High Deposition Rate Chamber with Co-Sputtering Capabilities
    1.
    发明申请
    High Deposition Rate Chamber with Co-Sputtering Capabilities 审中-公开
    具有共溅射能力的高沉积速率室

    公开(公告)号:US20140174907A1

    公开(公告)日:2014-06-26

    申请号:US13725133

    申请日:2012-12-21

    IPC分类号: C23C14/34

    摘要: A deposition chamber is provided. The deposition chamber includes a plurality of sputter guns disposed within the chamber, wherein the plurality of sputter guns are operable to vertically extend and retract within the chamber and wherein each gun of the plurality of sputter guns is pivotable around a pivot axis. The chamber includes a substrate support rotatable around a first axis and a second axis and a plate disposed over the substrate support. The plate has a plurality of apertures extending therethrough. The plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns and a centrally located aperture.

    摘要翻译: 提供沉积室。 沉积室包括设置在室内的多个溅射枪,其中多个溅射枪可操作以在室内垂直延伸和缩回,并且其中多个溅射枪中的每个喷枪可围绕枢转轴线枢转。 腔室包括可围绕第一轴线旋转的基底支撑件和第二轴线以及设置在基板支撑件上方的板材。 该板具有延伸穿过其中的多个孔。 多个孔包括位于多个溅射枪的每个溅射枪下方的孔和位于中心的孔。

    Cooling Efficiency Method for Fluid Cooled Sputter Guns
    2.
    发明申请
    Cooling Efficiency Method for Fluid Cooled Sputter Guns 审中-公开
    流体冷却溅射枪的冷却效率方法

    公开(公告)号:US20140144771A1

    公开(公告)日:2014-05-29

    申请号:US13687984

    申请日:2012-11-28

    IPC分类号: C23C14/35

    摘要: A sputter gun assembly is provided. The sputter gun assembly includes a target and a target backing plate coupled to the back of the target. A magnetron is positioned within a cooling chamber and is disposed over the target backing plate and defines a gap between the magnetron and the target backing plate. A fluid inlet and a fluid outlet are connected to the cooling chamber. A restriction bar is positioned within the cooling chamber, wherein the restriction bar is configured to prevent a flow of fluid through the inlet to the outlet unless the fluid traverses the gap defined between the magnetron and the target backing plate. The sputter gun assembly further includes a diverter surrounding the magnetron. The diverter further includes slots in its surface that serve to direct cooling fluid through the gap formed between defined between the magnetron and the target backing plate.

    摘要翻译: 提供溅射枪组件。 溅射枪组件包括连接到靶的背面的靶和目标背板。 磁控管定位在冷却室内并且设置在目标背板上并限定磁控管与目标背板之间的间隙。 流体入口和流体出口连接到冷却室。 限制杆定位在冷却室内,其中限制杆构造成防止流体流过出口的入口,除非流体横过磁控管和目标背板之间限定的间隙。 溅射枪组件还包括围绕磁控管的转向器。 分流器还包括其表面中的槽,其用于将冷却流体引导通过形成在磁控管和目标背板之间的间隙。

    In Situ Sputtering Target Measurement
    3.
    发明申请
    In Situ Sputtering Target Measurement 审中-公开
    原位溅射目标测量

    公开(公告)号:US20140183036A1

    公开(公告)日:2014-07-03

    申请号:US13728096

    申请日:2012-12-27

    IPC分类号: G01B11/24

    摘要: Methods and systems for in situ measuring sputtering target erosion are disclosed. The emission of material from the sputtering target is stopped, a distance sensor is scanned across a radial line on the sputtering target. The sputtering chamber contains a controlled environment separate and distinct from the environment outside the chamber, and the controlled environment is maintained during the scanning The resulting distance data is converted into a surface profile of the sputtering target. The accuracy of the surface profile can be less than about ±1 μm. The distance sensor is protected from deposition of the material from the sputtering target. End-of-life for a sputtering target can be determined by obtaining a surface profile of the sputtering target at regular intervals and replacing the sputtering target when the thinnest location on the target as measured by the surface profile is below a predetermined threshold.

