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11.发明授权Uncooled mercury cadmium telluride infrared devices with integral optical elements 失效具有集成光学元件的未冷却的碲化镉红外装置
公开(公告)号：US5828068A
公开(公告)日：1998-10-27
申请号：US834791
申请日：1997-04-03
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
IPC分类号： H01L27/144 , H01L27/146
CPC分类号： H01L27/1446
摘要： This is an uncooled HgCdTe IR sensor, and method of fabricating an uncooled HgCdTe IR sensor. The method comprises; growing an HgCdTe film on an IR transparent substrate, and shaping the substrate into a lens configuration. The HgCdTe IR sensor can comprise an epitaxial, HgCdTe film on an IR transparent substrate, with the substrate shaped in a lens configuration, creating an intregal, controlled (e.g. wide angle) field of view sensor. Reflections at the interface between the HgCdTe and the lens are substantially reduced, and problems of attaching HgCdTe to the lens are also substantially reduced. Preferably, the HgCdTe film is grown by liquid phase epitaxy, the substrate is CdZnTe or CdTe, and/or the substrate is shaped into a hemisphere or a cylindrical section. In one embodiment, an IR transparent overlayer is grown on an HgCdTe film 10 and the substrate is shaped into a hemisphere lens 16 and the IR transparent overlayer is shaped into an hemispherical lens 18. The HgCdTe film may also have a top surface with a non-uniform compositional gradient, to provide an HgCdTe IR sensor which can detect a wide range of optical wavelengths.
摘要翻译： 这是一种非冷却的HgCdTe红外传感器，以及制造非冷却HgCdTe红外传感器的方法。 该方法包括： 在IR透明基板上生长HgCdTe膜，并将基板成形为透镜构型。 HgCdTe IR传感器可以在IR透明衬底上包括外延的HgCdTe膜，其中衬底成形为透镜构型，形成内部，受控（例如广角）视野传感器。 HgCdTe和透镜之间的界面处的反射显着降低，并且将HgCdTe附着到透镜上的问题也显着降低。 优选地，HgCdTe膜通过液相外延生长，衬底是CdZnTe或CdTe，和/或将衬底成形为半球或圆柱形部分。 在一个实施例中，在HgCdTe膜10上生长IR透明覆盖层，并且将基板成形为半球透镜16，并且将IR透明覆盖层成形为半球形透镜18.H HgCdTe膜还可以具有非表面 - 组成梯度，以提供可以检测宽范围的光波长的HgCdTe红外传感器。
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公开(公告)号：US5259900A
公开(公告)日：1993-11-09
申请号：US544087
申请日：1990-06-26
CPC分类号： C30B33/00 , C30B29/48 , Y10S117/907
摘要： Methods of annealing Hg.sub.1-x Cd.sub.x Te slices (56) in a mercury reflux chamber (32, 34) with a mercury reservoir (52) at the bottom and condensation regions at the top (62) is disclosed. The chamber is heated by a furnace (44) that creates an annealing region encompassing both the reservoir and a holder (46) for the Hg.sub.1-x Cd.sub.x Te slices (56). In preferred embodiment methods reservoir (52) is heated to 270.degree. C. for two hours to sixty days. An annealing immediately after LPE growth by use of either mercury vapor from the melt or a separate reservoir is also disclosed.
摘要翻译： 公开了在汞回流室（32,34）中在底部具有汞储存器（52）并且在顶部（62）处的冷凝区域退火Hg1-xCdxTe切片（56）的方法。 通过炉（44）对腔室进行加热，炉子（44）产生包围储存器和用于Hg1-xCdxTe切片（56）的保持器（46）的退火区域。 在优选的实施方案中，储存器（52）被加热至270℃，持续2小时至60天。 还公开了通过使用来自熔体或单独储存器的汞蒸汽LPE生长后立即退火。
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13.发明授权
公开(公告)号：US5920071A
公开(公告)日：1999-07-06
申请号：US834790
申请日：1997-04-03
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
CPC分类号： G01J5/20
摘要： This is a mercury cadmium telluride flame detector which can be operated at room temperature, and a method for making such a detector. It utilizes at least two different compositions of mercury cadmium telluride on a common substrate; and has at least two contact areas on at least one of said mercury cadmium telluride compositions. In one embodiment, the substrate 104 is transparent and an upper mercury cadmium telluride layer 88 is over an insulating layer 89, which insulating layer is over a lower mercury cadmium telluride layer 90 and the lower mercury cadmium telluride is on said substrate, and contact areas 86 are provided on said upper mercury cadmium telluride layer 88, whereby the lower layer 90 filters radiation prior to the radiation reaching the upper layer 88. Preferably the insulating layer is cadmium telluride, the contact areas 86 are mercury telluride, and said upper layer, said insulating layer and said lower layer are epitaxial layers. In another embodiment, the substrate is transparent and different compositions of mercury cadmium telluride are fabricated on a deposition template by liquid phase epitaxial growth where the composition varies with time during said growth of the film and a top portion of said film is lapped at an angle to provide a first lapped surface and a bottom portion of said film and said deposition template are lapped away to provide a second lapped surface substantially parallel to said first lapped surface, and said lapped film is adhered to the substrate and said lapped film is etched to provide said different compositions of mercury cadmium telluride spaced from one another.
