公开(公告)号：US11424201B2

公开(公告)日：2022-08-23

申请号：US16012341

申请日：2018-06-19

Applicant: Infineon Technologies AG

Inventor： Michael Rogalli ,  Johann Gatterbauer ,  Wolfgang Lehnert ,  Kurt Matoy ,  Evelyn Napetschnig ,  Manfred Schneegans ,  Bernhard Weidgans

IPC: H01L23/00

Abstract: A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.

公开(公告)号：US10957686B2

公开(公告)日：2021-03-23

申请号：US16744693

申请日：2020-01-16

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Peter Brandl ,  Kurt Matoy ,  Thomas Ostermann

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L29/40 ,  H01L49/02 ,  H01L29/739 ,  H01L29/808

Abstract: A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area, and a pn junction diode electrically connected in series with the resistor. A method of producing the semiconductor device is also described.

公开(公告)号：US10515910B2

公开(公告)日：2019-12-24

申请号：US14535456

申请日：2014-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Martin Mischitz ,  Kurt Matoy

IPC: H01L23/482 ,  H01L23/00

Abstract: According to various embodiments, a semiconductor device may include: a contact pad; a metal clip disposed over the contact pad; and a porous metal layer disposed between the metal clip and the contact pad, the porous metal layer connecting the metal clip and the contact pad with each other.

公开(公告)号：US10186508B2

公开(公告)日：2019-01-22

申请号：US15792492

申请日：2017-10-24

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Peter Brandl ,  Kurt Matoy ,  Thomas Ostermann

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L49/02 ,  H01L29/739 ,  H01L29/808 ,  H01L29/40

Abstract: A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area.

公开(公告)号：US20180366427A1

公开(公告)日：2018-12-20

申请号：US16012341

申请日：2018-06-19

Applicant: Infineon Technologies AG

Inventor： Michael Rogalli ,  Johann Gatterbauer ,  Wolfgang Lehnert ,  Kurt Matoy ,  Evelyn Napetschnig ,  Manfred Schneegans ,  Bernhard Weidgans

IPC: H01L23/00

Abstract: A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.

公开(公告)号：US20180076321A1

公开(公告)日：2018-03-15

申请号：US15261566

申请日：2016-09-09

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Kurt Matoy

IPC: H01L29/78 ,  H01L21/306 ,  H01L29/66 ,  H01L29/423 ,  H01L21/768 ,  H01L21/308 ,  H01L29/417

CPC classification number: H01L29/7827 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/743 ,  H01L21/76841 ,  H01L29/34 ,  H01L29/401 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8611

Abstract: A method of fabricating a semiconductor device includes etching a first surface of a semiconductor substrate from a first side using a first etching process to expose a second surface. The second surface includes a first plurality of features. The first plurality of features has an average height that is a first height. The second surface of the semiconductor substrate is etched from the first side using a second etching process to expose a third surface of the semiconductor substrate. The second etching process converts the first plurality of features into a second plurality of features. The second plurality of features has an average height that is a second height. The second height is less than the first height. A conductive layer is formed over the third surface of the semiconductor substrate using a physical deposition process.

公开(公告)号：US09728480B2

公开(公告)日：2017-08-08

申请号：US14699704

申请日：2015-04-29

Applicant: Infineon Technologies AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L21/3105 ,  H01L23/31 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

公开(公告)号：US20160133584A1

公开(公告)日：2016-05-12

申请号：US14535456

申请日：2014-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Martin Mischitz ,  Kurt Matoy

IPC: H01L23/00

Abstract: According to various embodiments, a semiconductor device may include: a contact pad; a metal clip disposed over the contact pad; and a porous metal layer disposed between the metal clip and the contact pad, the porous metal layer connecting the metal clip and the contact pad with each other.

Abstract translation: 根据各种实施例，半导体器件可以包括：接触垫; 设置在所述接触垫上方的金属夹; 以及设置在所述金属夹和所述接触垫之间的多孔金属层，所述多孔金属层将所述金属夹和所述接触垫彼此连接。