公开(公告)号：US20060268467A1

公开(公告)日：2006-11-30

申请号：US11477410

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kivokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kivokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US20060192215A1

公开(公告)日：2006-08-31

申请号：US11279479

申请日：2006-04-12

申请人： Kazuhiko Hayashi ,  Takashi Fukuchi ,  Shinnzo Tsuroi

发明人： Kazuhiko Hayashi ,  Takashi Fukuchi ,  Shinnzo Tsuroi

IPC分类号： H01L33/00

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/3211 ,  H01L27/3269 ,  H01L2924/0002 ,  H05B33/08 ,  H05B33/0896 ,  H01L2924/00

摘要： A light emitting device in accordance with the present invention includes a light emitting element and a light sensor for detecting the luminous intensity of the light emitted from the light emitting element. The light emitting element includes a lower electrode, a light emitting material layer including at least a light emitting layer, and an upper electrode having light transparency, which are formed on a substrate in the named order. One of the lower electrode and the upper electrode acts as a cathode, and the other acts as an anode. The light sensor is formed on the light emitting element. Thus, it is possible to provide the light emitting device so configured to sufficiently prevent the unevenness of luminance and the deterioration in color balance, and to efficiently guide the light emitted from the light emitting element to the light sensor, so as to enable to detect the luminous intensity of the emitted light with high sensitiveness, with a minimized adverse mutual influence between the light emitting element and the light sensor.

摘要翻译： 根据本发明的发光器件包括发光元件和用于检测从发光元件发射的光的发光强度的光传感器。 发光元件包括下电极，至少包括发光层的发光材料层和具有透光性的上电极，其以所述顺序形成在基板上。 下电极和上电极中的一个用作阴极，另一个用作阳极。 光传感器形成在发光元件上。 因此，可以提供如此构造的发光器件，以充分防止亮度的不均匀性和色平衡的劣化，并且有效地将从发光元件发射的光引导到光传感器，以便能够检测 具有高灵敏度的发射光的发光强度，发光元件和光传感器之间的不利相互影响最小化。

公开(公告)号：US20060119982A1

公开(公告)日：2006-06-08

申请号：US11329919

申请日：2006-01-10

申请人： Hiroaki Honjo ,  Tsutomu Ishi ,  Mikiko Saito ,  Shinsaku Saito ,  Tamaki Toba ,  Yoshihiro Nonaka ,  Kazuhiko Hayashi ,  Nobuyuki Ishiwata

发明人： Hiroaki Honjo ,  Tsutomu Ishi ,  Mikiko Saito ,  Shinsaku Saito ,  Tamaki Toba ,  Yoshihiro Nonaka ,  Kazuhiko Hayashi ,  Nobuyuki Ishiwata

IPC分类号： G11B5/147

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3103 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996 ,  Y10T29/49044

摘要： By inserting a first antistripping layer comprising a first non-magnetic layer 22 and a first conductive layer 23 between a first magnetic layer 16 and a magnetic separation layer 13, adhesion between the first conductive layer 23 and the magnetic separation layer 13 is improved to prevent the first magnetic layer 16 from stripping. In addition, by inserting a second antistripping layer comprising a second non-magnetic layer 24 and a second conductive layer 25 between a second magnetic layer 21 and a magnetic gap layer 17, adhesion between the second conductive layer 24 and the magnetic gap layer 17 is improved to prevent the second magnetic layer 25 from stripping.

摘要翻译： 通过在第一磁性层16和磁分离层13之间插入包括第一非磁性层22和第一导电层23的第一抗锯齿层，改善了第一导电层23和磁性分离层13之间的粘附，以防止 来自剥离的第一磁性层16。 此外，通过在第二磁性层21和磁隙层17之间插入包括第二非磁性层24和第二导电层25的第二抗锯齿层，第二导电层24和磁隙层17之间的粘附是 改进以防止第二磁性层25剥离。

公开(公告)号：US07045820B2

公开(公告)日：2006-05-16

申请号：US10085607

申请日：2002-02-27

申请人： Kazuhiko Hayashi ,  Takashi Fukuchi ,  Shinnzo Tsuboi

发明人： Kazuhiko Hayashi ,  Takashi Fukuchi ,  Shinnzo Tsuboi

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/3211 ,  H01L27/3269 ,  H01L2924/0002 ,  H05B33/08 ,  H05B33/0896 ,  H01L2924/00

摘要： A light emitting device in accordance with the present invention includes a light emitting element and a light sensor for detecting the luminous intensity of the light emitted from the light emitting element. The light emitting element includes a lower electrode, a light emitting material layer including at least a light emitting layer, and an upper electrode having light transparency, which are formed on a substrate in the named order. One of the lower electrode and the upper electrode acts as a cathode, and the other acts as an anode. The light sensor is formed on the light emitting element.Thus, it is possible to provide the light emitting device so configured to sufficiently prevent the unevenness of luminance and the deterioration in color balance, and to efficiently guide the light emitted from the light emitting element to the light sensor, so as to enable to detect the luminous intensity of the emitted light with high sensitiveness, with a minimized adverse mutual influence between the light emitting element and the light sensor.

