公开(公告)号：US06783118B2

公开(公告)日：2004-08-31

申请号：US09919633

申请日：2001-07-31

申请人： Visweswaren Sivaramakrishnan ,  John M. White

发明人： Visweswaren Sivaramakrishnan ,  John M. White

IPC分类号： B01F304

CPC分类号： C23C16/4481 ,  B01F3/022 ,  Y10S261/65

摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.

摘要翻译： 本公开涉及一种蒸发器阀，其接收载气和加压液体并形成载气和汽化液体的混合物。 内腔通过载体孔接收载气，液体通过液体孔接收，并且混合气体和蒸气经由第三孔排出空腔。 邻近液体孔设置的可移动隔膜形成具有压力梯度的蒸发区域。 通过该压力梯度的液体由于膨胀而蒸发。 通过利用响应于液体流速监测器的反馈控制电路来控制隔膜位置，可以独立于载气流量来控制液体流速。

公开(公告)号：US06224681B1

公开(公告)日：2001-05-01

申请号：US08574999

申请日：1995-12-19

申请人： Visweswaren Sivaramakrishnan ,  John M. White

发明人： Visweswaren Sivaramakrishnan ,  John M. White

IPC分类号： C23C1600

CPC分类号： C23C16/4481 ,  B01F3/022 ,  Y10S261/65

摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.

摘要翻译： 本公开涉及一种蒸发器阀，其接收载气和加压液体并形成载气和汽化液体的混合物。 内腔通过载体孔接收载气，液体通过液体孔接收，并且混合气体和蒸气经由第三孔排出空腔。 邻近液体孔设置的可移动隔膜形成具有压力梯度的蒸发区域。 通过该压力梯度的液体由于膨胀而蒸发。 通过利用响应于液体流速监测器的反馈控制电路来控制隔膜位置，可以独立于载气流量来控制液体流速。

公开(公告)号：US6132517A

公开(公告)日：2000-10-17

申请号：US804505

申请日：1997-02-21

申请人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Kramadhati V. Ravi

发明人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Kramadhati V. Ravi

IPC分类号： H01L21/677 ,  C23C14/56 ,  C23C16/458 ,  H01L21/02 ,  H01L21/205 ,  H01L21/683 ,  C23C16/00

CPC分类号： H01L21/6831 ,  C23C14/568 ,  C23C16/4586

摘要： A dual wafer processing apparatus (4) includes a chamber housing (14) defining an interior and having upper, lower and central portions (18, 20, 16). An electrostatic chuck (34) has electrostatic chucking surfaces (38, 40) on opposite sides. The chuck is rotatably mounted within the chamber housing so that the chucking surfaces face the upper and lower portions of the chamber housing. After a wafer (36) is positioned on a chucking surface, electrostatic forces are used to maintain the wafer secured to the chucking surface. The chuck is then rotated 180.degree. to permit placement of a second wafer on the second chucking surface. Processing of the two wafers occurs simultaneously. Electrostatic chucking surfaces could be replaced by mechanical wafer clamps.

摘要翻译： 双晶片处理设备（4）包括限定内部并具有上部，下部和中心部分（18,20,16）的腔室壳体（14）。 静电吸盘（34）在相对侧具有静电吸附表面（38,40）。 卡盘可旋转地安装在腔室壳体内，使得卡盘表面面对腔室壳体的上部和下部。 在将晶片（36）定位在卡盘表面上之后，使用静电力来保持晶片固定在卡盘表面上。 然后将卡盘旋转180°以允许将第二晶片放置在第二卡盘表面上。 两个晶片的处理同时发生。 静电吸盘表面可以用机械晶片夹来代替。

公开(公告)号：US6063198A

公开(公告)日：2000-05-16

申请号：US9907

申请日：1998-01-21

申请人： Won Bang ,  Visweswaren Sivaramakrishnan ,  Estela Guijosa

发明人： Won Bang ,  Visweswaren Sivaramakrishnan ,  Estela Guijosa

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/44 ,  Y10T137/1692 ,  Y10T137/1714 ,  Y10T137/1729

