公开(公告)号：US08864933B2

公开(公告)日：2014-10-21

申请号：US12908698

申请日：2010-10-20

申请人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

发明人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

IPC分类号： C23F1/08 ,  H01L21/316 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/316 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/6715

摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.

摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。

公开(公告)号：US07926444B2

公开(公告)日：2011-04-19

申请号：US11585863

申请日：2006-10-25

申请人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

发明人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

IPC分类号： B05B5/025 ,  B05C11/02

CPC分类号： H01L21/6715

摘要： It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.

摘要翻译： 本发明的目的是提供一种形成具有均匀厚度的薄膜的方法，以便遵循待加工晶片的表面的粗糙度，并提供用于该方法的成膜装置。 成膜装置包括用于接收晶片并将晶片与空气隔离的处理室; 用于将溶剂气体供给到处理室中的溶剂气体供给部; 用于可旋转地保持晶片的卡盘，使得基板的朝下的表面是其上形成有薄膜的表面; 涂料溶液供给部，其将作为带电粒子的雾的涂布溶液供给到所述晶片的表面; 以及用于对与晶粒的电荷相反的电位对晶片充电的充电部分。

公开(公告)号：US07497908B2

公开(公告)日：2009-03-03

申请号：US10875075

申请日：2004-06-23

申请人： Tsuyoshi Mizuno ,  Yuuichi Mikata ,  Kimihide Saito

发明人： Tsuyoshi Mizuno ,  Yuuichi Mikata ,  Kimihide Saito

IPC分类号： B05C5/02

CPC分类号： H01L21/6715

摘要： Film coating unit has a substrate holder for holding a wafer, a coating solution discharge nozzle, and anti-drying boards opposed to a surface of the wafer. The coating solution is applied to the surface of the wafer in a direction from a front end toward a rear end of the wafer while relatively moving the substrate holder with respect to the coating solution discharge nozzle. During that time, the anti-drying boards are disposed at height of maximum 2 mm from the surface of the wafer so as to form dense atmosphere of a solvent between the surface of the wafer and the anti-drying board. Thereby the coating solution on or over the surface of the wafer is restrained from being dried and a coating film is formed with even thickness on or over the surface of the wafer.

摘要翻译： 薄膜涂布单元具有用于保持晶片的基板保持器，涂布液排出喷嘴和与晶片的表面相对的防干燥板。 在将基板保持件相对于涂布液排出喷嘴相对移动的同时，将涂布液从晶片的前端朝向后端的方向施加到晶片的表面。 在此期间，防干燥板设置在与晶片表面最大2mm的高度处，以在晶片表面和防干燥板之间形成致密的溶剂气氛。 由此，抑制晶片表面上或上方的涂层溶液的干燥，并且在晶片的表面上或上方形成均匀厚度的涂膜。

公开(公告)号：US20070116881A1

公开(公告)日：2007-05-24

申请号：US11585863

申请日：2006-10-25

申请人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

发明人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

IPC分类号： B05D1/02 ,  H05C1/00 ,  B05D1/04 ,  B05B5/025

CPC分类号： H01L21/6715

摘要： It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.

摘要翻译： 本发明的目的是提供一种形成具有均匀厚度的薄膜的方法，以便遵循待加工晶片的表面的粗糙度，并提供用于该方法的成膜装置。 成膜装置包括用于接收晶片并将晶片与空气隔离的处理室; 用于将溶剂气体供给到处理室中的溶剂气体供给部; 用于可旋转地保持晶片的卡盘，使得基板的朝下的表面是其上形成有薄膜的表面; 涂料溶液供给部，其将作为带电粒子的雾的涂布溶液供给到所述晶片的表面; 以及用于对与晶粒的电荷相反的电位对晶片充电的充电部分。

公开(公告)号：US06878401B2

公开(公告)日：2005-04-12

申请号：US10255581

申请日：2002-09-27

申请人： Kazuhiro Nishijima ,  Tsuyoshi Mizuno

发明人： Kazuhiro Nishijima ,  Tsuyoshi Mizuno

IPC分类号： H01L21/00 ,  B05D1/02

CPC分类号： H01L21/6715

摘要： A specific amount of a processing solution is supplied on a wafer by spraying the processing solution from a first end (tip) of a nozzle. The solution surface of the processing solution remaining in the nozzle is sucked back to a second end side of the nozzle by aspirating the remaining processing solution to the second end side. The first end of the nozzle is then soaked into a fluid. The processing solution remaining in the nozzle is aspirated to the second end side to aspirate a specific amount of the fluid into the first end of the nozzle for further sucking back the solution surface of the processing solution to the second end side, thus the solution surface of the processing solution being not touching the fluid.