摘要翻译： 根据本发明的发光器件包括发光元件和用于检测从发光元件发射的光的发光强度的光传感器。 发光元件包括下电极，至少包括发光层的发光材料层和具有透光性的上电极，其以所述顺序形成在基板上。 下电极和上电极中的一个用作阴极，另一个用作阳极。 光传感器形成在发光元件上。 因此，可以提供如此构造的发光器件，以充分防止亮度的不均匀性和色平衡的劣化，并且有效地将从发光元件发射的光引导到光传感器，以便能够检测 具有高灵敏度的发射光的发光强度，发光元件和光传感器之间的不利相互影响最小化。

公开(公告)号：US06674615B2

公开(公告)日：2004-01-06

申请号：US09734615

申请日：2000-12-13

申请人： Kazuhiko Hayashi

发明人： Kazuhiko Hayashi

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996

摘要： A magneto-resistance effect head (MR head) is provided, wherein a lower electrode-cum-magnetic shield layer is provided on a substrate, a magnetic gap adjusting layer is provided thereon, a magneto-resistance effect element (MR element) is provided on the magnetic gap adjusting layer, and an upper electrode-cum-magnetic shield layer is provided on the MR element. A pair of vertical bias layers is provided at both sides of the MR element. In the MR element, a lower layer, a free magnetic layer, a nonmagnetic layer, a fixed magnetic layer, and a fixing layer are provided in order from the magnetic gap adjusting layer side. By providing the magnetic gap adjusting layer between the lower electrode-cum-magnetic shield layer and the free magnetic layer, the free magnetic layer can be made to be sufficiently separate from the lower electrode-cum-magnetic shield layer. Thereby, since a sufficient leak magnetic field can be applied to the free magnetic layer, the head reproduction output is improved.

摘要翻译： 提供一种磁阻效应头（MR磁头），其中在基片上设置下电极和磁屏蔽层，在其上提供磁隙调节层，提供磁阻效应元件（MR元件） 并且在MR元件上设置上电极和磁屏蔽层。 在MR元件的两侧设有一对垂直偏置层。 在MR元件中，从磁隙调整层侧开始依次设置下层，自由磁性层，非磁性层，固定磁性层和固定层。 通过在下电极暨磁屏蔽层和自由磁性层之间设置磁隙调节层，可以使自由磁性层与下电极暨磁屏蔽层充分分离。 因此，由于可以向自由磁性层施加足够的泄漏磁场，所以磁头重放输出得到改善。

公开(公告)号：US06538861B1

公开(公告)日：2003-03-25

申请号：US09597458

申请日：2000-06-19

申请人： Kazuhiko Hayashi ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Tamaki Toba ,  Hisanao Tsuge ,  Atsushi Kamijo

发明人： Kazuhiko Hayashi ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Tamaki Toba ,  Hisanao Tsuge ,  Atsushi Kamijo

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  H01F10/3254

摘要： A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of a free layer, a barrier layer and a fixing layer, which are sequentially formed and laminated on the lower electrode. Herein, the ferromagnetic tunnel junction film is designed to avoid electrostatic destruction in manufacture by prescribed measures. For example, the barrier layer is reduced in thickness at a terminal portion as compared with a center portion. Or, the barrier layer has a defect at the terminal portion. In addition, it is possible to provide a conductor in connection with the barrier layer in proximity to its terminal portion. Further, it is possible to attach re-adhesive substance, which is produced by milling for patterning of the ferromagnetic tunnel junction film, to a specific terminal surface of the ferromagnetic tunnel junction film which is opposite to an ABS plane. Those measures provide a bypass allowing overcurrent release between the free layer and fixing layer. Moreover, adjustment milling or plasma oxidation is employed to control an amount of the re-adhesive substance being attached to the terminal surface of the ferromagnetic tunnel junction film. Thus, by adequately optimizing the amount of the re-adhesive substance, it is possible to improve yield in manufacturing the magnetoresistive heads.