摘要： The present invention provides an improved device, system, and method for handling accidental explosions in a substrate processing chambers typically used in chemical vapor deposition (CVD). In particular, the invention channels the force from an explosion into alternate pathways leading away from the substitute processing chamber. In one embodiment, the high pressure release device for a semiconductor manufacturing system comprises of a diaphragm adapted to burst above a predetermined pressure. When installed in the system, the diaphragm is in fluid contact with the substrate processing chamber and covers the entrance to an exhaust passage which channels excess pressure away from the chamber.

摘要翻译： 本发明提供一种用于处理通常用于化学气相沉积（CVD）的衬底处理室中的意外爆炸的改进的装置，系统和方法。 特别地，本发明将来自爆炸的力引导到远离替代处理室的替代路径。 在一个实施例中，用于半导体制造系统的高压释放装置包括适于突发超过预定压力的隔膜。 当安装在系统中时，隔膜与基板处理室流体接触并且覆盖排出通道的入口，该排气通道将过大的压力从室引导出来。

公开(公告)号：US5925189A

公开(公告)日：1999-07-20

申请号：US568193

申请日：1995-12-06

申请人： Chau Nguyen ,  Visweswaren Sivaramakrishnan

发明人： Chau Nguyen ,  Visweswaren Sivaramakrishnan

IPC分类号： C23C16/448 ,  C23C16/00

CPC分类号： C23C16/448 ,  C23C16/4481 ,  Y10T137/8593

摘要： The present invention recognizes that the build-up of residue in a metal alloy injection valve used to inject a liquid phosphorous precursor compound is due to the nickel in the alloy affecting the liquid phosphorous precursor compound. The invention thus provides components manufactured of an alloy having a low nickel content, preferably less than 5% nickel, and more preferably less than 1%. In an additional aspect of the invention, the alloy is provided with a higher chromium content, preferably at least 15% chromium, more preferably 16-27%.

公开(公告)号：US09255346B2

公开(公告)日：2016-02-09

申请号：US13483002

申请日：2012-05-29

申请人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Bozena Kaszuba ,  Quoc Vinh Truong ,  Jean R. Vatus

发明人： Visweswaren Sivaramakrishnan ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Quoc Vinh Truong ,  Jean R. Vatus

IPC分类号： C30B21/02 ,  C30B29/06 ,  C30B25/16 ,  H01L21/02

CPC分类号： C30B25/14 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1804

摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

摘要翻译： 通过在具有交叉流沉积的硅前体耗尽模式中通过外延沉积沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于交叉流处理的歧管。 此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。 载体和基底可以被配置用于在基底的两侧上沉积 - 在两侧上具有释放层的基底和载体构造成在基底的两个表面上具有相等的工艺气流。 高体积可以由包括多个微型间歇反应器的沉积系统来解决。

公开(公告)号：US20130213574A1

公开(公告)日：2013-08-22

申请号：US13676820

申请日：2012-11-14

申请人： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： B08B7/00

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US07947611B2

公开(公告)日：2011-05-24

申请号：US12170248

申请日：2008-07-09

申请人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

发明人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。

公开(公告)号：US20110104400A1

公开(公告)日：2011-05-05

申请号：US12987688

申请日：2011-01-10

申请人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Hyoung-Chan Ha ,  Sudha Rathi ,  Derek R. Witty ,  Chiu Chan ,  Sohyun Park ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Hichem M'Saad

IPC分类号： C23C26/00 ,  H05H1/24

CPC分类号： H01L21/02115 ,  C23C16/045 ,  C23C16/26 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间​​以从中除去颗粒。

公开(公告)号：US07410916B2

公开(公告)日：2008-08-12

申请号：US11562021

申请日：2006-11-21

申请人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

发明人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。