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公开(公告)号：US11275059B2
公开(公告)日：2022-03-15
申请号：US16699993
申请日：2019-12-02
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Juergen Woellenstein
Abstract: An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a calibration unit that includes at least one processor configured to calculate calibration information. A light emitter of the photoacoustic sensor is configured to emit an electromagnetic spectrum and the photoacoustic sensor is configured to provide at least two measurement signals based on at least two electromagnetic spectra. The calibration unit is configured to compare the at least two measurement signals to obtain the calibration information and apply the calibration information to the photoacoustic sensor to perform the in-situ calibration.
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公开(公告)号：US20200080972A1
公开(公告)日：2020-03-12
申请号：US16686670
申请日：2019-11-18
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss
Abstract: Photoacoustic gas sensor having a light pulse emitter, a microphone in a reference gas housing having a reference gas, and a sample gas housing to be filled with a gas to be analyzed. A wall separates the sample gas housing from the reference gas housing, and has a transparent region that is transparent to light within a frequency range of emitted light pulses. Remaining inner walls of the sample gas housing have a reflecting surface that reflect light pulses emitted by the emitter so that a portion of the light pulses not absorbed by the gas to be analyzed pass through the transparent region into the reference gas volume. The microphone generates a sensor signal indicating information on an acoustic wave caused by the light pulses interacting with the reference gas after crossing the gas to be analyzed.
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公开(公告)号：US20190323947A1
公开(公告)日：2019-10-24
申请号：US16456361
申请日：2019-06-28
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
Abstract: Shown is a wafer arrangement for a gas sensor including a first substrate and a sescond substrate. The first substrate includes a MEMS membrane associated with a sensor element and an emitter element configured to emit electromagnetic radiation. The second substrate is arranged on top of the first substrate and defines at least a portion of a chamber disposed adjacent to the MEMS membrane.
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公开(公告)号：US20190148101A1
公开(公告)日：2019-05-16
申请号：US16186678
申请日：2018-11-12
Applicant: Infineon Technologies AG
Inventor： Matthias EBERL , Franz Jost , Stefan Kolb
Abstract: A microelectromechanical light emitter component comprises an emitter layer structure of the microelectromechanical light emitter component and an inductive structure of the microelectromechanical light emitter component. The inductive structure of the microelectromechanical light emitter component is configured to generate current in the emitter layer structure by electromagnetic induction, such that the emitter layer structure emits light. The emitter layer structure is electrically insulated from the inductive structure.
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公开(公告)号：US10241088B2
公开(公告)日：2019-03-26
申请号：US15136469
申请日：2016-04-22
Applicant: Infineon Technologies AG
Inventor： Horst Theuss , Gottfried Beer , Sebastian Beer , Alfons Dehe , Franz Jost , Stefan Kolb , Guenther Ruhl , Rainer Markus Schaller
IPC: G01N29/24 , G01N29/032
Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.
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Patent Agency Ranking
公开(公告)号：US09978930B2
公开(公告)日：2018-05-22
申请号：US15652579
申请日：2017-07-18
Applicant: Infineon Technologies AG
Inventor： Markus Eckinger , Stefan Kolb
CPC classification number: H01L43/04 , G01R33/0052 , G01R33/07 , H01L43/065 , H01L43/14
Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.
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公开(公告)号：US09812496B2
公开(公告)日：2017-11-07
申请号：US15391111
申请日：2016-12-27
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
IPC: H01L43/12 , H01L27/22 , H01L23/528 , H01L23/522 , H01L43/02 , H01L23/552 , H01L43/08 , G01R33/09
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
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公开(公告)号：US20170062704A1
公开(公告)日：2017-03-02
申请号：US15349004
申请日：2016-11-11
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
Abstract translation: 霍尔效应器件包括半导体衬底中的有源霍尔区域和至少四个端子结构，每个端子结构包括可切换电源接触元件和感测接触元件，其中每个电源接触元件包括具有第一晶体管端子的晶体管元件 ，第二晶体管端子和控制端子，其中第二晶体管端子接触有源霍尔区域或在有源霍尔区域中延伸; 并且其中所述感测接触元件布置在所述有源霍尔区域中并且与所述可切换电源接触元件相邻。
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公开(公告)号：US20160282259A1
公开(公告)日：2016-09-29
申请号：US15079840
申请日：2016-03-24
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
IPC: G01N21/17
CPC classification number: G01N21/1702 , G01N29/022 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/0256
Abstract: Shown is a gas sensor including a sensor element, a measurement chamber and an emitter element. The sensor element has a MEMS membrane which is arranged in a first substrate region. Furthermore, the measurement chamber is embodied to receive a measurement gas.
Abstract translation: 示出了包括传感器元件，测量室和发射器元件的气体传感器。 传感器元件具有布置在第一衬底区域中的MEMS膜。 此外，测量室被实施为接收测量气体。
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公开(公告)号：US09423472B2
公开(公告)日：2016-08-23
申请号：US14972648
申请日：2015-12-17
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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