公开(公告)号：US11716826B2

公开(公告)日：2023-08-01

申请号：US16402055

申请日：2019-05-02

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Johanna M. Swan ,  Georgios Dogiamis ,  Henning Braunisch ,  Adel A. Elsherbini ,  Aleksandar Aleksov ,  Richard Dischler

IPC: H05K7/14 ,  H05K1/02 ,  H01P5/12 ,  H01P3/16 ,  H01L23/00 ,  H01L25/18 ,  H01L23/66 ,  H01L23/538 ,  H05K1/18

CPC classification number: H05K7/1489 ,  H01P3/16 ,  H01P5/12 ,  H05K1/0243 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L25/18 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2224/16225 ,  H05K1/181 ,  H05K2201/10356 ,  H05K2201/10378 ,  H05K2201/10734

Abstract: Embodiments may relate an electronic device that includes a first platform and a second platform coupled with a chassis. The platforms may include respective microelectronic packages. The electronic device may further include a waveguide coupled to the first platform and the second platform such that their respective microelectronic packages are communicatively coupled by the waveguide. Other embodiments may be described or claimed.

公开(公告)号：US20230144206A1

公开(公告)日：2023-05-11

申请号：US17523655

申请日：2021-11-10

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Adel A. Elsherbini

IPC: H01L23/66 ,  H01L25/065 ,  H01L23/538 ,  H01Q1/22 ,  H01Q9/04 ,  H01L25/00

CPC classification number: H01L23/66 ,  H01L25/0652 ,  H01L23/5384 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01L25/50

Abstract: A microelectronic assembly is provided comprising: a first IC die in a first layer comprising an array of radio frequency (RF) patch antennas on a side opposite to a second layer; a second IC die in the second layer between the first layer and a third layer; and a third IC die in the third layer. The first IC die comprises RF and analog circuitry, the first IC die is part of an array of IC dies having similar size and circuitry as the first IC die, the second layer and the third layer comprise a dielectric with through-dielectric vias (TDVs) therein surrounding the second IC die and the third IC die, respectively, and an interface between adjacent layers comprises interconnects having a pitch of 10 micrometers between adjacent interconnects.

公开(公告)号：US11594801B2

公开(公告)日：2023-02-28

申请号：US16613070

申请日：2017-07-01

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Sasha Oster ,  Telesphor Kamgaing ,  Erich Ewy ,  Kenneth Shoemaker ,  Adel Elsherbini ,  Johanna Swan

IPC: B60R11/04 ,  H01P3/16 ,  B60R16/023 ,  B60W40/02

Abstract: Embodiments of the invention include autonomous vehicles and mm-wave systems for communication between components. In an embodiment the vehicle includes an electronic control unit (ECU). The ECU may include a printed circuit board (PCB) and a CPU die packaged on a CPU packaging substrate. In an embodiment, the CPU packaging substrate is electrically coupled to the PCB. The ECU may also include an external predefined interface electrically coupled to the CPU die. In an embodiment, an active mm-wave interconnect may include a dielectric waveguide, and a first connector coupled to a first end of the dielectric waveguide. In an embodiment, the first connector comprises a first mm-wave engine, and the first connector is electrically coupled to the external predefined interface. Embodiments may also include a second connector coupled to a second end of the dielectric waveguide, wherein the second connector comprises a second mm-wave engine.

公开(公告)号：US20220415555A1

公开(公告)日：2022-12-29

申请号：US17359165

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Qiang Yu ,  Adel Elsherbini ,  Kimin Jun

IPC: H01F27/06 ,  H01L23/64 ,  H01L23/522 ,  H01L23/528 ,  H01L49/02 ,  H01F27/28 ,  H01L21/50

Abstract: Methods and apparatus for inductor and transformer semiconductor devices using hybrid bonding technology are disclosed. An example semiconductor device includes a first standoff substrate; a second standoff substrate adjacent the first standoff substrate; and a conductive layer adjacent at least one of the first standoff substrate or the second standoff substrate.

公开(公告)号：US11538758B2

公开(公告)日：2022-12-27

申请号：US15963066

申请日：2018-04-25

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Johanna M. Swan

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/66 ,  H01P3/12 ,  H01P5/12

Abstract: Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.