摘要翻译： 使用布置在下电极和上电极之间的铁磁隧道结（MTJ）膜来构造其磁阻效应的操作的磁阻头。 铁磁隧道结膜基本上是使用一组自由层，阻挡层和固定层构成的，它们依次形成并层压在下电极上。 这里，铁磁隧道结膜被设计成通过规定的措施避免制造中的静电破坏。 例如，与中心部分相比，阻挡层在端子部分的厚度减小。 或者，阻挡层在端子部分具有缺陷。 此外，可以在其端子部分附近提供与阻挡层相关的导体。 此外，可以将通过研磨制造的用于图案化铁磁性隧道结膜的再粘合物质附着到与ABS平面相反的铁磁性隧道结膜的特定末端表面。 这些措施提供了允许在自由层和固定层之间过电流释放的旁路。 此外，调整研磨或等离子体氧化被用于控制附着到铁磁性隧道结膜的终端表面上的再粘合物质的量。 因此，通过充分优化再粘合物质的量，可以提高制造磁阻磁头的成品率。

公开(公告)号：US06452762B1

公开(公告)日：2002-09-17

申请号：US09535742

申请日：2000-03-27

申请人： Kazuhiko Hayashi ,  Masafumi Nakada

发明人： Kazuhiko Hayashi ,  Masafumi Nakada

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

摘要： The present invention provides a magneto-resistive (MR) element comprising: a first magnetic layer 1 provided on a substrate; a non-magnetic layer 3 arranged to be in contact with the first magnetic layer; and a second magnetic layer 2 arranged to be in contact with the non-magnetic layer; wherein sense current flowing in the first and the second magnetic layer is changed by a resistance change according to an external magnetic field, and a sense current flowing distance in the first magnetic layer and/or a sense current flowing distance in the second magnetic layer is longer than a sense current flowing distance in a superimposed portion of the first magnetic layer, the non-magnetic layer, and the second magnetic layer.

摘要翻译： 本发明提供了一种磁阻（MR）元件，包括：设置在基板上的第一磁性层1; 布置成与第一磁性层接触的非磁性层3; 以及布置成与非磁性层接触的第二磁性层2; 其中在第一和第二磁性层中流动的感测电流根据外部磁场的电阻变化而改变，并且第二磁性层中的第一磁性层中的感测电流流动距离和/或感测电流流动距离为 比在第一磁性层，非磁性层和第二磁性层的叠加部分中的感测电流流动距离长。

公开(公告)号：US06403820B1

公开(公告)日：2002-06-11

申请号：US09762566

申请日：2001-02-08

申请人： Kazuhiko Hayashi ,  Tetsuo Kamimoto ,  Hisashi Murase ,  Ryoji Kimura

发明人： Kazuhiko Hayashi ,  Tetsuo Kamimoto ,  Hisashi Murase ,  Ryoji Kimura

IPC分类号： C07F902

CPC分类号： C07F9/025 ,  C07F9/12

摘要： The process for producing a low acid value phosphoric ester of the present invention is characterized by comprising treating a phosphoric ester having an acid value with an organic ortho-acid ester. The phosphoric ester preferably has a specific structure. The organic ortho-acid ester is preferably an ester of orthoformic acid, orthoacetic acid or orthopropionic acid with an alkyl group having 1 to 4 carbon atoms.

摘要翻译： 本发明的低酸值磷酸酯的制造方法的特征在于，使用有机原酸酯处理具有酸值的磷酸酯。 磷酸酯优选具有特定结构。 有机原酸酯优选为具有1至4个碳原子的烷基的正己酸，原乙酸或邻丙酸的酯。

公开(公告)号：US06338744B1

公开(公告)日：2002-01-15

申请号：US09481573

申请日：2000-01-11

申请人： Yoshikuni Tateyama ,  Katsumi Yamamoto ,  Hiroshi Kato ,  Kazuhiko Hayashi ,  Hiroyuki Kono

发明人： Yoshikuni Tateyama ,  Katsumi Yamamoto ,  Hiroshi Kato ,  Kazuhiko Hayashi ,  Hiroyuki Kono

IPC分类号： B24D302

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： Provided is a high purity polishing slurry which provides a material to be polished with a high scratch resistance and has a high polishing efficiency and which less contaminates the material to be polished. The polishing slurry comprises water and silica particles dispersed in water, wherein the above silica particles have an average primary particle size of 50 to 300 nm and a refractive index of 1.41 to 1.44 and are synthesized in a liquid phase and produced without passing through a drying step; and the K value is 5×10−6 mol/m2 or more. Further, a polishing process for a semiconductor wafer using the above polishing slurry is provided.

摘要翻译： 提供了一种高纯度抛光浆料，其提供具有高耐刮擦性并且具有高抛光效率并且较少污染待抛光材料的待抛光材料。 抛光浆料包含分散在水中的水和二氧化硅颗粒，其中上述二氧化硅颗粒的平均一次粒径为50〜300nm，折射率为1.41〜1.44，合成液相，不经过干燥 步; K值为5×10 -6 mol / m 2以上。 此外，提供了使用上述抛光浆料的半导体晶片的抛光工艺。

公开(公告)号：US06063491A

公开(公告)日：2000-05-16

申请号：US38093

申请日：1998-03-11

申请人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara

发明人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/18 ,  H01F10/28 ,  H01F10/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： H01L43/08 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.

摘要翻译： 本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜 的薄磁性膜，薄的非磁性膜被插入其间。 由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。 薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。 超晶格结构中的原子数相对于Co的比例设定为1.0以上。 即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。