摘要翻译： 这是可以在室温下操作的汞镉碲火焰检测器，以及制造这种检测器的方法。 它使用至少两种不同组成的汞碲化镉在共同的基底上; 并且在所述汞碲化镉组合物中的至少一种上具有至少两个接触区域。 在一个实施例中，衬底104是透明的，并且上部汞碲化镓层88在绝缘层89的上方，该绝缘层位于下部汞镉碲化物层90之上，并且下部碲化汞镉在所述衬底上，并且接触区域 86设置在所述上汞碲化镉层88上，由此下层90在辐射到达上层88之前对辐射进行滤光。优选地，绝缘层是碲化镉，接触区域86是碲化汞，而所述上层， 所述绝缘层和所述下层是外延层。 在另一个实施方案中，基底是透明的，并且通过液相外延生长在沉积模板上制造不同的汞镉镉组合物，其中组合物在膜的生长期间随时间变化，并且所述膜的顶部以一定角度 以提供所述膜的第一重叠表面和底部，并且所述沉积模板被覆盖以提供基本上平行于所述第一重叠表面的第二重叠表面，并且所述重叠的膜粘附到所述基底，并且将所述重叠的膜蚀刻到 提供了彼此间隔开的汞碲化镉的不同组成。
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公开(公告)号：US4546406A
公开(公告)日：1985-10-08
申请号：US602792
申请日：1984-05-07
IPC分类号： H01L21/48 , H01L23/14 , H01L23/538 , H05K1/02 , H05K1/03 , H05K1/05 , H05K3/20 , H05K3/42 , H05K3/46
CPC分类号： C03C29/00 , C03C8/02 , H01L21/4857 , H01L23/142 , H01L23/538 , H05K1/0207 , H05K1/053 , H05K3/202 , H05K3/4629 , H05K3/4641 , H01L2224/48247 , H01L2224/49171 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01014 , H01L2924/01025 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H05K1/0206 , H05K1/0306 , H05K2201/068 , H05K2201/09054 , H05K2201/09309 , H05K2201/09781 , H05K2201/10969 , H05K2203/0323 , H05K2203/0369 , H05K2203/1476 , H05K3/429 , H05K3/4611 , Y10T428/12528
摘要： An electronic circuit interconnection system provides high density mounting of ceramic chip-carrier integrated circuit devices or other beam-lead, dual-in-line (DIP), tape-automated-bonded (TAB), flip-chip, or direct-mounted i.c. devices with wire-bonded interconnects or the like on an economical, dimensionally-stable, interconnection substrate which has high heat dissipating properties. The substrate has glass components which are fused onto etched metal patterns and which are proportioned relative to the metal patterns so that the heat-expansion properties of the substrate correspond to those of the i.c. devices to maintain bond integrity between the i.c. leads and circuit paths on the substrate and so that the substrate has sufficient heat-dissipating properties to permit the high density i.c. mounting. The substrates incorporate circuit paths, device mounting pads, edge terminals, pin mounting holes and other typical substrate features in the etched patterns in multimetal laminated metal plates of selected thickness which are coated on one or both sides with glass frit fused to the plates. Where substrates with more than one layer are desired, glass-coated plates are stacked with pin mounting holes and the like aligned and the glass coatings are fused together. Metal vias extend through the glass coatings where desired to interconnect metal layers of the substrate.
