Coated article having low-E coating with IR reflecting layer(s) and high index nitrided dielectric film having multiple layers

    公开(公告)号:US10138159B2

    公开(公告)日:2018-11-27

    申请号:US15453944

    申请日:2017-03-09

    Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index dielectric multilayer film. The high index dielectric multilayer film may be of or include a first high index layer of or including ZrSiN and/or ZrSiAlN, and a second high index layer of or including titanium oxide (e.g., TiO2). The first high index layer of or including ZrSiN and/or ZrSiAlN may be amorphous or substantially amorphous, and the second high index layer of or including titanium oxide may be substantially crystalline in certain example embodiments. The low-E coating may be used in applications such as monolithic or insulating glass (IG) window units, vehicle windows, or the like.

    Low-E Panels and Methods of Forming the Same
    17.
    发明申请
    Low-E Panels and Methods of Forming the Same 审中-公开
    低E面板及其形成方法

    公开(公告)号:US20160122235A1

    公开(公告)日:2016-05-05

    申请号:US14531643

    申请日:2014-11-03

    Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A first dielectric layer is formed above the transparent substrate. The first dielectric layer includes zinc, tin, and aluminum. A first reflective layer is formed above the first dielectric layer. A second dielectric layer is formed above the first reflective layer. The second dielectric layer includes zinc, tin, and aluminum. A second reflective layer is formed above the second dielectric layer.

    Abstract translation: 本文提供的实施例描述了用于形成低e板的低e板和方法。 提供透明基板。 在透明基板的上方形成第一电介质层。 第一介电层包括锌,锡和铝。 第一反射层形成在第一介电层的上方。 在第一反射层上方形成第二电介质层。 第二电介质层包括锌,锡和铝。 第二反射层形成在第二介电层的上方。

    Silver based conductive layer for flexible electronics
    18.
    发明授权
    Silver based conductive layer for flexible electronics 有权
    用于柔性电子元件的银基导电层

    公开(公告)号:US09121100B2

    公开(公告)日:2015-09-01

    申请号:US13715477

    申请日:2012-12-14

    Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.

    Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物(例如氧化铟锡(ITO))之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的,例如在1.5至20nm之间,因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性,允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的,允许导电叠层具有改善的延展性。

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