公开(公告)号：US06723664B2

公开(公告)日：2004-04-20

申请号：US10041609

申请日：2002-01-10

申请人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

发明人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

IPC分类号： H01L2131

CPC分类号： C23C16/44 ,  C23C16/0236 ,  H01L21/28264 ,  H01L21/3185

摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

摘要翻译： 本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。 催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。 在该预处理之后进行在基板表面上的薄膜沉积。 热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。 并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面密度为10 12 eV -1 cm -2以下，这是通过上述预处理在绝缘体中产生的 薄膜沉积工艺。

公开(公告)号：US20070186970A1

公开(公告)日：2007-08-16

申请号：US10556063

申请日：2004-03-29

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L31/00

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US20060009017A1

公开(公告)日：2006-01-12

申请号：US11155959

申请日：2005-06-17

申请人： Shigeru Sembommatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

发明人： Shigeru Sembommatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

IPC分类号： C23C16/24 ,  H01L21/20 ,  H01L21/36

CPC分类号： C30B29/06 ,  C30B13/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686

摘要： Conventional methods of crystallizing a semiconductor film through scanning with a pulse laser have had a problem in that variation in particle diameter or shape of a crystal grain causes variation in characteristics of a thin film transistor, which lowers display quality of a liquid crystal display. In view of this, in a method of crystallizing a semiconductor film according to the present invention, after a step of performing scanning with a first pulse laser, scanning with a second pulse laser, which has a higher energy density than that of the first pulse laser, is performed in a substantially orthogonal direction to a traveling direction of scanning with the first pulse laser. With this method, the semiconductor film can be crystallized uniformly.

摘要翻译： 通过用脉冲激光扫描来结晶半导体膜的常规方法的问题在于，晶粒的粒径或形状的变化引起薄膜晶体管的特性的变化，这降低了液晶显示器的显示质量。 鉴于此，在根据本发明的半导体膜的结晶方法中，在用第一脉冲激光进行扫描的步骤之后，用比第一脉冲具有更高的能量密度的第二脉冲激光进行扫描 激光在与第一脉冲激光器的扫描的行进方向大致正交的方向上进行。 通过这种方法，半导体膜可以均匀地结晶。

公开(公告)号：US20090263911A1

公开(公告)日：2009-10-22

申请号：US11991278

申请日：2006-08-22

申请人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

发明人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

IPC分类号： G01N27/00 ,  G01N33/00

CPC分类号： H01J37/32963 ,  H01J37/3244 ,  H01J37/32935 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the present invention is to provide an end point detection method in a gas phase reaction processing apparatus.An end point detection method in the case where a catalyst 9 arranged in a treatment chamber is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst 9 heated at high temperature, comprises the steps of supplying the electric power to the catalyst 9 from a constant current source 10, detecting electric potential difference between both ends of the catalyst 9, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

摘要翻译： 本发明的目的是提供一种气相反应处理装置中的终点检测方法。 在布置在处理室中的催化剂9通过向其供给电力而在高温下加热并且通过在高温下加热的催化剂9裂解反应气体来进行处理的情况下的终点检测方法包括以下步骤 从恒定电流源10向催化剂9供给电力，检测催化剂9的两端之间的电位差，进行检测出的电位差的一次微分，并根据获得的主电极确定治疗的终点 差分值。

公开(公告)号：US06349669B1

公开(公告)日：2002-02-26

申请号：US09102665

申请日：1998-06-23

申请人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

发明人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

IPC分类号： C23C1600

CPC分类号： C23C16/44 ,  C23C16/0236 ,  H01L21/28264 ,  H01L21/3185

摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV−1 cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

摘要翻译： 本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。 催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。 在该预处理之后进行在基板表面上的薄膜沉积。 热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。 而且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV-1cm-2或更低，这是通过上述绝缘膜沉积工艺中的预处理而得到的。

公开(公告)号：US08860876B2

公开(公告)日：2014-10-14

申请号：US13358566

申请日：2012-01-26

申请人： Atsushi Masuda ,  Takeshi Harano ,  Naho Suzuki ,  Masayuki Yoshii

发明人： Atsushi Masuda ,  Takeshi Harano ,  Naho Suzuki ,  Masayuki Yoshii

IPC分类号： H04N5/222 ,  G03B15/03 ,  H04N5/225 ,  H04N5/235 ,  G03B7/16 ,  H04N5/232 ,  G03B17/20

CPC分类号： H04N5/2256 ,  G03B7/16 ,  G03B15/03 ,  G03B17/20 ,  H04N5/23293 ,  H04N5/2354

摘要： An apparatus includes a display control section configured to control display of image data for an image, the image data including flash reach information identifying at least one portion of the image corresponding to at least one region reached by light from a flash. Also described are a method and computer-readable storage medium for controlling display of image data for the image.

摘要翻译： 一种装置包括：显示控制部分，被配置为控制图像的图像数据的显示，所述图像数据包括识别与来自闪光灯的光达到的至少一个区域对应的图像的至少一部分的闪光到达信息。 还描述了一种用于控制图像的图像数据的显示的方法和计算机可读存储介质。

公开(公告)号：US08325051B2

公开(公告)日：2012-12-04

申请号：US12699227

申请日：2010-02-03

申请人： Atsushi Masuda

发明人： Atsushi Masuda

IPC分类号： G08B21/00 ,  H02J7/14 ,  H02J7/00

CPC分类号： H01M10/465 ,  H01M10/0525 ,  H01M10/44 ,  H01M10/48 ,  H01M10/486 ,  H01M10/488 ,  H02J7/0031 ,  H02J7/35 ,  Y02E60/122

摘要： An information processing apparatus includes: a rechargeable battery that is electrically connected to a charging electric power generating device; a switch that is disposed between the rechargeable battery and the charging electric power generating device; an electric power measuring unit that measures electric power produced by the charging electric power generating device; and a charge controller that controls the switch to be turned OFF when the electric power measured by the electric power measuring unit is smaller than a first electric power threshold.