摘要翻译： 电子电路互连系统提供高密度安装陶瓷芯片载体集成电路器件或其他射束引线，双列直插（DIP），带自动键合（TAB），倒装芯片或直接安装的直流 在具有高散热特性的经济，尺寸稳定的互连基板上具有引线接合互连件的装置等。 衬底具有熔合到蚀刻金属图案上并且相对于金属图案成比例的玻璃成分，使得衬底的热膨胀特性对应于直流电的那些。 保持i.c.之间的债券完整性的设备。 引线和电路路径，使基板具有足够的散热特性，以允许高密度直流电。 安装。 这些基板在被选择厚度的多金属层压金属板中的蚀刻图案中包含电路路径，器件安装焊盘，边缘端子，引脚安装孔和其它典型的衬底特征，其在一侧或两侧上用与玻璃板熔合的玻璃料一起涂覆。 在需要多于一层的基材的情况下，玻璃涂覆的板堆叠，销钉安装孔等对齐，并且玻璃涂层熔合在一起。 金属通孔在需要时延伸穿过玻璃涂层以互连基底的金属层。
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公开(公告)号：US4472762A
公开(公告)日：1984-09-18
申请号：US438137
申请日：1982-11-01
IPC分类号： H01L21/48 , H01L23/14 , H01L23/538 , H05K1/02 , H05K1/03 , H05K1/05 , H05K3/20 , H05K3/42 , H05K3/46 , H05K1/09
CPC分类号： H05K3/4629 , H01L21/4857 , H01L23/142 , H01L23/538 , H05K1/0207 , H05K1/053 , H05K3/202 , H05K3/4641 , H01L2224/49171 , H01L2924/09701 , H05K1/0206 , H05K1/0306 , H05K2201/068 , H05K2201/09054 , H05K2201/09309 , H05K2201/09781 , H05K2201/10969 , H05K2203/0323 , H05K2203/0369 , H05K2203/1476 , H05K3/429 , H05K3/4611
摘要： An electronic circuit interconnection system provides high density mounting on ceramic chip-carrier integrated circuit devices or other beam-lead, dual-in-line (DIP), tape-automated-bonded (TAB), flip-chip, or direct-mounted i.c. devices with wire-bonded interconnects or the like on an economical, dimensionally-stable, interconnection substrate which has high heat dissipating properties. The substrate has glass components which are fused onto etched metal patterns and which are proportioned relative to the metal patterns so that the heat-expansion properties of the substrate correspond to those of the i.c. devices to maintain bond integrity between the i.c. leads and circuit paths on the substrate and so that the substrate has sufficient heat-dissipating properties to permit the high density i.c. mounting. The substrates incorporate circuit paths, device mounting pads, edge terminals, pin mounting holes and other typical substrate features in the etched patterns in multimetal laminated metal plates of selected thickness which are coated on one or both sides with glass frit fused to the plates. Where substrates with more than one layer are desired, glass-coated plates are stacked with pin mounting holes and the like aligned and the glass coatings are fused together. Metal vias extend through the glass coatings where desired to interconnect metal layers of the substrate.
摘要翻译： 电子电路互连系统提供高密度安装在陶瓷芯片载体集成电路器件或其他射束引线，双列直插式（DIP），带自动键合（TAB），倒装芯片或直接安装的直流电。 在具有高散热特性的经济，尺寸稳定的互连基板上具有引线接合互连件的装置等。 衬底具有熔合到蚀刻金属图案上并且相对于金属图案成比例的玻璃成分，使得衬底的热膨胀特性对应于直流电的那些。 保持i.c.之间的债券完整性的设备。 引线和电路路径，使基板具有足够的散热特性，以允许高密度直流电。 安装。 这些基板在被选择厚度的多金属层压金属板中的蚀刻图案中包含电路路径，器件安装焊盘，边缘端子，引脚安装孔和其它典型的衬底特征，其在一侧或两侧上用与玻璃板熔合的玻璃料一起涂覆。 在需要多于一层的基材的情况下，玻璃涂覆的板堆叠，销钉安装孔等对齐，并且玻璃涂层熔合在一起。 金属通孔在需要时延伸穿过玻璃涂层以互连基底的金属层。
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公开(公告)号：US4385202A
公开(公告)日：1983-05-24
申请号：US191039
申请日：1980-09-25
IPC分类号： H05K1/18 , H01L21/48 , H01L23/14 , H01L23/538 , H05K1/00 , H05K1/02 , H05K1/03 , H05K1/05 , H05K3/06 , H05K3/20 , H05K3/42 , H05K3/46 , H05K1/09
CPC分类号： H05K3/4641 , H01L21/4857 , H01L23/142 , H01L23/538 , H01L23/5383 , H05K1/0207 , H05K1/053 , H05K3/06 , H05K3/202 , H05K3/4629 , H01L2224/48227 , H01L2224/48472 , H01L2224/49171 , H01L2924/09701 , H05K1/0206 , H05K1/0306 , H05K2201/068 , H05K2201/09054 , H05K2201/09309 , H05K2201/09781 , H05K2201/10969 , H05K2203/0323 , H05K2203/0369 , H05K2203/1476 , H05K3/429 , H05K3/4611
摘要： An electronic circuit interconnection system permitting high density mounting of ceramic chip-carrier integrated circuit devices or other beam-lead, dual-in-line (DIP), tape-automated-bonded (TAB), flip-chip, or direct-mounted i.c. devices with wire-bonded interconnects or the like has economical, dimensionally-stable, interconnection substrate which has high heat dissipating properties. The substrate has glass components which are fused onto etched metal patterns and which are proportioned relative to the metal patterns so that the heat-expansion properties of the substrate correspond to those of the i.c. devices to maintain bond integrity between the i.c. leads and circuit paths on the substrate and so that the substrate has sufficient heat-dissipating properties to permit the high density i.c. mounting. The substrates incorporate circuit paths, device mounting pads, edge terminals, pin mounting holes and other typical substrate features in the etched patterns in multimetal laminated metal plates of selected thickness which are coated on one or both sides with glass frit fused to the plates. Where substrates with more than one layer are desired, glass-coated plates are stacked with pin mounting holes and the like aligned and the glass coatings are fused together. Metal vias extend through the glass coatings where desired to interconnect metal layers of the substrate.
