公开(公告)号：US5302232A

公开(公告)日：1994-04-12

申请号：US987683

申请日：1992-12-09

申请人： Hiroji Ebe ,  Akira Sawada

发明人： Hiroji Ebe ,  Akira Sawada

IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L21/205 ,  H01L21/36 ,  H01L21/365 ,  H01L31/0264

CPC分类号： H01L21/02562 ,  C30B25/02 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02609 ,  H01L21/0262 ,  Y10S438/973

摘要： A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.

摘要翻译： 在（111）硅衬底上生长的II-VI族外延层具有如II-VI族外延层和硅衬底之间的最小化的晶格失配。 生长的组II-VI外延层在与衬底的界面处还具有（111）面，并且在（111）硅衬底和II-VI族外延层之间的界面处形成30度的面内旋转滑移 层。 上述结构是通过金属有机化学气相沉积法（MOCVD）制备的，其中VI族气源源与II族气体源的摩尔比在生长过程中保持大于15。 （111）硅衬底优选地朝向硅衬底的<110>方向错误取向。 当在外延层上生长HgCdTe层时，由此形成的产品可用作单片红外检测器，其中在HgCdTe层中形成多个检测器元件，并且在硅衬底中形成信号处理电路。

公开(公告)号：US07456422B2

公开(公告)日：2008-11-25

申请号：US11366597

申请日：2006-03-03

申请人： Ayahito Uetake ,  Hiroji Ebe ,  Kenichi Kawaguchi

发明人： Ayahito Uetake ,  Hiroji Ebe ,  Kenichi Kawaguchi

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/3218 ,  H01S5/3404 ,  H01S5/3412 ,  H01S5/34373

摘要： A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.

摘要翻译： 包括量子点的半导体器件包括具有第一晶格常数的半导体晶体的阻挡层和包含在阻挡层上形成的具有第二晶格常数的半导体晶体的多个量子点的量子点层和形成在阻挡层上的侧阻挡层 具有第三晶格常数的半导体晶体，其形成为与多个量子点的侧面接触，其中阻挡层，量子点和侧阻挡层被构造成使得 第一晶格常数和第二晶格常数具有与第一晶格常数和第三晶格常数的值之差的符号。

公开(公告)号：US06445000B1

公开(公告)日：2002-09-03

申请号：US09590262

申请日：2000-06-09

申请人： Prafulla Masalkar ,  Hiroji Ebe

发明人： Prafulla Masalkar ,  Hiroji Ebe

IPC分类号： H01L2906

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0352

摘要： A first multi-quantum well structure 12 is formed on a GaAs substrate 10. The first multi-quantum well structure 12 is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. A second multi-quantum well structure 14 is formed on the first multi-quantum well structure 12. The second multi-quantum well structure 14 is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. Whereby a required electrode area can be smaller to thereby obtain higher detection sensitivity.

摘要翻译： 第一多量子阱结构12形成在GaAs衬底10上。第一多量子阱结构12由彼此交替放置的AlGaAs势垒层和GaAs阱层形成，以形成多量子阱。 GaAs阻挡层不掺杂杂质。 第二多量子阱结构14形成在第一多量子阱结构12上。第二多量子阱结构14由彼此交替放置的AlGaAs势垒层和GaAs阱层形成，以形成多 - 量子井 GaAs阻挡层不掺杂杂质。 所需的电极面积可以更小，从而获得更高的检测灵敏度。

公开(公告)号：US5728425A

公开(公告)日：1998-03-17

申请号：US28143

申请日：1993-03-09

申请人： Hiroji Ebe ,  Akira Sawada ,  Hiroshi Takigawa

发明人： Hiroji Ebe ,  Akira Sawada ,  Hiroshi Takigawa

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  C30B25/02 ,  C30B25/14 ,  H01L21/31

CPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/4482 ,  C23C16/52 ,  C30B25/02 ,  C30B29/48

摘要： A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg.sub.1-x Cd.sub.x Te (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or .DELTA.x=0.002) inhomogeneity in composition.

摘要翻译： 在化合物半导体膜的化学气相沉积（CVD）的过程中，在进料源气体和生长膜之间使用分开的步骤的方法和装置。 在一个实施例中，CVD反应器腔室具有能够改变腔室的体积以控制其中的源气体的压力的活塞。 在源气体由于蒸汽压不足而在不发生CVD的条件下将源气体供给到具有基板的腔室之后，将腔室保持关闭几秒钟，然后由活塞加压以开始CVD。 典型的结果表明，3英寸CdTe晶片上的Hg1-xCdxTe（其中x = 0.2）膜的组成不均匀性仅为1％（或DELTA x = 0.002）。