摘要:
A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.
摘要:
A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.
摘要:
A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.
摘要:
An optical integrated device includes an optical waveguide structure formed on a semiconductor substrate and including a plurality of first channel optical waveguide portions, an optical coupler portion and a second channel optical waveguide portion, a burying layer formed from a semi-insulating semiconductor material and burying the optical waveguide structure therein such that an upper portion thereof forms a flat face and a side portion thereof forms an inclined face having a predetermined angle with respect to the semiconductor substrate, and a plurality of dummy structure bodies provided over a desired region in the proximity of at least an output side of the optical coupler portion so that radiation light from the optical coupler portion is spatially separated from signal light propagating along the second channel optical waveguide portion. The plural dummy structure bodies are provided discretely so as to be buried flat by the burying layer.
摘要:
An optical integrated device includes an optical waveguide structure formed on a semiconductor substrate and including a plurality of first channel optical waveguide portions, an optical coupler portion and a second channel optical waveguide portion, a burying layer formed from a semi-insulating semiconductor material and burying the optical waveguide structure therein such that an upper portion thereof forms a flat face and a side portion thereof forms an inclined face having a predetermined angle with respect to the semiconductor substrate, and a plurality of dummy structure bodies provided over a desired region in the proximity of at least an output side of the optical coupler portion so that radiation light from the optical coupler portion is spatially separated from signal light propagating along the second channel optical waveguide portion. The plural dummy structure bodies are provided discretely so as to be buried flat by the burying layer.
摘要:
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.
摘要:
An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.
摘要:
An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.
摘要:
A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.