公开(公告)号：US20030116850A1

公开(公告)日：2003-06-26

申请号：US10026146

申请日：2001-12-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard P. Volant ,  Seshadri Subbanna ,  Robert A. Groves ,  John C. Malinowski ,  Kenneth J. Stein ,  Kevin S. Petrarca

IPC: H01L023/48

CPC classification number: H01L23/66 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A passive electrical device includes a first electrical conductor, a second electrical conductor disposed over the first conductor; and a third electrical conductor connecting the first conductor to the second conductor. The said first, second and third conductors are disposed on a semiconductor substrate. The sheet resistivity of the first conductor is approximately equal to the sheet resistivity of the second conductor.

Abstract translation: 无源电气装置包括第一电导体，布置在第一导体上的第二电导体; 以及将第一导体连接到第二导体的第三电导体。 所述第一，第二和第三导体设置在半导体衬底上。 第一导体的薄层电阻率近似等于第二导体的薄层电阻率。

公开(公告)号：US20030003746A1

公开(公告)日：2003-01-02

申请号：US09893266

申请日：2001-06-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Keith R. Pope ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

IPC: H01L021/302

CPC classification number: H01L21/7684 ,  H01L21/02063

Abstract: A process of providing a semiconductor device with electrical interconnection capability wherein a sacrificial material is introduced into topographical features of the semiconductor device prior to chemical mechanical polishing so that debris formed during chemical mechanical polishing is incapable of falling into topographical features present on the semiconductor device. The sacrificial material is thereupon removed by liquid or supercritical carbon dioxide.

Abstract translation: 提供具有电互连能力的半导体器件的过程，其中在化学机械抛光之前将牺牲材料引入半导体器件的形貌特征中，使得在化学机械抛光期间形成的碎屑不能落入存在于半导体器件上的形貌特征。 牺牲材料随后被液体或超临界二氧化碳除去。

公开(公告)号：US20040113278A1

公开(公告)日：2004-06-17

申请号：US10319032

申请日：2002-12-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

IPC: H01L023/48

CPC classification number: H01L21/76808 ,  H01L21/76801 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

公开(公告)号：US20030132191A1

公开(公告)日：2003-07-17

申请号：US10053314

申请日：2002-01-17

Applicant: International Business Machines Corporation

Inventor： Mahadevaiyer Krishnan ,  Mark E. Lagus ,  Kevin S. Petrarca ,  James G. Ryan ,  Richard P. Volant

IPC: C23F001/00

CPC classification number: G01Q70/16

Abstract: A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.

公开(公告)号：US20030098618A1

公开(公告)日：2003-05-29

申请号：US09996148

申请日：2001-11-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David R. Greenberg ,  Hariklia Deligianni ,  Robert A. Groves ,  Christopher V. Jahnes ,  Jennifer L. Lund ,  Katherine L. Saenger ,  Richard P. Volant

IPC: H02H001/00

CPC classification number: B81B3/0016 ,  B81C2201/112 ,  H01H1/24 ,  H01H59/0009 ,  H01H2001/0089 ,  Y10T307/826 ,  Y10T307/911 ,  Y10T307/937

Abstract: A micro-electro mechanical switch having a restoring force sufficiently large to overcome stiction is described. The switch is provided with a deflectable conductive beam and multiple electrodes coated with an elastically deformable conductive layer. A restoring force which is initially generated by a single spring constant k0 upon the application of a control voltage between the deflectable beam and a control electrode coplanar to the contact electrodes is supplemented by adding to k0 additional spring constants k1, . . . , kn provided by the deformable layers, once the switch nears closure and the layers compress. In another embodiment, deformable, spring-like elements are used in lieu of the deformable layers. In an additional embodiment, the compressible layers or deformable spring-like elements are affixed to the deflecting beam facing the switch electrodes

Abstract translation: 描述了具有足够大以克服静止的恢复力的微电机械开关。 开关设置有可偏转的导电束和涂覆有可弹性变形的导电层的多个电极。 在施加可调光束和与接触电极共面的控制电极之间的控制电压时，最初由单个弹簧常数k0产生的恢复力通过增加k0个额外的弹簧常数k1来补充。 。 。 由可变形层提供的，一旦开关接近闭合并且层压缩。 在另一个实施例中，使用可变形的弹簧状元件代替可变形层。 在另外的实施例中，可压缩层或可变形的弹簧状元件固定到面向开关电极的偏转梁

公开(公告)号：US20030080393A1

公开(公告)日：2003-05-01

申请号：US10002447

申请日：2001-10-26

Applicant: International Business Machines Corporation

Inventor： Timothy J. Dalton ,  Kevin S. Petrarca ,  Richard P. Volant

IPC: H01L029/00

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A laser-programmable fuse structure for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the fuse structure includes a conductive layer, the conductive layer completing a conductive path between wiring segments in a wiring layer. An organic material is encapsulated underneath the conductive layer, wherein the fuse structure is blown open by application of a beam of laser energy thereto.

Abstract translation: 公开了一种用于集成电路器件的激光可编程熔丝结构。 在本发明的示例性实施例中，熔丝结构包括导电层，导电层在布线层中的布线段之间完成导电路径。 有机材料被封装在导电层下面，其中通过向其施加激光能量而将熔丝结构吹开。