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    Methods of Fabricating a Microarray
    11.
    发明申请
    Methods of Fabricating a Microarray 审中-公开
    制作微阵列的方法

    公开(公告)号：US20110244397A1

    公开(公告)日：2011-10-06

    申请号：US13079958

    申请日：2011-04-05

    申请人： Myung-Sun Kim ,  Hyo-Jin Yun ,  Se-Kyung Baek ,  Soo-Kyung Kim ,  Ji-Yun Ham ,  Young-Ho Kim

    发明人： Myung-Sun Kim ,  Hyo-Jin Yun ,  Se-Kyung Baek ,  Soo-Kyung Kim ,  Ji-Yun Ham ,  Young-Ho Kim

    IPC分类号： G03F7/20

    CPC分类号： G03F7/165 ,  G01N33/487 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/405

    摘要： A method of fabricating a microarray is provided, which includes providing a substrate having a surface that is protected by an acid labile protective group that includes an acetal group represented by formula (1) and has a functional group that can be coupled with a monomer of a probe; applying a photoresist including a photo acid generator to the substrate; selectively exposing the photoresist to deprotect the acid labile protective group that corresponds to an exposed region; removing the photoresist; and coupling the monomer that is combined with the acid labile protective group with the deprotected functional group. Formula (1) has the following structure: wherein, R1 denotes an alkyl group having 1 to 5 carbon atoms, R2 denotes hydrogen or a methyl group, and Y denotes a monomer or a site coupled with the substrate.

    摘要翻译： 提供了一种制造微阵列的方法，其包括提供具有被酸不稳定保护基保护的表面的基底，所述酸不稳定保护基包括由式（1）表示的缩醛基，并具有可以与式 探针 将包含光酸产生剂的光致抗蚀剂施加到基底上; 选择性地暴露光致抗蚀剂以使对应于暴露区域的酸不稳定保护基脱保护; 去除光致抗蚀剂; 并将与酸不稳定保护基结合的单体与去保护的官能团偶合。 式（1）具有以下结构：其中，R 1表示碳原子数为1〜5的烷基，R 2表示氢或甲基，Y表示与基材偶合的单体或部位。

    Methods of forming a pattern using photoresist compositions
    12.
    发明申请
    Methods of forming a pattern using photoresist compositions 有权
    使用光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US20100266966A1

    公开(公告)日：2010-10-21

    申请号：US12662455

    申请日：2010-04-19

    申请人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    发明人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

    摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

    摘要翻译： 一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物 ，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链 ，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。

    Photoresist compositions and methods of forming a pattern using the same
    13.
    发明申请
    Photoresist compositions and methods of forming a pattern using the same 审中-公开
    光刻胶组合物和使用其形成图案的方法

    公开(公告)号：US20080102403A1

    公开(公告)日：2008-05-01

    申请号：US11977893

    申请日：2007-10-26

    申请人： Seong-June Kim ,  Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Seok Han ,  Hyo-Jin Yun

    发明人： Seong-June Kim ,  Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Seok Han ,  Hyo-Jin Yun

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  G03F7/40

    摘要： A photoresist-composition includes about 4 to about 20 percent by weight of an acrylate copolymer; about 0.1 to about 0.5 percent by weight of a photoacid generator; and a solvent. The acrylate copolymer includes about 28 to about 38 percent by mole of a first repeating unit represented by Formula (1), about 28 to about 38 percent by mole of a second repeating unit represented by Formula (2), about 0.5 to about 22 percent by mole of a third repeating unit represented by Formula (3) and about 4 to about 42 percent by mole of a fourth repeating unit represented by Formula (4), wherein R1, R2, R3 and R4 independently represent a hydrogen atom or a C1-C3 alkyl group, X is a blocking group including an alkyl-substituted adamantane or an alkyl-substituted tricycloalkane, Y is a blocking group including a lactone, Z1 is a blocking group including a hydroxyl-substituted adamantane, and Z2 is a blocking group including an alkoxy-substituted adamantane.

    摘要翻译： 光致抗蚀剂组合物包含约4至约20重量％的丙烯酸酯共聚物; 约0.1至约0.5重量％的光酸产生剂; 和溶剂。 丙烯酸酯共聚物包含约28至约38摩尔％的由式（1）表示的第一重复单元，约28至约38摩尔％的由式（2）表示的第二重复单元，约0.5至约22重量％ 的由式（3）表示的第三重复单元和约4至约42摩尔％的由式（4）表示的第四重复单元，其中R 1，R 2 R 3和R 4独立地表示氢原子或C 1 -C 3 - 烷基，X是包括烷基取代的金刚烷或烷基取代的三环烷烃的封闭基团，Y是包含内酯的封闭基团，Z 1是包含羟基取代的金刚烷的封闭基团， Z 2是含有烷氧基取代的金刚烷的封端基。

    Methods of forming a pattern of a semiconductor device
    15.
    发明授权
    Methods of forming a pattern of a semiconductor device 失效
    形成半导体器件的图案的方法

    公开(公告)号：US07964332B2

    公开(公告)日：2011-06-21

    申请号：US12339863

    申请日：2008-12-19

    申请人： Hyo-Jin Yun ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Ji-Man Park ,  Jin-A Ryu ,  Jae-Hee Choi

    发明人： Hyo-Jin Yun ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Ji-Man Park ,  Jin-A Ryu ,  Jae-Hee Choi

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/26

    CPC分类号： G03F7/091 ,  G03F7/038 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/128

    摘要： In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

    摘要翻译： 在用于抗反射涂层的聚合物中，用于抗反射涂层的组合物和使用其形成半导体器件的图案的方法，用于抗反射涂层的组合物包括聚合物，其包括具有碱性 具有光吸收基团的第二重复单元和具有可交联基团的第三重复单元; 光致酸发生器; 交联剂; 和溶剂。 用于抗反射涂层的聚合物可以具有与聚合物的骨架化学结合的碱性侧基，可以适当地调节抗反射涂层中的酸的扩散以改善图案的轮廓。