利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.018 秒)

    Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films
    1.
    发明授权
    Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films 失效
    通过单独进料源气体和生长膜的半导体膜的化学气相沉积方法

    公开(公告)号：US5728425A

    公开(公告)日：1998-03-17

    申请号：US28143

    申请日：1993-03-09

    申请人： Hiroji Ebe ,  Akira Sawada ,  Hiroshi Takigawa

    发明人： Hiroji Ebe ,  Akira Sawada ,  Hiroshi Takigawa

    IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  C30B25/02 ,  C30B25/14 ,  H01L21/31

    CPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/4482 ,  C23C16/52 ,  C30B25/02 ,  C30B29/48

    摘要： A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg.sub.1-x Cd.sub.x Te (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or .DELTA.x=0.002) inhomogeneity in composition.

    摘要翻译： 在化合物半导体膜的化学气相沉积（CVD）的过程中，在进料源气体和生长膜之间使用分开的步骤的方法和装置。 在一个实施例中，CVD反应器腔室具有能够改变腔室的体积以控制其中的源气体的压力的活塞。 在源气体由于蒸汽压不足而在不发生CVD的条件下将源气体供给到具有基板的腔室之后，将腔室保持关闭几秒钟，然后由活塞加压以开始CVD。 典型的结果表明，3英寸CdTe晶片上的Hg1-xCdxTe（其中x = 0.2）膜的组成不均匀性仅为1％（或DELTA x = 0.002）。

    Method of (111) group II-VI epitaxial layer grown on (111) silicon substrate
    2.
    发明授权
    Method of (111) group II-VI epitaxial layer grown on (111) silicon substrate 失效
    （111）（111）硅衬底上生长的II-VI族外延层的（111）方法

    公开(公告)号：US5394826A

    公开(公告)日：1995-03-07

    申请号：US139743

    申请日：1993-10-22

    申请人： Hiroji Ebe ,  Akira Sawada

    发明人： Hiroji Ebe ,  Akira Sawada

    IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L21/205 ,  H01L21/36 ,  H01L21/365 ,  H01L31/0264

    CPC分类号： H01L21/02562 ,  C30B25/02 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02609 ,  H01L21/0262 ,  Y10S438/973

    摘要： A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.

    摘要翻译： 在（111）硅衬底上生长的II-VI族外延层具有如II-VI族外延层和硅衬底之间的最小化的晶格失配。 生长的组II-VI外延层在与衬底的界面处还具有（111）面，并且在（111）硅衬底和II-VI族外延层之间的界面处形成30°的面内旋转滑移 层。 上述结构是通过金属有机化学气相沉积法（MOCVD）制备的，其中VI族气源源与II族气体源的摩尔比在生长过程中保持大于15。 （111）硅衬底优选地朝向硅衬底的<1>向上＆lt; 10＆gt;方向错误取向。 当在外延层上生长HgCdTe层时，由此形成的产品可用作单片红外检测器，其中在HgCdTe层中形成多个检测器元件，并且在硅衬底中形成信号处理电路。

    (111) Group II-VI epitaxial layer grown on (111) silicon substrate
    3.
    发明授权
    (111) Group II-VI epitaxial layer grown on (111) silicon substrate 失效
    （111）在（111）硅衬底上生长的II-VI族外延层

    公开(公告)号：US5302232A

    公开(公告)日：1994-04-12

    申请号：US987683

    申请日：1992-12-09

    申请人： Hiroji Ebe ,  Akira Sawada

    发明人： Hiroji Ebe ,  Akira Sawada

    IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L21/205 ,  H01L21/36 ,  H01L21/365 ,  H01L31/0264

    CPC分类号： H01L21/02562 ,  C30B25/02 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02609 ,  H01L21/0262 ,  Y10S438/973

    摘要： A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.

