公开(公告)号：US10720336B2

公开(公告)日：2020-07-21

申请号：US16117480

申请日：2018-08-30

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Emily Gallagher ,  Roel Gronheid ,  Jan Doise ,  Iacopo Mochi

IPC: H01L21/308 ,  H01L21/027 ,  G03F7/11 ,  G03F7/00 ,  G03F1/36 ,  G03F1/68 ,  C09D153/00

Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

公开(公告)号：US20190155159A1

公开(公告)日：2019-05-23

申请号：US16094119

申请日：2017-04-07

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW

Inventor： Werner Knaepen ,  Jan Willem Maes ,  Maarten Stokhof ,  Roel Gronheid ,  Hari Pathangi Sriraman

IPC: G03F7/16

Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.

公开(公告)号：US20190074186A1

公开(公告)日：2019-03-07

申请号：US16117480

申请日：2018-08-30

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Emily Gallagher ,  Roel Gronheid ,  Jan Doise ,  Iacopo Mochi

IPC: H01L21/308 ,  H01L21/027 ,  G03F7/11

CPC classification number: H01L21/3086 ,  C09D153/005 ,  G03F1/36 ,  G03F1/68 ,  G03F7/0002 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/3088

Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

公开(公告)号：US10186459B2

公开(公告)日：2019-01-22

申请号：US15704837

申请日：2017-09-14

Applicant: IMEC VZW

Inventor： Roel Gronheid ,  Vladimir Machkaoutsan

IPC: H01L21/82 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/306 ,  H01L21/762 ,  H01L21/02 ,  G03F7/00 ,  H01L29/66

Abstract: The present disclosure relates to methods and structures that involve the use of directed self-assembly to selectively remove at least one fin or fin section from a pattern of parallel fins in a semiconductor structure.

公开(公告)号：US09391141B2

公开(公告)日：2016-07-12

申请号：US14628608

申请日：2015-02-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L21/308 ,  H01L29/10 ,  H01L29/06 ,  H01L21/762 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L29/1037 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.

Abstract translation: 在半导体衬底的区域中使用定向自组装（DSA）光刻图案来制造鳍结构的方法包括提供在其一侧上覆盖有浅沟槽隔离（STI）层堆叠的半导体衬底; 通过进行DSA以外的平版印刷图案化步骤，在所述基板的所述一侧上限定翅片区域，其中所述翅片结构将在所述翅片区域中产生; 以及使用DSA平版印刷图案，根据预定的散热片图案在散热片区域内的半导体衬底中制造翅片结构。 本公开还涉及相关联的半导体结构。

公开(公告)号：US20150243509A1

公开(公告)日：2015-08-27

申请号：US14628608

申请日：2015-02-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Safak Sayan ,  Min-Soo Kim ,  Doni Parnell ,  Roel Gronheid

IPC: H01L21/308 ,  H01L21/762 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/1037 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.

Abstract translation: 在半导体衬底的区域中使用定向自组装（DSA）光刻图案来制造鳍结构的方法包括提供在其一侧上覆盖有浅沟槽隔离（STI）层堆叠的半导体衬底; 通过进行DSA以外的平版印刷图案化步骤，在所述基板的所述一侧上限定翅片区域，其中所述翅片结构将在所述翅片区域中产生; 以及使用DSA平版印刷图案，根据预定的散热片图案在散热片区域内的半导体衬底中制造翅片结构。 本公开还涉及相关联的半导体结构。