, where the second layer is disposed over the first layer and the first metal and second metal are different metals; and annealing the first layer, the second layer, and the substrate to react at least a portion of the first metal of the first layer to form a first reacted layer and at least a portion of the second metal of the second layer to form a second reacted layer, where at least one of the first reacted layer or the second reacted layer includes at least one of a first metal silicide of the first metal or a second metal silicide of the second metal.

Abstract translation: 提供了制造多层半导体结构的方法。 所述方法包括例如：在衬底上提供第一层和第二层，第一层包括第一金属，第二层包括第二金属，其中第二层设置在第一层和第一金属之上， 第二种金属是不同的金属; 以及退火所述第一层，所述第二层和所述衬底以使所述第一层的所述第一金属的至少一部分反应以形成第一反应层和所述第二层的所述第二金属的至少一部分，以形成第二层 其中第一反应层或第二反应层中的至少一个包含第一金属的第一金属硅化物或第二金属的第二金属硅化物中的至少一种。

公开(公告)号：US10043708B2

公开(公告)日：2018-08-07

申请号：US15347119

申请日：2016-11-09

Applicant: GLOBALFOUNDRIES INC.

Inventor： Viraj Sardesai ,  Suraj K. Patil ,  Scott Beasor ,  Vimal Kumar Kamineni

IPC: H01L29/40 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation.

公开(公告)号：US09754903B2

公开(公告)日：2017-09-05

申请号：US14926880

申请日：2015-10-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Min-hwa Chi ,  Ajey Poovannummoottil Jacob

IPC: H01L21/00 ,  H01L23/62

CPC classification number: H01L23/62 ,  H01L23/5252

Abstract: A semiconductor structure includes a dielectric layer, a silicidable metal layer and an undoped filler material layer are used to create an anti-efuse device. The anti-efuse device may be situated in a dielectric layer of an interconnect structure for a semiconductor device or may be planar. Where part of an interconnect structure, the anti-efuse device may be realized by causing a current to flow therethrough while applying local heating. Where planar, the filler material may be situated between extensions of metal pads and metal atoms caused to move from the extensions to the filler material layer using a current flow and local heating.

公开(公告)号：US09570572B2

公开(公告)日：2017-02-14

申请号：US14523640

申请日：2014-10-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  Min-hwa Chi

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/28 ,  H01L21/324 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/665

Abstract: There is set forth herein a method of fabricating a contact interface formation. A layer of Ti metal can be deposited on a substrate and a layer of Ni metal can be deposited over the layer of Ti metal. An annealing process can be performed to form a contact interface formation having Ti in reacted form and Ni in reacted form.

Abstract translation: 这里提出了制造接触界面形成的方法。 可以在衬底上沉积Ti金属层，并且可以在Ti金属层上沉积Ni金属层。 可以进行退火处理以形成具有反应形式的Ti和反应形式的Ni的接触界面形成。