    摘要翻译： 在（111）硅衬底上生长的II-VI族外延层具有如II-VI族外延层和硅衬底之间的最小化的晶格失配。 生长的组II-VI外延层在与衬底的界面处还具有（111）面，并且在（111）硅衬底和II-VI族外延层之间的界面处形成30度的面内旋转滑移 层。 上述结构是通过金属有机化学气相沉积法（MOCVD）制备的，其中VI族气源源与II族气体源的摩尔比在生长过程中保持大于15。 （111）硅衬底优选地朝向硅衬底的<110>方向错误取向。 当在外延层上生长HgCdTe层时，由此形成的产品可用作单片红外检测器，其中在HgCdTe层中形成多个检测器元件，并且在硅衬底中形成信号处理电路。

    Semiconductor device
    4.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20060220001A1

    公开(公告)日：2006-10-05

    申请号：US11366597

    申请日：2006-03-03

    申请人： Ayahito Uetake ,  Hiroji Ebe ,  Kenichi Kawaguchi

    发明人： Ayahito Uetake ,  Hiroji Ebe ,  Kenichi Kawaguchi

    IPC分类号： H01L31/00

    CPC分类号： H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/3218 ,  H01S5/3404 ,  H01S5/3412 ,  H01S5/34373

    摘要： A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.

    摘要翻译： 包括量子点的半导体器件包括具有第一晶格常数的半导体晶体的阻挡层和包含在阻挡层上形成的具有第二晶格常数的半导体晶体的多个量子点的量子点层和形成在阻挡层上的侧阻挡层 具有第三晶格常数的半导体晶体，其形成为与多个量子点的侧面接触，其中阻挡层，量子点和侧阻挡层被构造成使得 第一晶格常数和第二晶格常数具有与第一晶格常数和第三晶格常数的值之差的符号。

    Semiconductor optical device with quantum dots having internal tensile or compressive strain
    6.
    发明授权
    Semiconductor optical device with quantum dots having internal tensile or compressive strain 有权
    具有内部拉伸或压缩应变的量子点的半导体光学器件

    公开(公告)号：US06992320B2

    公开(公告)日：2006-01-31

    申请号：US10644803

    申请日：2003-08-21

    申请人： Hiroji Ebe ,  Yoshiaki Nakata ,  Tomoyuki Akiyama

    发明人： Hiroji Ebe ,  Yoshiaki Nakata ,  Tomoyuki Akiyama

    IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/127 ,  H01S5/3412 ,  Y10S977/774

    摘要： A semiconductor optical device having a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind made of a second semiconductor having a second lattice constant in bulk state smaller than the first lattice constant. The active layer may contain quantum dots of a second kind made of a third semiconductor having a third lattice constant in bulk state larger than the first lattice constant. The quantum dots of the first and second kinds are preferably disposed alternately along the thickness direction between the barrier layers having the first lattice constant.

    摘要翻译： 一种半导体光学器件，具有具有第一晶格常数的第一半导体的表面的衬底; 以及形成在所述基板上的半导体层叠层，所述半导体层叠层具有活性层，所述活性层包含第一种量子点，所述量子点由具有小于所述第一晶格常数的体态的第二晶格常数的第二半导体构成。 有源层可以包含第二种量子点，该量子点由体积状态大于第一晶格常数的第三晶格常数的第三半导体构成。 第一种和第二种的量子点优选沿具有第一晶格常数的阻挡层之间的厚度方向交替布置。

    Quantum dot semiconductor device
    7.
    发明授权
    Quantum dot semiconductor device 有权
    量子点半导体器件

    公开(公告)号：US07829880B2

    公开(公告)日：2010-11-09

    申请号：US12047806

    申请日：2008-03-13

    申请人： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

    发明人： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/5009 ,  H01S2301/04 ,  Y10S438/962

    摘要： A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

    摘要翻译： 量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。 每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于 增益谱在所需的工作温度范围内。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07456422B2

    公开(公告)日：2008-11-25

    申请号：US11366597

    申请日：2006-03-03

    申请人： Ayahito Uetake ,  Hiroji Ebe ,  Kenichi Kawaguchi

    发明人： Ayahito Uetake ,  Hiroji Ebe ,  Kenichi Kawaguchi

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/3218 ,  H01S5/3404 ,  H01S5/3412 ,  H01S5/34373

    摘要： A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.

    摘要翻译： 包括量子点的半导体器件包括具有第一晶格常数的半导体晶体的阻挡层和包含在阻挡层上形成的具有第二晶格常数的半导体晶体的多个量子点的量子点层和形成在阻挡层上的侧阻挡层 具有第三晶格常数的半导体晶体，其形成为与多个量子点的侧面接触，其中阻挡层，量子点和侧阻挡层被构造成使得 第一晶格常数和第二晶格常数具有与第一晶格常数和第三晶格常数的值之差的符号。