-
公开(公告)号：US08471363B2
公开(公告)日：2013-06-25
申请号：US13246065
申请日：2011-09-27
申请人： Kazushi Asami , Yasuhiro Kitamura
发明人： Kazushi Asami , Yasuhiro Kitamura
IPC分类号： H01L21/02 , H01L21/8222
CPC分类号： H01L28/91 , H01L21/76898 , H01L23/481 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.
摘要翻译： 半导体器件包括衬底，第一单导体，单绝缘体和第二单导体。 衬底包括彼此相邻定位的第一和第二区域。 第一区域具有盲孔，每个盲孔在基板的前表面上具有开口。 第二区域具有穿透基板的通孔。 每个盲孔的宽度小于通孔的宽度。 第一单导体形成在基板的前表面上，使得每个盲孔的内表面和通孔的内表面被第一单导体覆盖。 单个绝缘体形成在第一单个导体上。 第二单导体形成在单个绝缘体上并且电绝缘形成第一单导体。
-
公开(公告)号：US08461052B2
公开(公告)日：2013-06-11
申请号：US13073173
申请日：2011-03-28
申请人： Junji Oohara , Kazushi Asami
发明人： Junji Oohara , Kazushi Asami
IPC分类号： H01L21/461
CPC分类号： H01L21/30655 , H01J37/321 , H01J37/32972 , H01L22/26
摘要： In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.
摘要翻译： 在用于形成在衬底中具有M个不同宽度的沟槽的工艺中，交替执行钝化步骤和蚀刻步骤。 钝化步骤包括通过将在腔室中引入的气体转化为等离子体来在沟槽的底部沉积钝化层。 蚀刻步骤包括去除沟槽底部的钝化层并向底部施加反应离子蚀刻以增加沟槽的深度。 当去除具有第N个最小宽度的沟槽底部的钝化层时，蚀刻步骤还包括将反应离子蚀刻的能量设定为预定值。 该值允许具有第N个最小宽度的沟槽的蚀刻量等于或大于具有（N + 1）个最小宽度的沟槽的蚀刻量。
-
公开(公告)号：US08256289B2
公开(公告)日：2012-09-04
申请号：US12923971
申请日：2010-10-19
IPC分类号： G01P9/04
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.
摘要翻译： 角速率传感器包括具有形成x-y平面的第一和第二表面的压电膜，并且当角速率传感器经历围绕x方向的旋转运动时，利用科里奥利力作用的扰动质量相干振动的弹性声波。 第一弹性声波通过驱动传感器在压电膜中激发，并且由与角速率传感器本身的旋转运动的角速度成比例的科里奥利力产生的第二弹性声波由检测换能器检测。 角速率传感器还包括至少第一电极，其设置在压电膜的第一表面上，用于在其中激发第一弹性声波的膜的下表面处排出由于压电效应引起的表面电荷。
-
公开(公告)号：US20080028855A1
公开(公告)日：2008-02-07
申请号：US11878441
申请日：2007-07-24
IPC分类号： G01C19/00
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.
摘要翻译： 角速率传感器包括具有形成x-y平面的第一和第二表面的压电膜，并且当角速率传感器经历围绕x方向的旋转运动时，利用科里奥利力作用的扰动质量相干振动的弹性声波。 第一弹性声波通过驱动传感器在压电膜中激发，并且由与角速率传感器本身的旋转运动的角速度成比例的科里奥利力产生的第二弹性声波由检测换能器检测。 角速率传感器还包括至少第一电极，其设置在压电膜的第一表面上，用于在其中激发第一弹性声波的膜的下表面处排出由于压电效应引起的表面电荷。
-
15.发明授权公开(公告)号：US07105902B2
公开(公告)日：2006-09-12
申请号：US10752588
申请日：2004-01-08
申请人： Kazushi Asami , Kazuhiko Kano , Tetsuo Y Shioka
发明人： Kazushi Asami , Kazuhiko Kano , Tetsuo Y Shioka
IPC分类号： H01L29/82
CPC分类号： G02B26/0841
摘要： An optical device includes a semiconductor substrate having an opening, a support member disposed on the substrate, and a movable portion disposed on the opening of the substrate. The movable portion is supported by the support member so that the movable portion is movable. The device has a large scanning angle. Further, the device can scan widely at any frequency.
摘要翻译： 光学装置包括具有开口的半导体衬底，设置在衬底上的支撑构件和设置在衬底的开口上的可移动部分。 可移动部分由支撑构件支撑，使得可移动部分是可移动的。 该装置具有较大的扫描角度。 此外，该设备可以以任何频率广泛扫描。
-
公开(公告)号：US06549015B2
公开(公告)日：2003-04-15
申请号：US09735460
申请日：2000-12-14
申请人： Kazuyuki Horie , Kiwamu Naito , Hayaki Teramoto , Tatsuhiko Nonoyama , Kazushi Asami , Takahiko Yoshida , Hiroshi Ueda
发明人： Kazuyuki Horie , Kiwamu Naito , Hayaki Teramoto , Tatsuhiko Nonoyama , Kazushi Asami , Takahiko Yoshida , Hiroshi Ueda
IPC分类号： G01N27416
CPC分类号： G01N33/2876
摘要： In a pair of electrodes where a potential difference is changed in accordance with acidity or basicity of oil, a reference electrode is made of cobalt or a cobalt alloy, and a sensitive electrode is made of tungsten or a tungsten alloy. The sensitive electrode is used in combination with the reference electrode. Accordingly, it is possible to provide a pair of electrodes for detecting the acidity or the basicity of the oil which use a novel electrode material not hazardous to the environment and at the same time, suited for use in a semiconductor fabrication technique.