摘要翻译： 通过从喷嘴的第一端（尖端）喷射处理溶液，在晶片上提供特定量的处理溶液。 残留在喷嘴中的处理溶液的溶液表面通过将剩余的处理溶液吸入第二端侧被吸回到喷嘴的第二端侧。 然后将喷嘴的第一端浸入流体中。 将残留在喷嘴中的处理液吸入第二端侧，将特定量的流体吸入喷嘴的第一端，以进一步将处理溶液的溶液表面吸回到第二端侧，从而溶液表面 的处理溶液不接触流体。

公开(公告)号：US4252480A

公开(公告)日：1981-02-24

申请号：US35901

申请日：1979-05-03

申请人： Tsuyoshi Mizuno ,  Shigetada Yoneyama

发明人： Tsuyoshi Mizuno ,  Shigetada Yoneyama

IPC分类号： B23B51/04 ,  B23C5/10 ,  B23C5/22 ,  B23B51/00 ,  B26D1/12

CPC分类号： B23C5/1027 ,  B23B51/048 ,  B23C5/2221 ,  B23C2200/0483 ,  Y10T407/1948 ,  Y10T407/23 ,  Y10T408/905

摘要： Improved throw away insert and end mills suitable for use with such an insert. The throw away insert has cutting edges which have a convex arcuate shape and have an identical radius of curvature larger than that of the circle circumscribing it at the noses thereof.

摘要翻译： 改进的抛弃刀片和端铣刀适用于这种刀片。 丢弃刀片具有切割边缘，其具有凸形的弓形形状，并且具有与在其鼻部处限定的圆的曲率半径相同的曲率半径。

公开(公告)号：US08815112B2

公开(公告)日：2014-08-26

申请号：US13223543

申请日：2011-09-01

申请人： Tsuyoshi Mizuno ,  Hiromitsu Namba ,  Yuichiro Morozumi ,  Shingo Hishiya ,  Katsushige Harada ,  Fumiaki Hayase

发明人： Tsuyoshi Mizuno ,  Hiromitsu Namba ,  Yuichiro Morozumi ,  Shingo Hishiya ,  Katsushige Harada ,  Fumiaki Hayase

IPC分类号： C25F3/00 ,  C23F1/08 ,  H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC分类号： C23F1/08 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/6708 ,  H01L21/68785 ,  H01L21/68792

摘要： Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.

摘要翻译： 公开了一种用于处理包括第一工艺和第二工艺的衬底的方法。 第一种方法包括通过可旋转地安装的支撑单元在其前表面和后表面上支撑由含钛膜形成的基板; 与支撑单元一起旋转基板; 并将含有氢氟酸的第一处理液体供给到所述基板的后表面，由此用所述第一处理液处理所述基板的后表面。 第二种方法包括在第一工艺完成之后，将含有氨过氧化氢混合物的第二处理液体供应到衬底的后表面，由此用第二处理液处理衬底的后表面。

公开(公告)号：US07968468B2

公开(公告)日：2011-06-28

申请号：US11562909

申请日：2006-11-22

申请人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

发明人： Shouichi Terada ,  Tsuyoshi Mizuno ,  Takeshi Uehara

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC分类号： H01L21/316 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/6715

摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.

摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。

公开(公告)号：US20070251449A1

公开(公告)日：2007-11-01

申请号：US10574547

申请日：2004-10-01

申请人： Tsuyoshi Mizuno ,  Kimihide Saito ,  Yuuichi Mikata

发明人： Tsuyoshi Mizuno ,  Kimihide Saito ,  Yuuichi Mikata

IPC分类号： H01L21/31 ,  H01L21/30 ,  H01L21/312

CPC分类号： H01L21/02282 ,  G03F7/162 ,  H01L21/312 ,  H01L21/6715

摘要： The object of the present invention is to assuredly merge adjacent coating liquid lines when a coating liquid is applied on a surface of a substrate by a so-called scan coating. The coating is performed while the wafer W is oriented to an orientation such that the scanning direction of the coating nozzle liquid 5 crosses at the dicing lines D formed on the wafer W. After completion of the application, the wafer W is returned to the original orientation and thereafter the wafer W is unloaded from a coating film forming apparatus. The coating film forming apparatus stores a plurality of recipes defining coating conditions for each kind of wafer W. The coating conditions defined by the recipes include the orientation of the wafer W. The orientation of the wafer W is automatically set based on the selected recipe.

摘要翻译： 本发明的目的是通过所谓的扫描涂层将涂布液施加在基板的表面上时，确保合并相邻的涂布液体线。 在将晶片W取向为使得涂布喷嘴液体5的扫描方向与形成在晶片W上的切割线D交叉的取向的同时进行涂布。在施加完成之后，晶片W返回到原稿 然后将晶片W从涂膜形成装置卸载。 涂膜形成装置存储限定每种晶片W的涂布条件的多个配方。由配方限定的涂布条件包括晶片W的取向。基于所选择的配方，晶片W的取向自动设定。

公开(公告)号：USD546849S1

公开(公告)日：2007-07-17

申请号：US29241957

申请日：2005-11-03

申请人： Tomohiro Yotabun ,  Tsuyoshi Mizuno ,  Tsuyoshi Yoshida

设计人： Tomohiro Yotabun ,  Tsuyoshi Mizuno ,  Tsuyoshi Yoshida