公开(公告)号：US20060205228A1

公开(公告)日：2006-09-14

申请号：US11414407

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

公开(公告)号：US20060205227A1

公开(公告)日：2006-09-14

申请号：US11413438

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

公开(公告)号：US20060240646A1

公开(公告)日：2006-10-26

申请号：US11472009

申请日：2006-06-21

申请人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher Hill ,  Garo Derderian

发明人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher Hill ,  Garo Derderian

IPC分类号： H01L21/48

CPC分类号： C23C16/4401 ,  C23C14/564

摘要： A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product, and removing the gaseous reaction product from the environment. The aluminum compound may be a trialkylaluminum compound, an alane, an alkylaluminum hydride, an alkylaluminum halide, an alkylaluminum sesquihalide, or an aluminum sesquihalide. The aluminum compound may alternatively form a solid aluminum product, which is deposited on a surface associated with the halogen-containing environment or onto a semiconductor disposed therewithin. The halogenated material is incorporated into the solid aluminum product, forming an inert film within which the halogenated material is trapped.

公开(公告)号：US20050147751A1

公开(公告)日：2005-07-07

申请号：US11075017

申请日：2005-03-08

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri ,  Gurtej Sandhu ,  F. Gealy ,  Chris Carlson

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C14/00 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455

摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

公开(公告)号：US20060222770A1

公开(公告)日：2006-10-05

申请号：US11404611

申请日：2006-04-13

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri

IPC分类号： C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

公开(公告)号：US20050249873A1

公开(公告)日：2005-11-10

申请号：US10839316

申请日：2004-05-05

申请人： Demetrius Sarigiannis ,  Garo Derderian

发明人： Demetrius Sarigiannis ,  Garo Derderian

IPC分类号： C23C16/00 ,  C23C16/448

CPC分类号： C23C16/4481

摘要： Embodiments of the invention are directed to apparatuses and methods for producing chemical reactive vapors for vapor deposition processes, including chemical vapor deposition or atomic layer deposition processes used in manufacturing microfeature workpieces. In one embodiment, a gas is passed over a surface of a material in an ampoule to form a vapor in a vapor cell within the ampoule. The vapor cell has a volume, and the volume of the vapor cell is maintained at least approximately constant as the material is vaporized. In another embodiment, a gas is passed through an inlet of an ampoule and onto a surface of a material to form a vapor, and a distance between the inlet and the surface of the material is maintained approximately constant as the material is vaporized. In still other embodiments, the vapor produced by the foregoing embodiments is used in a vapor deposition process.

摘要翻译： 本发明的实施方案涉及用于生产用于气相沉积工艺的化学反应蒸气的装置和方法，包括用于制造微型工件的化学气相沉积或原子层沉积工艺。 在一个实施方案中，气体通过安瓿中的材料的表面，以在安瓿内的蒸汽池中形成蒸汽。 蒸汽池具有体积，并且当材料蒸发时，蒸气室的体积保持至少近似恒定。 在另一个实施方案中，气体通过安瓿的入口并进入材料的表面以形成蒸气，并且当材料蒸发时，材料的入口和表面之间的距离保持大致恒定。 在其它实施方案中，由蒸气沉积工艺使用由前述实施方案产生的蒸汽。

公开(公告)号：US08257497B2

公开(公告)日：2012-09-04

申请号：US11009425

申请日：2004-12-10

申请人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo J Derderian

发明人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo J Derderian

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/4407 ,  C23C16/45544 ,  C23C16/46 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/31616 ,  Y10S438/903 ,  Y10S438/905 ,  Y10S438/913 ,  Y10S438/935

摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.

摘要翻译： 提供了活性物质的原位层沉积（ALD）破坏的系统和方法。 ALD工艺在衬底上沉积多个原子层。 前体气体通常进入反应器并与底物反应产生单层原子。 在从反应器中清除剩余的气体之后，第二个前置气体进入反应器并重复该过程。 一些前体气体的活性物质不容易从反应器中吹扫，从而增加吹扫时间并降低生产量。 从基板下游放置在反应器中的高温表面基本上破坏了活性物质。 基本上破坏活性物质允许反应器容易地清除，增加生产量。

公开(公告)号：US07329615B2

公开(公告)日：2008-02-12

申请号：US11200275

申请日：2005-08-09

申请人： Garo J. Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

发明人： Garo J. Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

IPC分类号： H04L21/31 ,  H04L21/469

CPC分类号： H01L51/0516 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/3141

摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.

摘要翻译： 本发明包括在衬底上沉积包含层的氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附以从气态第一前体在沉积室内的基底上形成第一物质单层。 化学吸附的第一物质与有效与第一物质反应以形成第一物质单层的组分的氧化物的气态第二前体接触。 所述接触至少部分地由流动的O 3至沉积室导致，其中O 3在至少170℃的温度下在其位置处 被排放到沉积室中。 依次重复化学吸附和接触以在基底上形成含氧化物层。 考虑另外的方面和实现。

公开(公告)号：US07282239B2

公开(公告)日：2007-10-16

申请号：US10665908

申请日：2003-09-18

申请人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo J. Derderian

发明人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo J. Derderian

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45561

摘要： In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and second valves that are in fluid communication with the first gas conduit. The first and second valves are configured in a parallel arrangement so that the first gas flows through the first valve and/or the second valve.

摘要翻译： 在一个实施例中，系统包括具有第一气体源，耦合到第一气体源的第一气体管道，由反应室承载的第一阀组件，反应室和气体分配器的气体供应组件。 第一阀组件包括与第一气体导管流体连通的第一和第二阀。 第一和第二阀构造成并联布置，使得第一气体流过第一阀和/或第二阀。

公开(公告)号：US07119034B2

公开(公告)日：2006-10-10

申请号：US11216897

申请日：2005-08-31

申请人： Garo J. Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

发明人： Garo J. Derderian ,  Demetrius Sarigiannis ,  Shuang Meng

IPC分类号： H01L21/31

CPC分类号： H01L51/0516 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/3141

摘要： This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the deposition chamber from a gaseous first precursor. The chemisorbed first species is contacted with a gaseous second precursor effective to react with the first species to form an oxide of a component of the first species monolayer. The contacting at least in part results from flowing O3 to the deposition chamber, with the O3 being at a temperature of at least 170° C. at a location where it is emitted into the deposition chamber. The chemisorbing and the contacting are successively repeated to form an oxide comprising layer on the substrate. Additional aspects and implementations are contemplated.