摘要翻译： 在根据油的酸度或碱度改变电位差的一对电极中，参考电极由钴或钴合金制成，敏感电极由钨或钨合金制成。 敏感电极与参比电极组合使用。 因此，可以提供一对电极，用于检测使用对环境无害的新型电极材料的油的酸度或碱度，并且同时适用于半导体制造技术。
-
公开(公告)号：US06010919A
公开(公告)日：2000-01-04
申请号：US832231
申请日：1997-04-03
IPC分类号： H01L41/311 , B81C1/00 , C23F4/00 , G01C19/56 , G01C19/5621 , G01C19/5628 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L41/08 , H01L41/22 , H01L49/00 , H01L21/00
CPC分类号： G01C19/5628 , B81C1/00626 , G01C19/5621 , H01L21/31138 , B81B2201/0235 , B81C2201/0132
摘要： A manufacturing method of semiconductor devices adaptable for use in microelectronics devices such as angular-rate sensors includes the steps of preparing a silicon wafer having a lamination of a p-type silicon substrate and an n-type epitaxial layer as formed thereon, defining on a specified surface of the wafer a plurality of recess portions each having a reduced-thickness portion on the opposite surface side which consists of the epitaxial layer, forming plural through-going holes in each reduced-thickness portion by causing a gel- or oil-like coolant medium made of a thermally conductive material to be disposed in contact with one surface of the reduced-thickness portion of the silicon substrate and by effecting dry etching of certain region from the other surface of the reduced-thickness portion, and thereafter removing the medium. This medium serves to absorb and dissipate heat generated at the reduced-thickness portion during the dry etching.
摘要翻译： 适用于诸如角速率传感器的微电子器件的半导体器件的制造方法包括以下步骤：制备具有在其上形成的p型硅衬底和n型外延层的叠层的硅晶片， 晶片的指定表面具有多个凹部，每个凹部具有由外延层组成的相对表面侧上的厚度减小的部分，通过使凝胶或油状形成在每个厚度减小的部分中形成多个贯通孔 由导热材料制成的冷却剂介质被设置成与硅衬底的厚度减小的部分的一个表面接触，并且通过对厚度较小的部分的另一个表面进行某些区域的干蚀刻，然后除去介质 。 该介质用于吸收和散发在干蚀刻期间在减薄厚度部分产生的热量。
-
公开(公告)号：US06580600B2
公开(公告)日：2003-06-17
申请号：US10157197
申请日：2002-05-30
申请人： Inao Toyoda , Hajime Matsuhashi , Kazushi Asami
发明人： Inao Toyoda , Hajime Matsuhashi , Kazushi Asami
IPC分类号： H01G900
CPC分类号： G01N27/225 , Y10T29/417
摘要： A capacitance type humidity detecting sensor has two electrodes opposing each other with a gap interposed therebetween to form a capacitor on a silicon substrate with a silicon oxide film formed on a surface thereof. A moisture-sensitive film is formed so as to cover the two electrodes with a silicon nitride film interposed therebetween. The silicon nitride film protects the two electrodes from moisture passing through the moisture-sensitive film. The capacitance formed between the two electrodes changes in accordance with ambient humidity. A switched capacitor circuit formed in a circuit element portion processes a signal indicative of a change in the capacitance formed between the two electrodes.
-
公开(公告)号：US6116087A
公开(公告)日：2000-09-12
申请号：US208451
申请日：1998-12-10
IPC分类号： G01C19/56 , G01C19/5607 , G01P9/04
CPC分类号： G01C19/5614 , G01C19/5621
摘要： An angular velocity sensor comprises a driving element, a detecting element, and a feedback element, all of which are disposed on an element forming face of an oscillator. An electrostatic capacitance of the feedback element is set to be equal to that of the detecting element. As a result, a synchronous detection circuit can reduce the offset signal due to a phase difference between signals from the feedback element and the detecting element.
摘要翻译： 角速度传感器包括驱动元件，检测元件和反馈元件，它们都设置在振荡器的元件形成面上。 将反馈元件的静电电容设定为与检测元件相同。 结果，同步检测电路可以由于来自反馈元件和检测元件的信号之间的相位差而减小偏移信号。
-
公开(公告)号：US5536364A
公开(公告)日：1996-07-16
申请号：US253704
申请日：1994-06-03
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/3065 , H01L21/3081 , Y10S438/945
摘要： A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode-coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing in that an etchant is a mixed gas of sulfur hexafluoride and oxygen and an etching mask covering the substrate, except for a portion where the recess or opening is to be formed, is made of chromium or a chromium compound. Preferably the distance between the electrodes is 10 to 30 mm, the volume ratio of sulfur hexafluoride to oxygen is 90:10 to 60:40, the pressure of the etchant gas is 0.15 to 0.4 Torr (20 to 53 Pa), and the temperature of the substrate is not less than 40.degree. C.
摘要翻译： 一种等离子体蚀刻工艺，用于通过在阳极耦合的平面型等离子体蚀刻装置中的一对电极之间产生等离子体并且利用等离子体蚀刻位于其中一个电极上的硅衬底，在硅衬底上形成凹部或开口， 其特征在于，蚀刻剂是六氟化硫和氧气的混合气体，除了要形成凹部或开口的部分之外，覆盖基板的蚀刻掩模由铬或铬化合物制成。 优选地，电极之间的距离为10〜30mm，六氟化硫与氧的体积比为90:10〜60:40，蚀刻剂气体的压力为0.15〜0.4乇（20〜53Pa），温度 的基材不低于40℃
-
-
-
-
-
-
-
-
-
搜索结果
25 条记录 (耗时 0.044 秒)