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    Photoresist monomer comprising bisphenol derivatives and polymers thereof
    11.
    发明授权
    Photoresist monomer comprising bisphenol derivatives and polymers thereof 失效
    包含双酚衍生物的光敏单体及其聚合物

    公开(公告)号：US06627383B2

    公开(公告)日：2003-09-30

    申请号：US09973630

    申请日：2001-10-09

    Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC: G03C1492

    CPC classification number: G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

    Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

    Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。其中R1，R2，R3，Y，W，m和n如本说明书中所定义。

    Photoresist monomer, polymer thereof and photoresist composition containing it
    13.
    发明授权
    Photoresist monomer, polymer thereof and photoresist composition containing it 失效
    光致抗蚀剂单体，其聚合物和含有它的光致抗蚀剂组合物

    公开(公告)号：US06448352B1

    公开(公告)日：2002-09-10

    申请号：US09621068

    申请日：2000-07-21

    Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC: C08F2608

    CPC classification number: C08F32/08 ,  G03F7/0395

    Abstract: The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention comprise both amine functional group and acid labile protecting group, and are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

    Abstract translation: 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体包括胺官能团和酸不稳定保护基团，并且由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

    Cleaning solution for photoresist and method for forming pattern using the same
    15.
    发明授权
    Cleaning solution for photoresist and method for forming pattern using the same 失效
    用于光致抗蚀剂的清洁溶液和使用其形成图案的方法

    公开(公告)号：US07314853B2

    公开(公告)日：2008-01-01

    申请号：US10875924

    申请日：2004-06-24

    Applicant: Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

    Inventor： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

    IPC: C11D1/72

    CPC classification number: G03F7/322 ,  C11D1/004 ,  C11D11/0047

    Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

    Abstract translation: 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要组分的H 2 O 2，作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。

    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
    17.
    发明授权
    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same 有权
    用于光致抗蚀剂的交联单体，以及使用其制备光致抗蚀剂聚合物的方法

    公开(公告)号：US07208260B2

    公开(公告)日：2007-04-24

    申请号：US10080507

    申请日：2002-02-22

    Applicant: Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

    Inventor： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

    IPC: G03C1/73 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  C08F232/00

    CPC classification number: G03F7/039 ,  C07C69/54 ,  C08F22/105 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R′ and R″ individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    Abstract translation: 本发明公开了由以下化学式1表示的交联单体，使用该交联单体的光致抗蚀剂聚合物的制备方法，所述光致抗蚀剂聚合物：其中，R'和R“分别表示氢或甲基 ; m表示1〜10的数; 并且R选自直链或支链C 1-10烷基，直链或支链C 1-10 1-10酯，直链或支链C 1〜 直链或支链C 1-10 1-10羧酸，直链或支链C 1-10 - 缩醛，直链或支链C 1-10 包括至少一个羟基，直链或支链C 1-10 1-10酯，包括至少一个羟基，直链或支链C 1-10 1-10酮，包括 至少一个羟基，包括至少一个羟基的直链或支链C 1-10 - 羧酸，和包含至少一个羟基的直链或支链C 1-10 - 组。

    Organic anti-reflective coating composition and pattern forming method using the same
    18.
    发明授权
    Organic anti-reflective coating composition and pattern forming method using the same 失效
    有机防反射涂料组合物及使用其的图案形成方法

    公开(公告)号：US07132217B2

    公开(公告)日：2006-11-07

    申请号：US10891568

    申请日：2004-07-15

    Applicant: Geun Su Lee ,  Sam Young Kim

    Inventor： Geun Su Lee ,  Sam Young Kim

    IPC: G03C1/825 ,  G03F7/20 ,  G03F7/30

    CPC classification number: G03F7/091 ,  Y10S430/106 ,  Y10S430/151 ,  Y10S430/162

    Abstract: Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.

    Abstract translation: 公开了一种有机抗反射涂层组合物，其被引入到光致抗蚀剂的顶部和使用其的图案形成方法中，在用于通过使用193nm ArF或157nm VUV光形成用于光刻的光刻胶的超精细图案的工艺中 来源，更具体地涉及一种有机抗反射涂料组合物，其可以保护光致抗蚀剂免受大气胺以最小化后曝光延迟效应，并且使扩散反射（即摆动现象）引起的图案失真最小化，同时改善切口 现象和反射率的降低，以及使用其的图案形成方法。

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