摘要翻译： 一种信息处理装置，包括：电连接到充电发电装置的可再充电电池; 设置在所述充电电池和所述充电发电装置之间的开关; 电力测量单元，其测量由所述充电发电装置产生的电力; 以及充电控制器，当由所述电力测量单元测量的电力小于第一电力阈值时，控制所述开关被切断。

公开(公告)号：US07913204B2

公开(公告)日：2011-03-22

申请号：US12252643

申请日：2008-10-16

申请人： Atsushi Masuda

发明人： Atsushi Masuda

IPC分类号： G06F17/50

CPC分类号： G06F17/5045 ,  G06F17/5022

摘要： A high-level synthesis apparatus for automatically generating a register transfer level (RTL) logic circuit from a behavioral description has a scheduling unit configured to perform data flow analysis and scheduling to generate a data flow graph showing an operation cycle of an operation from the behavioral description, a scheduling result inputting/outputting unit configured to extract a point to be allocated to a register from the data flow graph and output register information indicating the point, the scheduling result inputting/outputting unit being provided with dynamic analysis data that includes at least one of the number of times that data at the point has been substituted and the number of times that a value stored at the point has changed by a predetermined simulation, an allocating unit configured to consult dynamic analysis data and allocate circuit elements to the behavioral description, and an RTL description generating unit configured to generate the logic circuit based on the allocation of circuit elements by the allocating unit.

摘要翻译： 用于根据行为描述自动生成寄存器传送电平（RTL）逻辑电路的高级合成装置具有调度单元，其被配置为执行数据流分析和调度以生成表示从行为的操作的操作周期的数据流图 描述，调度结果输入/输出单元，被配置为从数据流图中提取要分配给寄存器的点，并输出指示该点的寄存器信息，调度结果输入/输出单元提供动态分析数据，该动态分析数据至少包括 在该点的数据被替代的次数和在该点存储的值的次数已经通过预定的模拟而改变的次数之一，配置单元被配置为咨询动态分析数据并将电路元件分配给行为描述 以及被配置为基于逻辑电路生成的RTL描述生成单元 关于由分配单元分配电路元件。

公开(公告)号：US07583854B2

公开(公告)日：2009-09-01

申请号：US11090124

申请日：2005-03-28

申请人： Hiroki Tagawa ,  Atsushi Masuda

发明人： Hiroki Tagawa ,  Atsushi Masuda

IPC分类号： G06K9/36

CPC分类号： G06T1/00

摘要： A data processing system includes a block setting module setting a to-be-processed block shape including subject data, which is one of 2-dimentional data in a matrix stored in a virtual storage area, and influenced data influenced by results of processing subject data, a division module dividing 2-dimentional data into a plurality of execution blocks based on information of the to-be processed block shape, and a processing module sequentially processing data in each execution block along a row direction in units of execution blocks.

摘要翻译： 数据处理系统包括块设置模块，其设置包括被存储在虚拟存储区域中的矩阵中的二维数据之中的被摄体数据的待处理块形状，以及受处理对象数据结果影响的影响数据 分割模块，其基于待处理块形状的信息将二维数据划分为多个执行块;以及处理模块，其以执行块为单位沿着行方向依次处理每个执行块中的数据。

公开(公告)号：US20080104365A1

公开(公告)日：2008-05-01

申请号：US11957781

申请日：2007-12-17

申请人： Kazuhyoshi Kohno ,  Atsushi Mizuno ,  Atsushi Masuda ,  Ryuichiro Ohyama ,  Yutaka Ota

发明人： Kazuhyoshi Kohno ,  Atsushi Mizuno ,  Atsushi Masuda ,  Ryuichiro Ohyama ,  Yutaka Ota

IPC分类号： G06F15/00

CPC分类号： G06F17/5045 ,  G06F8/4434 ,  G06F17/5022

摘要： A design apparatus for designing a processor re-configurable for an application, includes an analysis unit that analyzes the content of a program to be executed by the processor; a hardware extension unit that searches the program for a part of the program allowing hardware extension in accordance with the analysis results by the analysis unit and generates hardware extension information for the searched part; an extended instruction definition unit that searches the program for a part allowing use of an extended instruction in accordance with the analysis results by the analysis unit and generates definition of an extended instruction for the searched part; and a performance estimation unit that estimates whether or not the performance of the processor satisfies a target performance using at least one of the hardware extension information generated by the hardware extension unit and the definition of the extended instruction generated by the extended instruction definition unit.

摘要翻译： 一种用于设计用于应用的可重配置的处理器的设计装置，包括：分析单元，分析由处理器执行的程序的内容; 硬件扩展单元，其根据分析单元的分析结果搜索程序的一部分，允许硬件扩展，并产生搜索到的部分的硬件扩展信息; 扩展指令定义单元，其根据分析单元的分析结果搜索程序中允许使用扩展指令的部分，并生成所搜索的部分的扩展指令的定义; 以及性能估计单元，其使用由所述硬件扩展单元生成的硬件扩展信息和由所述扩展指令定义单元生成的扩展指令的定义中的至少一个来估计所述处理器的性能是否满足目标性能。