公开(公告)号：US20100110780A1

公开(公告)日：2010-05-06

申请号：US12291111

申请日：2008-11-06

申请人： Guy Wicker

发明人： Guy Wicker

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/0092

摘要： A minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET state. Although the duration and magnitude of RESET programming pulses in accordance with the principles of the present invention may vary depending, for example, upon the composition and structure of a cell, a method and apparatus in accordance with the principles of the present invention employs the briefest pulse practicable for a given cell or array of cells.

摘要翻译： 采用最小持续时间电流脉冲将可编程电阻存储器编程为高电阻复位状态。 虽然根据本发明的原理的RESET编程脉冲的持续时间和幅度可以根据例如单元的组成和结构而变化，但是根据本发明的原理的方法和装置使用最简单的 脉冲对于给定的细胞或细胞阵列是可行的。

公开(公告)号：US20100091561A1

公开(公告)日：2010-04-15

申请号：US12640723

申请日：2009-12-17

申请人： Tyler Lowrey ,  Ward Parkinson ,  Guy Wicker

发明人： Tyler Lowrey ,  Ward Parkinson ,  Guy Wicker

IPC分类号： G11C11/00 ,  H03K19/177

CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C2213/76 ,  G11C2213/77 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/141

摘要： A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.

摘要翻译： 可以使用存储元件，阈值开关元件或存储元件和阈值开关元件的串联组合来耦合电可编程矩阵阵列中的导线。 可以通过选择性地将导电线之间的相变材料和/或阈值开关材料串联的击穿层来降低泄漏。 矩阵阵列可以用在可编程逻辑器件中。

公开(公告)号：US20080048167A1

公开(公告)日：2008-02-28

申请号：US11975615

申请日：2007-10-19

申请人： Sergey Kostylev ,  Tyler Lowrey ,  Guy Wicker ,  Wolodymyr Czubatyj

发明人： Sergey Kostylev ,  Tyler Lowrey ,  Guy Wicker ,  Wolodymyr Czubatyj

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.

摘要翻译： 一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。 硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5是稀的 硫族化合物组合物。 包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前 最终使用操作。 改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。 展示了10年数据保存温度的显着改进。 通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

公开(公告)号：US20070096072A1

公开(公告)日：2007-05-03

申请号：US11399297

申请日：2006-04-06

申请人： Richard Dodge ,  Guy Wicker

发明人： Richard Dodge ,  Guy Wicker

IPC分类号： H01L29/02 ,  G11C11/00 ,  H01L21/302

CPC分类号： H01L45/1253 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/16

摘要： A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.

摘要翻译： 横向相变存储器包括由绝缘层隔开的一对电极。 第一电极形成在绝缘层的开口中并且是杯形的。 第一电极被绝缘层覆盖，绝缘层又被第二电极覆盖。 结果，电极之间的间隔可以被非常精确地控制并且被限制在非常小的尺寸。 在形成相变材料区域之前，电极有利地由相同的材料形成。

公开(公告)号：US20060157689A1

公开(公告)日：2006-07-20

申请号：US11037850

申请日：2005-01-18

申请人： Wolodymyr Czubatyj ,  Sergey Kostylev ,  Tyler Lowrey ,  Guy Wicker

发明人： Wolodymyr Czubatyj ,  Sergey Kostylev ,  Tyler Lowrey ,  Guy Wicker

IPC分类号： H01L29/08 ,  H01L21/84

CPC分类号： H01L45/1233 ,  H01L27/2427 ,  H01L45/00 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/1293 ,  H01L45/141

摘要： A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the carbon containing layer, converting a relatively localized region to a lower conductivity region. This region then causes the localization of heating and current flow through the upper phase change material layer. In some embodiments, less phase change material may be required to change phase to form a phase change memory, reducing the current requirements of the resulting phase change memory.

摘要翻译： 含碳层可以形成在一对含硫族化物的含相变层的层之间。 当下部硫族化物层允许电流通过时，可以在其中形成细丝。 然后，细丝将含碳层的电加热定位，将相对局部化的区域转化为较低的导电性区域。 该区域然后导致加热和电流流过上相变材料层的定位。 在一些实施例中，可能需要较少的相变材料来改变相位以形成相变存储器，从而减少所得到的相变存储器的电流要求。

公开(公告)号：US20060013034A1

公开(公告)日：2006-01-19

申请号：US11229955

申请日：2005-09-19

申请人： Tyler Lowrey ,  Guy Wicker ,  Edward Spall

发明人： Tyler Lowrey ,  Guy Wicker ,  Edward Spall

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C2013/0083 ,  G11C2029/4402

摘要： A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on the chip; storing information about said electronic circuit in the phase-change memory. A method of operating an optical display.