公开(公告)号：US11462810B2

公开(公告)日：2022-10-04

申请号：US17194022

申请日：2021-03-05

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Sasha Oster ,  Georgios Dogiamis ,  Johanna Swan

IPC: H01P5/08 ,  H01P1/207 ,  H01P3/12

Abstract: Embodiments of the invention include a mm-wave waveguide connector and methods of forming such devices. In an embodiment the mm-wave waveguide connector may include a plurality of mm-wave launcher portions, and a plurality of ridge based mm-wave filter portions each communicatively coupled to one of the mm-wave launcher portions. In an embodiment, the ridge based mm-wave filter portions each include a plurality of protrusions that define one or more resonant cavities. Additional embodiments may include a multiplexer portion communicatively coupled to the plurality of ridge based mm-wave filter portions and communicative coupled to a mm-wave waveguide bundle. In an embodiment the plurality of protrusions define resonant cavities with openings between 0.5 mm and 2.0 mm, the plurality of protrusions are spaced apart from each other by a spacing between 0.5 mm and 2.0 mm, and wherein the plurality of protrusions have a thickness between 200 μm and 1,000 μm.

公开(公告)号：US11329359B2

公开(公告)日：2022-05-10

申请号：US16014036

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Adel A. Elsherbini ,  Telesphor Kamgaing ,  Henning Braunisch ,  Johanna M. Swan

IPC: H01P3/16 ,  H01L23/66 ,  H01P11/00 ,  H04B10/2581

Abstract: Disclosed herein are various designs for dielectric waveguides, as well as methods of manufacturing such waveguides. One type of dielectric waveguides described herein includes waveguides with one or more cavities in the dielectric waveguide material. Another type of dielectric waveguides described herein includes waveguides with a conductive ridge in the dielectric waveguide material. Dielectric waveguides described herein may be dispersion reduced dielectric waveguides, compared to conventional dielectric waveguides, and may be designed to adjust the difference in the group delay between the lower frequencies and the higher frequencies of a chosen bandwidth.

公开(公告)号：US11310907B2

公开(公告)日：2022-04-19

申请号：US16697699

申请日：2019-11-27

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Aleksandar Aleksov ,  Feras Eid ,  Telesphor Kamgaing ,  Johanna M. Swan

IPC: H05K1/02 ,  H05K1/16 ,  H05K3/12 ,  H05K3/40 ,  H05K9/00

Abstract: Embodiments may relate to a microelectronic package or a die thereof which includes a die, logic, or subsystem coupled with a face of the substrate. An inductor may be positioned in the substrate. Electromagnetic interference (EMI) shield elements may be positioned within the substrate and surrounding the inductor. Other embodiments may be described or claimed.

公开(公告)号：US10964992B2

公开(公告)日：2021-03-30

申请号：US16186103

申请日：2018-11-09

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Adel A. Elsherbini ,  Henning Braunisch ,  Gilbert W. Dewey ,  Telesphor Kamgaing ,  Hyung-Jin Lee ,  Johanna M. Swan

IPC: H01P1/213 ,  H01P3/127 ,  H01P5/103 ,  H01P3/10 ,  H01P3/16 ,  H01P5/107 ,  H01P3/12 ,  H01P5/08

Abstract: There is disclosed in one example an electromagnetic wave launcher apparatus, including: an interface to an electromagnetic waveguide; a first launcher configured to launch a high-frequency electromagnetic signal onto a first cross-sectional portion of the waveguide; and a second launcher configured to launch a lower-frequency electromagnetic signal onto a second cross-sectional portion of the waveguide.

公开(公告)号：US20210043541A1

公开(公告)日：2021-02-11

申请号：US16532956

申请日：2019-08-06

Applicant: Intel Corporation

Inventor： Feras Eid ,  Telesphor Kamgaing ,  Georgios Dogiamis ,  Aleksandar Aleksov ,  Johanna M. Swan

IPC: H01L23/38 ,  H01L23/498 ,  H01L27/20 ,  H01L25/18 ,  H01L23/00 ,  H01L41/053 ,  H03H9/205 ,  H01L23/14 ,  H01L23/538 ,  H01L23/66 ,  H01L23/31 ,  H01L35/32 ,  H01L23/427 ,  H03H9/05 ,  H03H9/02

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.