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41 条记录 (耗时 0.022 秒)

    Oscillatory circuit having two oscillators
    11.
    发明申请
    Oscillatory circuit having two oscillators 审中-公开
    振荡电路有两个振荡器

    公开(公告)号：US20070057734A1

    公开(公告)日：2007-03-15

    申请号：US11223425

    申请日：2005-09-09

    申请人： Richard Ruby

    发明人： Richard Ruby

    IPC分类号： H03L7/00

    CPC分类号： H03L1/027 ,  H03L1/028

    摘要： An oscillatory circuit. The oscillatory circuit includes a first oscillator, a second oscillator, and a mixer circuit. The first oscillator is configured to generate a first oscillating signal at a first frequency and has a first frequency temperature coefficient. The second oscillator is configured to generate a second oscillating signal at a second frequency and has a second frequency temperature coefficient. The second frequency is greater than the first frequency, and the second frequency temperature coefficient is less than the first frequency temperature coefficient. The mixer circuit is configured to receive the first oscillating signal from the first oscillator, to receive the second oscillating signal from the second oscillator, and to generate a mixer signal from the first and the second oscillating signals. The mixer signal comprises a signal component at a beat frequency. The beat frequency is equal to the difference between the second frequency and the first frequency.

    摘要翻译： 振荡电路。 振荡电路包括第一振荡器，第二振荡器和混频器电路。 第一振荡器被配置为以第一频率产生第一振荡信号并且具有第一频率温度系数。 第二振荡器被配置为以第二频率产生第二振荡信号并且具有第二频率温度系数。 第二频率大于第一频率，第二频率温度系数小于第一频率温度系数。 混频器电路被配置为从第一振荡器接收第一振荡信号，以从第二振荡器接收第二振荡信号，并从第一和第二振荡信号产生混频器信号。 混频器信号包括拍频的信号分量。 节拍频率等于第二频率与第一频率之间的差。

    Semiconductor package and fabrication method
    13.
    发明申请
    Semiconductor package and fabrication method 审中-公开
    半导体封装及制造方法

    公开(公告)号：US20060099733A1

    公开(公告)日：2006-05-11

    申请号：US10985312

    申请日：2004-11-09

    申请人： Frank Geefay ,  Richard Ruby

    发明人： Frank Geefay ,  Richard Ruby

    IPC分类号： H01L21/44

    CPC分类号： H01L21/50 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L21/6835

    摘要： The present invention provides a first wafer and a second wafer having a device. A separation layer is formed on the first wafer. A cap is formed on the separation layer. The cap and the second wafer are bonded using a gasket. The first wafer is separated from the cap to form the semiconductor package comprised of the cap, the gasket, and the second wafer.

    摘要翻译： 本发明提供了具有装置的第一晶片和第二晶片。 在第一晶片上形成分离层。 在分离层上形成盖。 盖和第二晶片使用垫圈结合。 第一晶片与盖分离以形成由盖，垫圈和第二晶片组成的半导体封装。

    Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit
    15.
    发明申请
    Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit 有权
    用于选择性地阻挡射频（RF）切换电路中的射频（RF）信号的方法和装置

    公开(公告)号：US20070026836A1

    公开(公告)日：2007-02-01

    申请号：US11190611

    申请日：2005-07-27

    申请人： Yut Chow ,  Richard Ruby ,  Chong Chee

    发明人： Yut Chow ,  Richard Ruby ,  Chong Chee

    IPC分类号： H04B1/28

    CPC分类号： H03J5/244 ,  H03J2200/10 ,  H03K17/687 ,  H03K17/74

    摘要： An RF switching circuit that incorporates a film bulk acoustic resonator (FBAR) device and one or more capacitors that are used to vary the capacitance of the FBAR device to change the frequency range that is blocked by the FBAR device. When the RF switching circuit is in a first switching state, a first set of RF signals in a first frequency range is blocked by the RF switching circuit while RF signals of other frequencies are passed by the RF switching circuit. When the RF switching circuit is in a second switching state, a second set of RF signals in a second frequency range is blocked by the RF switching circuit while RF signals of other frequencies are passed by the RF switching circuit.

    摘要翻译： 一种RF切换电路，其包括膜体声波谐振器（FBAR）器件和一个或多个电容器，用于改变FBAR器件的电容以改变由FBAR器件阻塞的频率范围。 当RF开关电路处于第一开关状态时，RF开关电路阻止第一频率范围的第一组RF信号，而RF开关电路通过其他频率的RF信号。 当RF开关电路处于第二开关状态时，RF开关电路阻止第二频率范围的第二组RF信号，而RF开关电路通过其他频率的RF信号。

    Arrangement of lattice filter
    17.
    发明申请
    Arrangement of lattice filter 有权
    晶格滤波器的布置

    公开(公告)号：US20060087386A1

    公开(公告)日：2006-04-27

    申请号：US10974078

    申请日：2004-10-26

    申请人： Kun Wang ,  Michael Frank ,  Richard Ruby

    发明人： Kun Wang ,  Michael Frank ,  Richard Ruby

    IPC分类号： H03H9/70 ,  H03H9/54

    CPC分类号： H03H9/0095

    摘要： A filter and method of manufacturing a filter having a lattice arrangement that efficiently utilizes substrate space. An embodiment of the invention is directed to a filter having a plurality of resonators disposed on a substrate, each resonator comprising a first electrode and a second electrode disposed vertically adjacent such that an acoustic cavity of a piezoelectric material is formed between each first electrode and each second electrode of each resonator, the first and second electrodes of each resonator electrically isolated from each other via the piezoelectric material. In this manner, the filter is realized without having to use any vias. Additionally, the resonators may be of a shape that allows each to be disposed close together such that some sides of each of the resonators are parallel to each other. Thus, substrate space can be preserved even further.

    摘要翻译： 一种制造具有有效利用衬底空间的晶格布置的滤光器的滤光器和方法。 本发明的实施例涉及一种具有设置在基板上的多个谐振器的滤波器，每个谐振器包括第一电极和垂直相邻设置的第二电极，使得在每个第一电极和每个第一电极之间形成压电材料的声腔 每个谐振器的第二电极，每个谐振器的第一和第二电极经由压电材料彼此电隔离。 以这种方式，实现过滤器而不必使用任何通孔。 此外，谐振器可以是允许每个谐振器彼此靠近放置的形状，使得每个谐振器的一些侧面彼此平行。 因此，可以进一步保持基板空间。

    Vertically separated acoustic filters and resonators
    19.
    发明申请
    Vertically separated acoustic filters and resonators 失效
    垂直分离的声学滤波器和谐振器

    公开(公告)号：US20050184830A1

    公开(公告)日：2005-08-25

    申请号：US10785525

    申请日：2004-02-23

    申请人： Richard Ruby ,  John Larson

    发明人： Richard Ruby ,  John Larson

    IPC分类号： H01L41/09 ,  H01L41/08 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60

    CPC分类号： H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    摘要翻译： 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Film acoustically-coupled transformer
    20.
    发明申请
    Film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号：US20050093655A1

    公开(公告)日：2005-05-05

    申请号：US10965637

    申请日：2004-10-13

    申请人： John Larson ,  Richard Ruby ,  Stephen Ellis

    发明人： John Larson ,  Richard Ruby ,  Stephen Ellis

    IPC分类号： H03H9/02 ,  H03H9/13 ,  H03H9/58 ,  H03H9/60

    CPC分类号： H03H9/605 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

    摘要： One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    摘要翻译： 薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。 一些实施例另外电平衡。