摘要翻译： 一种电子电路互连系统，允许陶瓷芯片载体集成电路器件或其他射束引线，双列直插（DIP），带自动键合（TAB），倒装芯片或直接安装的直流安装的高密度安装。 具有导线接合互连件的装置等具有经济的尺寸稳定的互连基板，其具有高的散热性能。 衬底具有熔合到蚀刻金属图案上并且相对于金属图案成比例的玻璃成分，使得衬底的热膨胀特性对应于直流电的那些。 保持i.c.之间的债券完整性的设备。 引线和电路路径，使基板具有足够的散热特性，以允许高密度直流电。 安装。 这些基板在被选择厚度的多金属层压金属板中的蚀刻图案中包含电路路径，器件安装焊盘，边缘端子，引脚安装孔和其它典型的衬底特征，其在一侧或两侧上用与玻璃板熔合的玻璃料一起涂覆。 在需要多于一层的基材的情况下，玻璃涂覆的板堆叠，销钉安装孔等对齐，并且玻璃涂层熔合在一起。 金属通孔在需要时延伸穿过玻璃涂层以互连基底的金属层。
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公开(公告)号：US4296347A
公开(公告)日：1981-10-20
申请号：US79735
申请日：1979-09-28
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
CPC分类号： H03H9/145
摘要： An improved surface acoustic wave sensor in which two surface acoustic wave arrays are disposed in predetermined overlapping relationship by the use of a sealing compound which both establishes a thin sealed cavity and spaces the two surface acoustic wave arrays apart a predetermined distance, thereby eliminating the need for spacing rings or the like.
摘要翻译： 一种改进的表面声波传感器，其中两个表面声波阵列通过使用密封化合物以预定的重叠关系设置，两者密封化合物都建立了薄的密封腔并使两个声表面波阵列间隔开预定距离，从而消除了需要 用于间隔环等。
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18.发明授权Chemical fabrication of overhanging ledges and reflection gratings for surface wave devices 失效用于表面波器件的悬垂凸缘和反射光栅的化学制造
公开(公告)号：US4094677A
公开(公告)日：1978-06-13
申请号：US429475
申请日：1973-12-28
申请人： Donald F. Weirauch
发明人： Donald F. Weirauch
CPC分类号： C09K13/08 , G02B6/136 , G03F7/0005
摘要： A method is described of etching structures into .alpha. quartz and LiNbO.sub.3, two materials widely used in surface wave devices and which heretofore have not been found suitable for use with chemical etching techniques, in which concentrated HF acid at a predetermined temperature is used as an etchant, and the formation of overhanging ledges accomplished through a specific crystal orientation. Steps are shown which avoid the problems associated with suitable masking of the surface, which problems were encountered in the prior art, a primary step being one of a mechanical-chemical polishing to assure that the resist mask adheres to the surface properly.
摘要翻译： 描述了将α型石英和LiNbO 3蚀刻结构的方法，两种广泛用于表面波器件的材料，迄今尚未被发现适用于化学蚀刻技术，其中使用预定温度的浓缩HF酸作为蚀刻剂 ，并通过特定的晶体取向形成突出的突起。 示出了避免与现有技术中遇到的问题相关的与表面适当掩蔽相关的问题的步骤，主要步骤是机械化学抛光之一，以确保抗蚀剂掩模适当地粘合到表面上。
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