摘要:
A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.
摘要:
A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg.sub.1-x Cd.sub.x Te (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or .DELTA.x=0.002) inhomogeneity in composition.
摘要翻译:在化合物半导体膜的化学气相沉积(CVD)的过程中,在进料源气体和生长膜之间使用分开的步骤的方法和装置。 在一个实施例中,CVD反应器腔室具有能够改变腔室的体积以控制其中的源气体的压力的活塞。 在源气体由于蒸汽压不足而在不发生CVD的条件下将源气体供给到具有基板的腔室之后,将腔室保持关闭几秒钟,然后由活塞加压以开始CVD。 典型的结果表明,3英寸CdTe晶片上的Hg1-xCdxTe(其中x = 0.2)膜的组成不均匀性仅为1%(或DELTA x = 0.002)。
摘要:
A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.
摘要:
To provide an entry control system as well as an entry control method allowing for an easy entry of user, permitting a restriction to persons who have a legitimate right to enter a facility, an illuminating device (1) emits a modulated visible light signal 13 modulated by use of a door ID code into a preset illumination range, the modulated visible light signal 13 from the illuminating device (1) is received by a mobile terminal (2) portable by the user, where it is demodulated for wireless signal transmission, and the door ID code transmitted from the mobile terminal (2) is received by an authentication device (3), which judges whether or not the door ID code is legitimate, and generates an unlock command when the door ID code is judged to be legitimate, and a door (4) for a facility controlled of entry receives the unlock command from the authentication device (3), whereby it is unlocked.
摘要:
A heat sink includes a radiator fin for dissipating heat of an electronic device provided on a printed board; a plurality of radiator fins included in the heat sink is formed in an arbitrary diameter size; and the radiator fins are connected to each other by inserting a pair of fastening screws through a through hole provided on each of the radiator fins, and a tip end of the fastening screws is screwed and fastened to a screw hole of a base heat sink fixed on the upper surface of an electronic device.
摘要:
According to one embodiment, a monitoring system is provided, which has a personal authentication unit and a camera. The personal authentication unit is provided near a security gate and authenticates a person allowed to pass through the security gate. The camera photographs an area near the security gate, in which the personal authentication unit is provided. The monitoring system further has a data generation unit configured to generate personal attribute data about the person authenticated by the personal authentication unit, a person identification unit configured to identify the person authenticated, on the basis of video data generated by the camera, and a monitoring data generation unit configured to generate monitoring data composed of video data and metadata. The video data represents an image including the person identified by the person identification unit. The metadata is associated with the video data and containing the personal attribute data.
摘要:
A first arithmetic operator (11) includes a first modular arithmetic coding encoder (11b) for encoding a numeric data transmitted by a command from a central controller (31) into a modular arithmetic code, a first arithmetic operation processor (11a) using the numeric data as modular arithmetic coded as an input operand, for executing an arithmetic operation based on a command from the central controller (13), to provide an output in the form of a modular arithmetic code, and a first modular arithmetic code decoder (11c) for determining presence or absence of a bit error in the numeric data output from the first arithmetic operation processor, correcting the bit error, if detected any, to output a decoded numeric data.
摘要:
In a method of degradation diagnosis according to the present invention, an equipment degradation diagnosis request is input through network 4 from a diagnosis requester and a degradation diagnosis requests handler is selected in accordance with execution condition information of degradation diagnosis specified in respect of at least one degradation diagnosis requests handler and condition information in accordance with which an diagnosis requester requests degradation diagnosis. A request for execution of degradation diagnosis is made to this selected degradation diagnosis requests handler and the results of execution of the degradation diagnosis obtained by the selected degradation diagnosis requests handler are acquired and output through network 4 to the diagnosis requester. In this way, a service can be implemented whereby diagnosis of degradation requested by a diagnosis requester from a diagnostic service provider is performed rapidly and easily at low cost.
摘要:
The object of the present invention is to provide a pressure sensor comprising a pressure sensing element of a plurality of resistors on a semiconductor board, wherein said pressure sensing element is fixed inside the housing firmly and airtightly. A pressure sensor 10 comprising a housing 11 made of metal material, and a pressure sensing element mounted on a semiconductor board 13 positioned in the interior of said housing for sensing pressure, wherein said housing 11 comprises a liquid induction hole 11d, an inner area connecting to said liquid induction hole and having an opening in an upper portion, and an annular protrusion 11g formed in the peripheral of an opening of said liquid induction hole at a bottom portion of said inner area, characterized in that said pressure sensing element 13 is welded airtightly to said protrusion 11g of said housing 11 through a seat 21 comprising an opening 21a at the center thereof formed of a pressure sensing element mounting member 21-1 and a stem connecting member 20d, and a stem 20 having an opening 20d at the center thereof.
摘要:
An image inquiry apparatus includes a plurality of unit inquiry circuits arranged in a matrix of m rows and r stages (each of m and r is an integer more than 1). The plurality of unit inquiry circuits other than the unit inquiry circuits of i-th row and (i+1)-th stage (1≦i≦ a smaller one of m and r, and i is an integer) are connected in series in units of rows. Inputs of the unit inquiry circuits of i-th rows and (i+1)-th stages are respectively connected to inputs of the unit inquiry circuits of i-th rows and i-th stages. Each of the plurality of unit inquiry circuits includes a plurality of pixel processing circuits connected in series, and outputs a calculation data corresponding to a difference between a reference pixel and a retrieval pixel which are both held therein. R summing circuits are respectively provided for the r stages of the matrix. Each of the n summing circuits sums the calculation data supplied from the pixel processing circuits in the corresponding stage to output the summing result.