摘要翻译： 一种定制集成电路芯片的方法，包括以下步骤：在所述芯片上提供电子电路; 在芯片上提供相变存储器; 将关于所述电子电路的信息存储在相变存储器中。 一种操作光学显示器的方法。

公开(公告)号：US20050142731A1

公开(公告)日：2005-06-30

申请号：US11042522

申请日：2005-01-25

申请人： Guy Wicker

发明人： Guy Wicker

IPC分类号： H01L21/8239 ,  H01L21/768 ,  H01L27/24 ,  H01L45/00 ,  H01L21/8242

CPC分类号： H01L21/76838 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1691

摘要： Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.

公开(公告)号：US06567296B1

公开(公告)日：2003-05-20

申请号：US10041684

申请日：2001-10-24

申请人： Giulio Casagrande ,  Tyler Lowrey ,  Roberto Bez ,  Guy Wicker ,  Edward Spall ,  Stephen Hudgens ,  Wolodymyr Czubatyj

发明人： Giulio Casagrande ,  Tyler Lowrey ,  Roberto Bez ,  Guy Wicker ,  Edward Spall ,  Stephen Hudgens ,  Wolodymyr Czubatyj

IPC分类号： G11C1706

CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/72

摘要： A memory device including a plurality of memory cells, a plurality of insulated first regions of a first type of conductivity formed in a chip of semiconductor material, at least one second region of a second type of conductivity formed in each first region, a junction between each second region and the corresponding first region defining a unidirectional conduction access element for selecting a corresponding memory cell connected to the second region when forward biased, and at least one contact for contacting each first region; a plurality of access elements are formed in each first region, the access elements being grouped into at least one sub-set consisting of a plurality of adjacent access elements without interposition of any contact, and the memory device further includes means for forward biasing the access elements of each sub-set simultaneously.

摘要翻译： 一种存储器件，包括多个存储器单元，形成在半导体材料的芯片中的第一类型的导电性的多个绝缘的第一区域，在每个第一区域中形成的至少一个第二导电类型的第二区域， 每个第二区域和相应的第一区域限定单向传导访问元件，用于当正向偏置时选择连接到第二区域的对应的存储单元，以及用于接触每个第一区域的至少一个触点; 在每个第一区域中形成多个访问元件，所述访问元件被分组成由多个相邻的访问元件组成的至少一个子集，而不插入任何联系人，并且所述存储器设备还包括： 每个子集的元素同时进行。

公开(公告)号：US5159661A

公开(公告)日：1992-10-27

申请号：US594387

申请日：1990-10-05

申请人： Stanford R. Ovshinsky ,  Guy Wicker

发明人： Stanford R. Ovshinsky ,  Guy Wicker

IPC分类号： G06N3/063 ,  G11C11/56 ,  H01L45/00

CPC分类号： G11C11/5678 ,  G06N3/063 ,  G06N3/0635 ,  G11C11/56 ,  G11C11/54 ,  G11C13/0004

摘要： A parallel distributed processor comprises matrices of unit cells arranged in a stacked configuration. Each unit cell includes a chalcogenide body which may be set and reset to a plurality of values of a given physical property. Interconnections between the unit cells are established via the chalcogenide materials and the pattern and strength of the interconnections is determined by the set values of the chalcogenide. The processor is readily adapted to the construction of neural network computing systems.

公开(公告)号：US08344348B2

公开(公告)日：2013-01-01

申请号：US12244421

申请日：2008-10-02

申请人： Guy Wicker ,  Wolodymyr Czubatyj

发明人： Guy Wicker ,  Wolodymyr Czubatyj

IPC分类号： H01L47/00

CPC分类号： H01L45/04 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144

摘要： An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first electrode and second electrode. A nonlinear electrode material is disposed between the first electrode and the second electrode. The nonlinear electrode material is electrically in series with the first electrode, the first active material, the second active material, and the second electrode. The first electrode and the first active material undergo no chemical or electrochemical reaction when current passes between the first electrode and the second electrode.

摘要翻译： 电气装置包括第一电极和第二电极。 第一活性材料在第一电极和第二电极之间。 第二活性材料在第一电极和第二电极之间。 非线性电极材料设置在第一电极和第二电极之间。 非线性电极材料与第一电​​极，第一活性材料，第二活性材料和第二电极电串联。 当电流通过第一电极和第二电极之间时，第一电极和第一活性材料不经历化学或电化学反应。