Abstract:
A coated article includes a low emissivity (low-E) coating on a glass substrate. The low-E coating includes at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including NbBi. The high index layer (e.g., NBBiOx) is designed and deposited so as to be amorphous in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering. The high index layer may be a transparent dielectric high index layer.
Abstract:
A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and a plurality of high refractive index dielectric layers of or including a nitride of Zr and Al. In certain example embodiments, the high refractive index dielectric layers of or including a nitride of Zr and Al may be amorphous or substantially amorphous so as to allow the low-E coating to better withstand optional heat treatment (HT) such as thermal tempering. In certain example embodiments, the low-E coating may be used in applications such as monolithic or insulating glass (IG) window unit, vehicle windows, of the like.
Abstract:
A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including titanium oxide and at least one additional metal. A doped titanium oxide layer(s) is designed and deposited in a manner so as to be amorphous or substantially amorphous (as opposed to crystalline) in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering and reduce haze. The high index layer may be a transparent dielectric high index layer in preferred embodiments, which may be provided for antireflection purposes and/or color adjustment purposes, in addition to having thermal stability.
Abstract:
A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index dielectric multilayer film. The high index dielectric multilayer film may be of or include a first high index layer of or including ZrSiN and/or ZrSiAlN, and a second high index layer of or including titanium oxide (e.g., TiO2). The first high index layer of or including ZrSiN and/or ZrSiAlN may be amorphous or substantially amorphous, and the second high index layer of or including titanium oxide may be substantially crystalline in certain example embodiments. The low-E coating may be used in applications such as monolithic or insulating glass (IG) window units, vehicle windows, or the like.
Abstract:
Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material.
Abstract:
Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A first dielectric layer is formed above the transparent substrate. The first dielectric layer includes zinc, tin, and aluminum. A first reflective layer is formed above the first dielectric layer. A second dielectric layer is formed above the first reflective layer. The second dielectric layer includes zinc, tin, and aluminum. A second reflective layer is formed above the second dielectric layer.
Abstract:
Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.
Abstract:
A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).
Abstract:
Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.