摘要:
Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要:
A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.
摘要:
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要:
Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要:
Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.
摘要:
Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
摘要翻译:提供含水固体物质,其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得,提供了通过使用水 - 负载固体物质,以及使用上述浆料制造半导体器件的方法。 所述含水固体物质的体积密度为0.3〜3g / cm 3,制粒时的平均粒径为0.5〜100mmφ的范围。 用于抛光的所述浆料由含水固体物质制成,其在分散在水中的平均粒径在0.05-1.0μm的范围内。
摘要:
Disclosed herein is a receiving apparatus including: first to third position determination sections configured to determine the start position of an FFT interval which serves as a signal interval targeted for FFT by an FFT section; a selection section configured to select one of those start positions of the FFT interval which are determined by the first through the third position determination section; and the FFT section configured to perform FFT on the OFDM time domain signal by regarding the start position selected by the selection section as the start position of the FFT interval in order to generate the first OFDM frequency domain signal.
摘要:
An OFDM receiver may include OFDM-signal receiving means for receiving an orthogonal frequency division multiplexing (OFDM) signal; channel-characteristic estimating means for estimating a channel characteristic using pilot signals in the OFDM signal received by the OFDM-signal receiving means; and transmission-distortion compensating means for applying, on the basis of the channel characteristic estimated by the channel-characteristic estimating means, processing for compensating for transmission distortion to the OFDM signal received by the OFDM-signal receiving means. The channel-characteristic estimating means may include plural kinds of time-direction-channel estimating means used for the estimation of a channel characteristic, and switching control means for switching these estimating means according to a state of a channel.
摘要:
Disclosed herein is a synchronization circuit including: a first phase-locked loop circuit; a second phase-locked loop circuit; a first output circuit; a second output circuit; a first detection circuit; a second detection circuit; and a control circuit.
摘要:
Disclosed herein is a decoding apparatus that performs soft-decision decoding on a linear block code, the apparatus including a hard-decision decoder configured to perform hard-decision decoding on a received word using a hard-decision decoding algorithm; and a soft-decision decoder configured to perform, using a soft-decision algorithm, soft-decision decoding merely on a received word for which the hard-decision decoder has failed in the hard-decision decoding.