    摘要翻译: 公开了用于原位测量溅射靶侵蚀的方法和系统。 停止从溅射靶发射材料,通过溅射靶上的径向线扫描距离传感器。 溅射室包含与室外环境分离和不同的受控环境,并且在扫描期间保持受控环境。所得到的距离数据被转换成溅射靶的表面轮廓。 表面轮廓的精度可以小于约±1μm。 保护距离传感器免受溅射靶材料的沉积。 溅射靶的寿命终止可以通过以规则的间隔获得溅射靶的表面轮廓并且当由表面轮廓测量的靶上的最薄位置低于预定阈值时,代替溅射靶来确定。

    New Magnet Design Which Improves Erosion Profile for PVD Systems
    4.
    发明申请
    New Magnet Design Which Improves Erosion Profile for PVD Systems 审中-公开
    提高PVD系统侵蚀性能的新型磁铁设计

    公开(公告)号:US20140124359A1

    公开(公告)日:2014-05-08

    申请号:US13667856

    申请日:2012-11-02

    IPC分类号: C23C14/35

    摘要: Methods and apparatuses for performing combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. The processing chamber includes a sputter assembly disposed over the substrate. The sputter assembly includes a rotatable n-fold, symmetric-shaped magnetron and a sputter target. The methods include depositing a first film on the surface of a first site-isolated region of the substrate. The methods further include depositing a second film on the surface of a second site-isolated region of the substrate. Furthermore, methods include evaluating results of the first and second films.

    摘要翻译: 公开了用于执行组合处理的方法和装置。 方法包括将衬底引入处理室。 处理室包括设置在基板上方的溅射组件。 溅射组件包括可旋转的n倍对称形磁控管和溅射靶。 所述方法包括在衬底的第一位置隔离区域的表面上沉积第一膜。 该方法还包括在衬底的第二位置隔离区域的表面上沉积第二膜。 此外,方法包括评估第一和第二膜的结果。

    Sputter Gun
    7.
    发明申请
    Sputter Gun 审中-公开
    溅射枪

    公开(公告)号:US20140174918A1

    公开(公告)日:2014-06-26

    申请号:US13721419

    申请日:2012-12-20

    IPC分类号: C23C14/35

    摘要: A sputter gun is provided. The sputter gun includes a target and a first plate coupled to a surface of the target. A first magnet is disposed over a second magnet. A second plate coupled to a surface of the first magnet and a gap is defined between a surface of the second magnet and a surface of the first plate. A fluid inlet and a fluid outlet are disposed above a surface of the first magnet. A restriction bar is coupled to the second plate, wherein the restriction bar is configured to prevent a flow path of fluid through the first inlet to the second inlet unless the fluid traverses the gap defined between a surface of the second magnet and a surface of the first plate. Alternative configurations of the sputter gun are included.

    摘要翻译: 提供溅射枪。 溅射枪包括目标和耦合到靶的表面的第一板。 第一磁体设置在第二磁体上。 耦合到第一磁体的表面的第二板和间隙限定在第二磁体的表面和第一板的表面之间。 流体入口和流体出口设置在第一磁体的表面上方。 限制杆联接到第二板,其中限制杆被配置为防止流体通过第二入口的第一入口的流动路径,除非流体穿过限定在第二磁体的表面与第二磁体的表面之间的间隙 第一盘。 包括溅射枪的替代配置。

    Substrate Carrier
    8.
    发明申请
    Substrate Carrier 审中-公开
    基板载体

    公开(公告)号:US20140166840A1

    公开(公告)日:2014-06-19

    申请号:US13716044

    申请日:2012-12-14

    IPC分类号: H01L21/687

    CPC分类号: H01L21/68728 H01L21/68757

    摘要: A substrate carrier is provided. The substrate carrier includes a base for supporting a substrate. A plurality of support tabs is affixed to a surface of the base. The plurality of support tabs have a cavity defined within an inner region of each support tab of the plurality of support tabs. A plurality of protrusions extends from the surface of the base, wherein one of the plurality of protrusions mates with one cavity to support one of the plurality of support tabs. A film is deposited over the surface of the base, surfaces of the plurality of support tabs and surfaces of the plurality of protrusions.

    摘要翻译: 提供衬底载体。 衬底载体包括用于支撑衬底的基底。 多个支撑片固定到基座的表面上。 多个支撑突片具有限定在多个支撑突片中的每个支撑突片的内部区域内的空腔。 多个突起从基座的表面延伸,其中多个突起中的一个与一个空腔配合,以支撑多个支撑突片中的一个。 薄膜沉积在基底的表面上,多个支撑突片的表面和多个突起的表面。