中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

17 records (took 0.013 seconds)

    Sputter Gun
    15.
    发明申请
    Sputter Gun 审中-公开
    溅射枪

    公开(公告)号：US20140174918A1

    公开(公告)日：2014-06-26

    申请号：US13721419

    申请日：2012-12-20

    Applicant: INTERMOLECULAR, INC.

    Inventor： Hong Sheng Yang ,  Kent Riley Child ,  Chi-I Lang ,  Jingang Su ,  Danny Wang

    IPC: C23C14/35

    CPC classification number: C23C14/352 ,  C23C14/50 ,  C23C14/548 ,  H01J37/3405 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3497

    Abstract: A sputter gun is provided. The sputter gun includes a target and a first plate coupled to a surface of the target. A first magnet is disposed over a second magnet. A second plate coupled to a surface of the first magnet and a gap is defined between a surface of the second magnet and a surface of the first plate. A fluid inlet and a fluid outlet are disposed above a surface of the first magnet. A restriction bar is coupled to the second plate, wherein the restriction bar is configured to prevent a flow path of fluid through the first inlet to the second inlet unless the fluid traverses the gap defined between a surface of the second magnet and a surface of the first plate. Alternative configurations of the sputter gun are included.

    Abstract translation: 提供溅射枪。 溅射枪包括目标和耦合到靶的表面的第一板。 第一磁体设置在第二磁体上。 耦合到第一磁体的表面的第二板和间隙限定在第二磁体的表面和第一板的表面之间。 流体入口和流体出口设置在第一磁体的表面上方。 限制杆联接到第二板，其中限制杆被配置为防止流体通过第二入口的第一入口的流动路径，除非流体穿过限定在第二磁体的表面与第二磁体的表面之间的间隙 第一盘。 包括溅射枪的替代配置。

    Transition metal oxide bilayers
    16.
    发明授权
    Transition metal oxide bilayers 有权
    过渡金属氧化物双层

    公开(公告)号：US08704203B2

    公开(公告)日：2014-04-22

    申请号：US13971467

    申请日：2013-08-20

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

    IPC: H01L29/02

    CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

    Abstract translation: 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

Patent Agency Ranking