Methods and compositions for increasing replication capacity of an influenza virus
    12.
    发明授权
    Methods and compositions for increasing replication capacity of an influenza virus 失效
    增加流感病毒复制能力的方法和组合物

    公开(公告)号:US08097459B2

    公开(公告)日:2012-01-17

    申请号:US12552018

    申请日:2009-09-01

    Applicant: Hong Jin Bin Lu

    Inventor: Hong Jin Bin Lu

    Abstract: In certain aspects, the present invention provides methods for increasing the replication capacity of influenza viruses in hens' eggs and/or cell culture, recombinant and/or reassortant influenza viruses with increased replication capacity, and immunogenic and vaccine compositions comprising such recombinant and/or reassortant influenza viruses. In other aspects, the invention further provides nucleic acids encoding influenza genes associated with increased replication capacity, expression vectors comprising the nucleic acids of the invention, methods for making influenza viruses with increased replication capacity, and kits useful for practice of the methods.

    Abstract translation: 在某些方面,本发明提供了增加在具有增加的复制能力的母鸡卵和/或细胞培养物,重组和/或重配流感病毒中的流感病毒的复制能力的方法,以及包含这种重组和/或 重配流感病毒。 在其它方面,本发明还提供编码与增加的复制能力相关的流感基因的核酸,包含本发明的核酸的表达载体,具有增加的复制能力的制备流感病毒的方法,以及可用于实施该方法的试剂盒。

    Dual-gate normally-off nitride transistors
    18.
    发明授权
    Dual-gate normally-off nitride transistors 有权
    双栅极常关氮化物晶体管

    公开(公告)号:US08587031B2

    公开(公告)日:2013-11-19

    申请号:US13557414

    申请日:2012-07-25

    CPC classification number: H01L29/7787 H01L29/2003 H01L29/42316 H01L29/4236

    Abstract: A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the dual-gate normally-off nitride transistor. A second gate structure is formed between the first gate structure and the drain electrode for modulating a normally-on channel region underneath the second gate structure. The magnitude of the threshold voltage of the second gate structure is smaller than the drain breakdown of the first gate structure for proper operation of the dual-gate normally-off nitride transistor.

    Abstract translation: 一种双栅极常关氮化物晶体管,其包括形成在源电极和漏电极之间的第一栅极结构,用于控制双栅极正常氮化物晶体管的常关沟道区。 在第一栅极结构和漏极之间形成第二栅极结构,用于调制在第二栅极结构下方的常导通道区域。 第二栅极结构的阈值电压的幅度小于用于双栅极常关氮化物晶体管的正常工作的第一栅极结构的漏极击穿。

    User interface apparatus, image processing apparatus, and computer program product
    19.
    发明授权
    User interface apparatus, image processing apparatus, and computer program product 有权
    用户界面装置,图像处理装置和计算机程序产品

    公开(公告)号:US08411290B2

    公开(公告)日:2013-04-02

    申请号:US11520646

    申请日:2006-09-14

    Abstract: In a user interface apparatus, when a selected position of a to-be-processed image displayed on a display screen is detected through an area detecting unit, a menu display unit displays, in response to the detection of the selected position on the to-be-processed image, a link to at least one setting item being displayed in response to the selected position, the at least one setting item corresponding to a setting available for a setting area which corresponds to the selected position, where an order of display priority of the at least one setting item is determined by a size of the setting area. A determining unit determines that the setting item is specified, and an accepting unit accepts the setting corresponding to the setting item for the to-be-processed image. A preview display unit displays a preview indicating a result of processing the to-be-processed image based on the setting item.

    Abstract translation: 在用户接口装置中,当通过区域检测单元检测到在显示屏幕上显示的待处理图像的选定位置时,菜单显示单元响应于对所选择的位置的检测, 被处理图像,响应于所选择的位置而被显示的至少一个设置项目的链接,所述至少一个设置项目对应于可用于对应于所选位置的设置区域的设置,其中显示优先级 所述至少一个设定项目的大小由所述设定区域的大小决定。 确定单元确定指定了设置项目,并且接受单元接受对应于待处理图像的设置项目的设置。 预览显示单元基于设置项显示指示处理被处理图像的结果的预览。

    Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording
    20.
    发明授权
    Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording 有权
    用于热辅助磁记录的层压交换耦合粘合(LECA)介质

    公开(公告)号:US08241766B2

    公开(公告)日:2012-08-14

    申请号:US11835476

    申请日:2007-08-08

    Applicant: Bin Lu Ganping Ju

    Inventor: Bin Lu Ganping Ju

    CPC classification number: G11B5/314 G11B5/1278 G11B2005/001 G11B2005/0021

    Abstract: An apparatus includes a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature. The recording temperature is reduced due to the smaller switching volume achieved by using vertically decoupled laminations at elevated temperatures.

    Abstract translation: 一种装置包括彼此相邻定位的多个双层结构,每个双层结构包括具有第一居里温度的第一层磁性材料和邻近第一层定位的第二层磁性材料,其中第二层具有 第二居里温度低于第一居里温度时,当第二层磁性材料被加热到高于第二居里温度时,第一层的磁性颗粒是不稳定的。 由于在升高的温度下使用垂直去耦的叠片来实现较小的开关体积,所以记录温度降低。

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